您当前的位置:
首页 >
文章列表页 >
Negative photoconductivity in ZnO devices
更新时间:2024-12-17
    • Negative photoconductivity in ZnO devices

      增强出版
    • Report: Progress has been made in the study of negative photoconductivity characteristics of zinc oxide, providing new ideas for the construction of high-performance ultraviolet photodetectors.
    • Chinese Journal of Luminescence   Pages: 1-14(2024)
    • DOI:10.37188/CJL.20240270    

      CLC: O482.31
    • CSTR:32170.14.CJL.20240270    
    • Published Online:17 December 2024

    移动端阅览

  • ZHANG QINGYI, YANG YUXIN, LIU KAI, et al. Negative photoconductivity in ZnO devices. [J/OL]. Chinese journal of luminescence, 2024, 1-14. DOI: 10.37188/CJL.20240270. CSTR: 32170.14.CJL.20240270.

  •  
  •  

0

Views

27

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Negative Photoconductivity and Its Applications in Optoelectronic Devices
Bias Stress Stability of Electric-double-layer ZnO Thin-film Transistor
High-performance Ultraviolet Inorganic-organic Composite Structure Photodetectors Based on Electric Field Control
High Mobility ZnO Thin-film Transistor Fabricated by Sputtering at Room Temperature
Competition in Nonlinear Optical Properties of Cu-doped ZnO Nanorods

Related Author

LIU Kai
ZHANG Qingyi
LIAO Yanan
LIU Wei
Cong WANG
Yu-rong LIU
Qiang PENG
He HUANG

Related Institution

College of Opto-Mechanical Engineering, Zhejiang A&F University
School of Ocean, Shanwei Institute of Technology
Novel Energy Materials & Catalysis Research Center, Shanwei Marine Industry Institute
School of Microelectronics, South China University of Technology
College of Physics & Electronics Information Engineering, Minjiang University
0