您当前的位置：
首页 >
文章列表页 >
Impact of Oxygen Vacancy on the Performance of Amorphous InGaZnO based Schottky Barrier Diode
更新时间：2025-01-03
|

    • Impact of Oxygen Vacancy on the Performance of Amorphous InGaZnO based Schottky Barrier Diode

      增强出版
    • “In the field of energy harvesting microsystems, rectifying circuit technology has made significant progress. Expert xx optimized the performance of rectifying diodes by modulating the oxygen vacancy concentration within InGaZnO films, laying a foundation for the construction of energy conversion and management systems.”
    • Chinese Journal of Luminescence   Pages: 1-9(2025)

    • DOI：10.37188/CJL.20240265    

      CLC： Document
    • CSTR：32170. 14. CJL. 20240265    

    • Published Online：03 January 2025，

    移动端阅览

  • JIA Bin,TONG Xiaowen,HAN Zikang,et al.Impact of Oxygen Vacancy on the Performance of Amorphous InGaZnO based Schottky Barrier Diode[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20240265 CSTR： 32170. 14. CJL. 20240265.

  •  
  •  

0

Views

2

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Effect of N2O Plasma Treatment on The SiNx-based InGaZnO Thin Film Transistors

Related Author

LI Jun
ZHOU Fan
LIN Hua-ping
ZHANG Hao
ZHANG Jian-hua
JIANG Xue-yin
ZHANG Zhi-lin

Related Institution

School of Materials Science and Engineering, Shanghai University
Key Laboratory of Advanced Display and System Application, EMC, Shanghai University
0