Theoretical Study on Effect of Interfacial Properties on Optical Properties of InAs/GaSb Type Ⅱ Superlattices
Theoretical Calculation and Spectral Analysis|更新时间:2024-09-25
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Theoretical Study on Effect of Interfacial Properties on Optical Properties of InAs/GaSb Type Ⅱ Superlattices
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“The latest research reveals the application of InAs/GaSb superlattice in mid infrared optoelectronic devices, which provides theoretical support for device design by regulating interface states to affect electronic energy states.”
Chinese Journal of LuminescenceVol. 45, Issue 5, Pages: 817-823(2024)
作者机构:
1.中国科学院半导体研究所 固态光电信息技术实验室, 北京 100083
2.中国科学院大学 材料科学与光电技术学院, 北京 100049
作者简介:
基金信息:
the National Natural Science Foundation of China(12393832;62327813;62235019;62235016;61991431)
MA Zejun,LI Yuan,ZHU Shenbo,et al.Theoretical Study on Effect of Interfacial Properties on Optical Properties of InAs/GaSb Type Ⅱ Superlattices[J].Chinese Journal of Luminescence,2024,45(05):817-823.
MA Zejun,LI Yuan,ZHU Shenbo,et al.Theoretical Study on Effect of Interfacial Properties on Optical Properties of InAs/GaSb Type Ⅱ Superlattices[J].Chinese Journal of Luminescence,2024,45(05):817-823. DOI: 10.37188/CJL.20240054.
Theoretical Study on Effect of Interfacial Properties on Optical Properties of InAs/GaSb Type Ⅱ Superlattices增强出版
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Related Institution
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