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Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence
Synthesis and Properties of Materials | 更新时间：2024-12-20
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    • Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence

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    • “The latest research reveals that GaAs insertion layer can optimize the surface roughness and crystal quality of InGaAs multi quantum well materials, enhance the luminescence effect, and provide new directions for research in related fields.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 12, Pages: 2011-2020(2024)

    • DOI：10.37188/CJL.20240243    

      CLC： O482.31

    • Published：25 December 2024，

      Received：30 September 2024，

      Revised：17 October 2024，

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  • GAN Lulu,WANG Haizhu,ZHANG Chong,et al.Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence[J].Chinese Journal of Luminescence,2024,45(12):2011-2020. DOI： 10.37188/CJL.20240243.

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Related Author

MA Xiaohui
WANG Dengkui
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Hai-zhu WANG
Xu WANG

Related Institution

State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology
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Changchun Institute of Physics, Chinese Academy of Sciences
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