您当前的位置：
首页 >
文章列表页 >
Experimental Study of Emission Scaling Factor Based on InGaAs/GaAs Quantum Well Structure
Device Fabrication and Physics | 更新时间：2024-01-05
|

    • Experimental Study of Emission Scaling Factor Based on InGaAs/GaAs Quantum Well Structure

      增强出版
    • Chinese Journal of Luminescence   Vol. 44, Issue 12, Pages: 2258-2264(2023)

    • DOI：10.37188/CJL.20230249    

      CLC： O482.31

    • Published：05 December 2023，

      Received：22 October 2023，

      Revised：08 November 2023，

    扫 描 看 全 文

  • WANG Wei,YANG Shuting,WANG Yaxin,et al.Experimental Study of Emission Scaling Factor Based on InGaAs/GaAs Quantum Well Structure[J].Chinese Journal of Luminescence,2023,44(12):2258-2264. DOI： 10.37188/CJL.20230249.

  •  
  •  

0

Views

122

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells
Correlation of the Yellow Photoluminescence and Excitation Sources of GaN Film Grown by MOVPE
Effect of the Temperature on Absorption and Photoluminescence Spectra of CdSe/ZnS Quantum Dots
Luminescence and Time-Resolved Fluorescence Decay of Mn2+-activated Zn2GeO4 Phosphors under Ultraviolet Excitation

Related Author

YU Qingnan
WANG Wei
YE Zhi-cheng
SHU Yong-chun
CAO Xue
GONG Liang
YAO Jiang-hong
PI Biao

Related Institution

The Key Laboratory of Weak-light Nonlinear Photonics, Ministry of Education, Nankai University
重庆师范大学 物理学与信息技术学院
重庆市高校光学工程重点实验室
Department of Applied Physics, Zhejiang University of Technology
Department of Applied Chemistry, Taiwan Chiao Tung University, Hsinchu
0