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Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs.
更新时间:2024-08-16
    • Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs.

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    • 在GaN基蓝光Micro-LED芯片领域,通过温度和电压实验方法,揭示了其反向漏电流失效机理。研究结果表明,温度应力下,Micro-LED芯片退化前的反向漏电流主要由多步热辅助隧穿电流构成,受Poole-Frenkel隧穿机制影响。而电压应力退化后,反向漏电流随应力时间增加而增大,由多步热辅助隧穿电流转换为空间电荷限制电流机制。分析退化前后的能带图发现,长时间电压应力会导致击穿现象,引起内部电场剧烈变化,电子高能量碰撞晶格原子,产生大量载流子,增加非辐射复合率,使反向漏电流显著增大。这一发现为Micro-LED芯片的可靠性研究提供了重要依据。
    • Chinese Journal of Luminescence   Pages: 1-8(2024)
    • DOI:10.37188/CJL.20240164    

      CLC: TN312+.8
    • Published Online:16 August 2024

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  • WangWei ,ZhangTengfei ,WangShouYu .Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs.[J].Chinese Journal of Luminescence, DOI:10.37188/CJL.20240164

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