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High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining
Device Fabrication and Physics | 更新时间：2026-09-12

    • High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining

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    • Chinese Journal of Luminescence   Vol. 45, Issue 3, Pages: 500-505(2024)

    • DOI：10.37188/CJL.20240033    

      CLC： TN248.4

    • Received：03 February 2024，

      Revised：2024-02-24，

      Published：05 March 2024

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  • ZHAO Yufei,TONG Cunzhu,WEI Zhipeng.High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining[J].Chinese Journal of Luminescence,2024,45(03):500-505. DOI： 10.37188/CJL.20240033.

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Related Author

ZHAO Yufei
TONG cunzhu
WEI Zhipeng
MENG Qingkai
ZHANG Jiachen
WU Shunhua
ZHANG Junyue
LIU Jiachen

Related Institution

Key Laboratory of High Power Semiconductor Lasers， School of Physics， Changchun University of Science and Technology
State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
University of Chinese Academy of Sciences
State Key Laboratory of Ultrafast Optical Science and Technology， Xi’an Institute of Optics and Precision Mechanics， Chinese Academy of Sciences
State Key Laboratory of Luminescence Science and Technology， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
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