您当前的位置：
首页 >
文章列表页 >
MOCVD Epitaxial Growth and Characterization of Polar, Semipolar and Nonpolar InN Thin Films
Research Letter | 更新时间：2024-03-04
|

    • MOCVD Epitaxial Growth and Characterization of Polar, Semipolar and Nonpolar InN Thin Films

      增强出版
    • Chinese Journal of Luminescence   Vol. 45, Issue 2, Pages: 204-210(2024)

    • DOI：10.37188/CJL.20230303    

      CLC： O482.31

    • Published：05 February 2024，

      Received：29 November 2023，

      Revised：17 December 2023，

    移动端阅览

  • ZHAO Jianguo,YIN Rui,XU Ru,et al.MOCVD Epitaxial Growth and Characterization of Polar, Semipolar and Nonpolar InN Thin Films[J].Chinese Journal of Luminescence,2024,45(02):204-210. DOI： 10.37188/CJL.20230303.

  •  
  •  

0

Views

314

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Synthesis and Characterization of HgTe/CdS/ZnS Multi-shell Quantum Dots
In-situ Monitoring and Determination of AlGaAs Composition During MOCVD Growth
In-situ Monitoring of AlGaAs Growth by Reflectance Anisotropy Spectroscopy in MOCVD
Synthesis and Characterization of the CdSe/ZnSe/ZnS Multishell Quantum Dots

Related Author

CHANG Jianhua
LIU Bin
ZHAO Jianguo
HU Jun
QIN Rui-fei
JIN Chong-jun
WANG Peng-cheng
XU Hua-wei

Related Institution

School of Physics and Engineering,Sun Yat-sen University
State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
Graduate University of Chinese Academy of Sciences
State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
Graduate University of the Chinese Academy of Sciences
0