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Simulation on Nitrogen-polar InGaN-based Red Light-emitting Diodes with Compositionally Graded Quantum Barrier Layer
Device Fabrication and Physics | 更新时间：2024-12-20
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    • Simulation on Nitrogen-polar InGaN-based Red Light-emitting Diodes with Compositionally Graded Quantum Barrier Layer

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    • “In the field of Micro LED display, researchers have utilized polarization engineering to construct nitrogen polar InGaN based red LEDs with gradually graded InGaN as the final quantum barrier layer, effectively improving the luminescence performance and providing new ideas for efficient InGaN based red LED structure design and device preparation.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 12, Pages: 2037-2044(2024)

    • DOI：10.37188/CJL.20240299    

      CLC： TN312.8

    • Published：25 December 2024，

      Received：14 November 2024，

      Revised：21 November 2024，

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  • JI Zeting,DENG Gaoqiang,WANG Yusen,et al.Simulation on Nitrogen-polar InGaN-based Red Light-emitting Diodes with Compositionally Graded Quantum Barrier Layer[J].Chinese Journal of Luminescence,2024,45(12):2037-2044. DOI： 10.37188/CJL.20240299.

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Related Author

ZHANG Yuantao
ZHANG Baolin
GAO Haozhe
ZUO Changcai
JI Zeting
DENG Gaoqiang
WANG Yusen
YU Jiaqi

Related Institution

State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices， Ministry of Education， Fujian Key Laboratory of Semiconductor Materials and Applications， CI Center for OSED， Department of Physics， Xiamen University
Tan Kah Kee Innovation Laboratory， Future Display Institue of Xiamen
Research Center for Wide Gap Semiconductor, School of Physics, Peking University
Anhui Key Laboratory of Detection Technology and Energy Saving Devices, Anhui Polytechnic University
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