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Energy Transfer and Photoluminescence Enhancement in WS2/hBN/MoS2 Heterostructures
Device Fabrication and Physics | 更新时间：2024-12-20
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    • Energy Transfer and Photoluminescence Enhancement in WS2/hBN/MoS2 Heterostructures

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    • “In the field of 2D transition metal dichalcogenides, researchers have reported a photoluminescence enhancement effect of 1L WS2 at room temperature when constructing it into 1L-WS2/hBN/1L-MoS2 vertical heterostructures. The photoluminescence enhancement factors can be up to 4.2, which provides a feasible way to optimize the performance of TMD-based optoelectronic devices.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 12, Pages: 2021-2029(2024)

    • DOI：10.37188/CJL.20240238    

      CLC： O482.31

    • Published：25 December 2024，

      Received：29 September 2024，

      Revised：14 October 2024，

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  • CHEN Pengyao,REN Bingyan,ZHANG Chengyu,et al.Energy Transfer and Photoluminescence Enhancement in WS2/hBN/MoS2 Heterostructures[J].Chinese Journal of Luminescence,2024,45(12):2021-2029. DOI： 10.37188/CJL.20240238.

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