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Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs
Device Fabrication and Physics | 更新时间：2026-09-12

    • Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs

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    • Chinese Journal of Luminescence   Vol. 45, Issue 9, Pages: 1539-1546(2024)

    • DOI：10.37188/CJL.20240164    

      CLC： TN312+.8

    • Received：02 July 2024，

      Revised：2024-07-17，

      Published：25 September 2024

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  • WANG Wei,ZHANG Tengfei,WANG Shouyu.Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs[J].Chinese Journal of Luminescence,2024,45(09):1539-1546. DOI： 10.37188/CJL.20240164.

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