Epitaxial growth of hexagonal boron nitride and device application
|更新时间:2025-06-07
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Epitaxial growth of hexagonal boron nitride and device application
增强出版
“The research progress of hexagonal boron nitride materials was systematically introduced by experts, including their structural properties and preparation methods, providing new directions for applications in fields such as optoelectronics.”
Chinese Journal of LuminescencePages: 1-21(2025)
作者机构:
1.中国科学院半导体研究所 宽禁带半导体研发中心,北京 100083
2.中国科学院大学,材料科学与光电技术学院,北京 100049
作者简介:
基金信息:
National Key R&D Program of China(2022YFB3605003);National Natural Science Foundation of China(52192614;62175228)