Modeling and Simulation of Ga2O3/VO2 Heterojunction Devices Based on VO2 Phase Transition Regulation
Device Fabrication and Physics|更新时间:2024-11-28
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Modeling and Simulation of Ga2O3/VO2 Heterojunction Devices Based on VO2 Phase Transition Regulation
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“The latest research utilized COMSOL multiphysics software to conduct two-dimensional physical simulations of Ga2O3/VO2 based heterojunction optoelectronic devices, exploring their applications in photodetectors and contributing to further optimization of experimental research and applications of Ga2O3/VO2 photodiodes.”
Chinese Journal of LuminescenceVol. 45, Issue 11, Pages: 1883-1888(2024)
作者机构:
1.国防科技大学电子对抗学院 红外与低温等离子体安徽省重点实验室, 安徽 合肥 230037
2.国防科技大学电子对抗学院 脉冲功率激光技术国家重点实验室, 安徽 合肥 230037
3.国防科技大学电子对抗学院 先进激光技术安徽省实验室, 安徽 合肥 230037
作者简介:
基金信息:
State Key Laboratory of Pulsed of Power Laser Technology(SKL2022ZR05);Scientific research program of National University of Defense Technology(ZK22-26);Natural Science Foundation of Anhui Province(1908085MA13)
FENG Yunsong,ZHOU Changqi,WANG Siyu,et al.Modeling and Simulation of Ga2O3/VO2 Heterojunction Devices Based on VO2 Phase Transition Regulation[J].Chinese Journal of Luminescence,2024,45(11):1883-1888.
FENG Yunsong,ZHOU Changqi,WANG Siyu,et al.Modeling and Simulation of Ga2O3/VO2 Heterojunction Devices Based on VO2 Phase Transition Regulation[J].Chinese Journal of Luminescence,2024,45(11):1883-1888. DOI: 10.37188/CJL.20240211.
Modeling and Simulation of Ga2O3/VO2 Heterojunction Devices Based on VO2 Phase Transition Regulation增强出版