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Optical Properties of InP/GaP/ZnS Quantum Dots Processed with Hydrofluoric Acid and Their Application in Light Emitting Diodes
Synthesis and Properties of Materials | 更新时间：2023-11-23
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    • Optical Properties of InP/GaP/ZnS Quantum Dots Processed with Hydrofluoric Acid and Their Application in Light Emitting Diodes

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    • Chinese Journal of Luminescence   Vol. 45, Issue 1, Pages: 69-77(2024)

    • DOI：10.37188/CJL.20230243    

      CLC： O482.31;TN312.8

    • Published：05 January 2024，

      Received：16 October 2023，

      Revised：30 October 2023，

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  • CHEN Xiaoli,CHEN Peili,LU Si,et al.Optical Properties of InP/GaP/ZnS Quantum Dots Processed with Hydrofluoric Acid and Their Application in Light Emitting Diodes[J].Chinese Journal of Luminescence,2024,45(01):69-77. DOI： 10.37188/CJL.20230243.

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Related Author

CHEN Xiao-li
CHEN Pei-li
LU Si
XU Xue-qing
SU Qiu-cheng
ZHU Yan-qing
FANG Wenhui
ZHANG Lingjiao

Related Institution

Guangzhou Institute of Energy Conversion， Chinese Academy of Sciences
School of Electronics and Information Engineering， Sun Yat-sen University
School of Microelectronics， South China University of Technology
College of Electronic Engineering and Intelligence， Dongguan Institute of Technology
South China Academy of Advanced Optoelectronics， South China Normal University
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