您当前的位置:
首页 >
文章列表页 >
Photoelectric Characteristics of AC-driven Non-electrical Contact GaN-based Micro-LED Device
Device Fabrication and Physics | 更新时间:2024-01-05
    • Photoelectric Characteristics of AC-driven Non-electrical Contact GaN-based Micro-LED Device

      增强出版
    • Chinese Journal of Luminescence   Vol. 44, Issue 12, Pages: 2242-2249(2023)
    • DOI:10.37188/CJL.20230234    

      CLC: TN303;TN304.2
    • Published:05 December 2023

      Received:09 October 2023

      Revised:24 October 2023

    扫 描 看 全 文

  • GUO Yunyun,WENG Shuchen,ZOU Zhenyou,et al.Photoelectric Characteristics of AC-driven Non-electrical Contact GaN-based Micro-LED Device[J].Chinese Journal of Luminescence,2023,44(12):2242-2249. DOI: 10.37188/CJL.20230234.

  •  
  •  

0

Views

307

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Photoelectric Characteristics of Non-electric Contact GaN-based Micro-LED Device
Ultrafast Laser Lift-off of Semipolar GaN-based LEDs on Sapphire Substrates
InGaN-based Lateral-structured Micro-LED Array Fabricated by Ion Implantation

Related Author

XU Hai-long
CHEN Kong-jie
CHEN Pei-qi
ZHOU Xiong-tu
GUO Tai-liang
WU Chao-xing
ZHANG Yong-ai
GUO Yunyun

Related Institution

Department of Optoelectronic Information Science and Engineering , School of Mechanical Engineering, Jiangsu University, Zhengjiang
Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China
Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-technology and Nano-bionics, Chinese Academy of Sciences
Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology
0