Research progress on rare earth doped metal oxide thin film transistors
|更新时间:2024-12-12
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Research progress on rare earth doped metal oxide thin film transistors
增强出版
“In the field of large-sized light-emitting display driver backplate applications, MOTFTs designed with rare earth doped oxide materials exhibit high mobility and stability, and are expected to achieve high-end display applications.”
Chinese Journal of LuminescencePages: 1-16(2024)
作者机构:
华南理工大学 发光材料与器件国家重点实验室,广东 广州 510641
作者简介:
基金信息:
National Key Research and Development Program(2021YFB3600800);National Natural Science Foundation of China(62074059)
HUANG XIANGLAN, PENG JUNBIAO. Research progress on rare earth doped metal oxide thin film transistors. [J/OL]. Chinese journal of luminescence, 2024, 1-16.
DOI:
HUANG XIANGLAN, PENG JUNBIAO. Research progress on rare earth doped metal oxide thin film transistors. [J/OL]. Chinese journal of luminescence, 2024, 1-16. DOI: 10.37188/CJL.20240268.
Research progress on rare earth doped metal oxide thin film transistors增强出版