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High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining
Device Fabrication and Physics | 更新时间：2024-04-08
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    • High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining

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    • Chinese Journal of Luminescence   Vol. 45, Issue 3, Pages: 500-505(2024)

    • DOI：10.37188/CJL.20240033    

      CLC： TN248.4

    • Published：05 March 2024，

      Received：03 February 2024，

      Revised：24 February 2024，

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  • ZHAO Yufei,TONG Cunzhu,WEI Zhipeng.High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining[J].Chinese Journal of Luminescence,2024,45(03):500-505. DOI： 10.37188/CJL.20240033.

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Related Author

ZHAO Yufei
TONG cunzhu
WEI Zhipeng
SU Peng
GAO Xin
ZHANG Yue
ZHAO Renze
FU Dingyang

Related Institution

State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
Key Laboratory of High Power Semiconductor Lasers， School of Physics， Changchun University of Science and Technology
State Key Laboratory of High Power Semiconductor Lasers， School of Physics， Changchun University of Science and Technology
State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences
School of Optoelectronic Engineering, Changchun University of Science and Technology
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