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Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells
Synthesis and Properties of Materials | 更新时间:2023-11-27
    • Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells

    • Chinese Journal of Luminescence   Vol. 44, Issue 11, Pages: 1967-1973(2023)
    • DOI:10.37188/CJL.20230202    

      CLC: TN304.2
    • Published:05 November 2023

      Received:06 September 2023

      Revised:21 September 2023

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  • YU Haixin,WANG Haizhu,LANG Tianyu,et al.Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells[J].Chinese Journal of Luminescence,2023,44(11):1967-1973. DOI: 10.37188/CJL.20230202.

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