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Optical Properties of InP/GaP/ZnS Quantum Dots Processed with Hydrofluoric Acid and Their Application in Light Emitting Diodes
Synthesis and Properties of Materials | 更新时间：2024-07-10
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    • Optical Properties of InP/GaP/ZnS Quantum Dots Processed with Hydrofluoric Acid and Their Application in Light Emitting Diodes

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    • “最新研究揭示，采用氢氟酸原位注入法制备的InP/GaP/ZnS量子点，通过HF刻蚀显著提升其光学性能，实现高达96%的光致发光量子产率，为发光二极管领域带来突破性进展。”
      ”
    • Chinese Journal of Luminescence   Vol. 45, Issue 1, Pages: 69-77(2024)

    • DOI：10.37188/CJL.20230243    

      CLC： O482.31;TN312.8

    • Published：05 January 2024，

      Received：16 October 2023，

      Revised：30 October 2023，

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  • CHEN Xiaoli,CHEN Peili,LU Si,et al.Optical Properties of InP/GaP/ZnS Quantum Dots Processed with Hydrofluoric Acid and Their Application in Light Emitting Diodes[J].Chinese Journal of Luminescence,2024,45(01):69-77. DOI： 10.37188/CJL.20230243.

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