您当前的位置:
首页 >
文章列表页 >
Design and Simulation of Metalens for Enhanced Responsivity of Avalanche Photodetectors
更新时间:2023-11-14
    • Design and Simulation of Metalens for Enhanced Responsivity of Avalanche Photodetectors

      增强出版
    • Chinese Journal of Luminescence   Pages: 1-8(2023)
    • DOI:10.37188/CJL.20230221    

      CLC:

    扫 描 看 全 文

  • CHU Guanghui,YANG Guohao,LIU Tianhong,et al.Design and Simulation of Metalens for Enhanced Responsivity of Avalanche Photodetectors[J].Chinese Journal of Luminescence, DOI:10.37188/CJL.20230221

  •  

0

Views

4

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Temperature-dependent Carrier Leakage in InGaN/GaN Multiple Quantum Wells Light-emitting Diodes
Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors
Synthesis and Down-conversion Luminescence of Er3+,Yb3+ Codoped NaYF4 Phosphors
The Difference of Luminous Performance Between Traditional Phosphor Packaging LED and Remote Phosphor LED
Synthesis and Near-infrared Quantum Cutting of Tb3+, Yb3+ Codoped BaGd2ZnO5 Phosphors

Related Author

No data

Related Institution

College of Photovoltaic, Nanchang University
National Engineering Research Center on Si Substrate, Nanchang University
College of Material Science and Engineering, Nanchang University
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences
Department of Physics, China Agriculture University
0