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1060 nm high-brightness HiBBEE tapered semiconductor laser
更新时间：2025-04-02

    • 1060 nm high-brightness HiBBEE tapered semiconductor laser

    • “In the field of LiDAR, a cone-shaped semiconductor laser using HiBBEE epitaxial chips achieves high brightness and low divergence angle output, with a brightness of 25 MWCm-2sr-1 and a vertical divergence angle reduced to 8.0 °.”
    • Chinese Journal of Luminescence   Pages: 1-7(2025)

    • DOI：10.37188/CJL.20250056    

      CLC：
    • CSTR：32170.14.CJL.20250056    

    • Received：2025，

      Revised：2025，

      Published Online：02 April 2025，

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  • LIU Xiang,WU Chengkun,XUE Xiaoe,et al.1060 nm high-brightness HiBBEE tapered semiconductor laser[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20250056 CSTR： 32170.14.CJL.20250056.

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