the National Natural Science Foundation of China(62205235;U21A20496;62174117);Fund Program for the Scientific Activities of Selected Returned Overseas Professionals in Shanxi Province(20230011);Research Program Supported by Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD020);the Central Government Guides Local Funds for Scientific and Technological Development(YDZJSX20231A010);State Key Laboratory Program of Quantum Optics and Quantum Optics Devices(KF202306)
LI Yaojiang,SHI Linlin,SUN Xinyu,et al.Highly Sensitive Broad Organic Photodetector Based on Alumina Interface Modification Layer[J].Chinese Journal of Luminescence,2025,46(10):1930-1939.
2D h-BN Nanosheets as an Efficient Electron Blocking Layer for Enhanced Performance of Quantum Dot Light-emitting Diodes
Deep UV Detection: from Single-crystalline MgZnO to Amorphous Ga2O3
Inkjet Printed Perovskite Quantum Dot Light-emitting Diodes Based on Multifunctional Phenethylammonium Bromide Modification Layer
Inorganic Nanoparticles and Interface Layer Synergistically Improve Performance of Near-infrared Organic Photomultiplication Photodetector
Related Author
LI Yaojiang
SHI Linlin
SUN Xinyu
SHANG Ziheng
LI Guohui
JI Ting
CUI Yanxia
WANG Ning
Related Institution
College of Physics and Optoelectronics, Shanxi Key Lab of Photovoltaic Technology and Application, Key Lab of New Sensors and Intelligent Control of Ministry of Education, Taiyuan University of Technology
Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University
Institute of Physics, Chinese Academy of Sciences
Songshan Lake Materials Laboratory
College of Physics and Information Engineering, Fuzhou University