Chinese Journal of LuminescenceVol. 45, Issue 6, Pages: 986-995(2024)
作者机构:
1.太原理工大学 电子信息与光学工程学院, 山西 太原 030024
2.太原理工大学 新材料界面科学与工程教育部重点实验室, 山西 太原 030024
3.太原理工大学 物理学院, 山西 太原 030024
作者简介:
基金信息:
the National Natural Science Foundation of China(62205235;U21A20496;62174117);the Key Research and Development Program of Shanxi Province(202102150101007);Natural Science Foundation of Shanxi Province(20210302123154;20210302123169);Research Program Supported by Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2021SX-FR008;2022SX-TD020);the Central Government Guides Local Funds for Scientific and Technological Development(YDZJSX20231A010;YDZJSX2021A012);Introduction of Talents Special Project of Lvliang City(Rc2020206;Rc2020207)
Inkjet Printed Perovskite Quantum Dot Light-emitting Diodes Based on Multifunctional Phenethylammonium Bromide Modification Layer
Regulating Near-infrared Luminescence of ZnGa2O4∶Cr3+via F/O Anion Substitution
PCE10 Significantly Improves Red and Near-infrared Light Detection Capabilities of Ternary Photomultiplication-type Organic Photodetectors
Luminescence Properties of Ce3+-Cr3+ Co-doped Ba3Sc4O9 Phosphors
Related Author
CHANG Mingru
SHI Linlin
HUA Yulu
JI Ting
LI Guohui
XU Bingshe
DONG Hailiang
CUI Yanxia
Related Institution
College of Electronic Information and Optical Engineering, Key Laboratory of Interface Science and Engineering in Advanced Materials, College of Physics, Taiyuan University of Technology
College of Physics and Information Engineering, Fuzhou University
School of Material Science and Engineering, Southeast University
College of Physics & Electronics Information Engineering, Minjiang University
College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications