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Highly Sensitive Photodetectors Based on WS2 Quantum Dots/GaAs Heterostructures
Device Fabrication and Physics | 更新时间：2024-10-31
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    • Highly Sensitive Photodetectors Based on WS2 Quantum Dots/GaAs Heterostructures

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    • “In the field of photodetectors, researchers have made significant progress. They combined 3D GaAs nanowires with 0D WS2 quantum dots to form a heterogeneous structure, which provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs nanowires.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 10, Pages: 1699-1706(2024)

    • DOI：10.37188/CJL.20240162    

      CLC： TN304

    • Published：26 October 2024，

      Received：29 June 2024，

      Revised：15 July 2024，

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  • LI Xianshuai,LIN Fengyuan,HOU Xiaobing,et al.Highly Sensitive Photodetectors Based on WS2 Quantum Dots/GaAs Heterostructures[J].Chinese Journal of Luminescence,2024,45(10):1699-1706. DOI： 10.37188/CJL.20240162.

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LI Xianshuai
LIN Fengyuan
HOU Xiaobing
LI Kexue
LIAO Lei
HAO Qun
WEI Zhipeng

Related Institution

State Key Laboratory of High Power Semiconductor Lasers， College of Physics， Changchun；University of Science and Technology
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