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1.长春理工大学 重庆研究院, 重庆 401135
2.长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022
Published:05 November 2023,
Received:06 September 2023,
Revised:21 September 2023,
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于海鑫,王海珠,郎天宇等.GaAs插入层对InGaAs/AlGaAs量子阱发光性质的影响[J].发光学报,2023,44(11):1967-1973.
YU Haixin,WANG Haizhu,LANG Tianyu,et al.Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells[J].Chinese Journal of Luminescence,2023,44(11):1967-1973.
于海鑫,王海珠,郎天宇等.GaAs插入层对InGaAs/AlGaAs量子阱发光性质的影响[J].发光学报,2023,44(11):1967-1973. DOI: 10.37188/CJL.20230202.
YU Haixin,WANG Haizhu,LANG Tianyu,et al.Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells[J].Chinese Journal of Luminescence,2023,44(11):1967-1973. DOI: 10.37188/CJL.20230202.
InGaAs/AlGaAs多量子阱(MQWs)作为一种常见的Ⅲ⁃Ⅴ族外延材料,通常应用于半导体激光器和太阳能电池等领域。然而,由于量子阱的势阱层和势垒层生长温度不同,铟原子的偏析和多量子阱生长质量较差等问题尚未得到很好的解决。本文设计了一种砷化镓(GaAs)材料作为插入层(ISL),并用于InGaAs/AlGaAs MQWs的结构。PL、XRD、AFM测试表明,GaAs插入层保证了MQWs结构中更多的辐射复合,阻止了铟原子的偏析。但GaAs插入层的引入也会产生“局域态”, 影响量子阱的发光性质。本研究可以加深对InGaAs/AlGaAs多量子阱辐射复合机制的理解,并且对引入GaAs插入层的InGaAs/AlGaAs多量子阱发光性质的研究具有重要意义。
As a common group Ⅲ-Ⅴ epitaxial material, InGaAs/AlGaAs multi-quantum wells (MQWs) are commonly used in the fields of semiconductor lasers and solar cells. However, the segregation of indium atoms and the poor growth quality of MQWs have not been well resolved due to the growth temperature differences between the well layer and barrier layer of quantum wells. In this paper, a gallium arsenide (GaAs) material is designed as an insertion layer (ISL) to be used in the structure of InGaAs/AlGaAs MQWs. PL and XRD, AFM tests show that the GaAs ISL guarantees more radiation recombination in the MQWs structure, preventing segregation of indium atoms. However, the introduction of GaAs ISL will induce “local states”, which will affect the luminescence properties of quantum wells. This study not only can deepen the understanding of the radiation recombination mechanism of InGaAs/AlGaAs multi-quantum wells, but also has great significance in the luminescence properties study of InGaAs/AlGaAs MQWs with GaAs ISL.
InGaAs/AlGaAs多量子阱局域态插入层金属有机化合物气相外延(MOCVD)
InGaAs/AlGaAs multiple quantum wellslocal stateinsert layermetal-organic compound gas phase epitaxy (MOCVD)
韩丽丽. InGaAs/AlGaAs红外发光二极管的制备及性能研究 [D]. 北京: 中国科学院大学(中国科学院物理研究所), 2021.
HAN L L. Fabrication and Characteristics of InGaAs/AIGaAs Infrared Light⁃emitting Diode [D]. Beijing: University of Chinese Academy of Sciences (Institute of Physics,CAS), 2021. (in Chinese)
方俊, 孙令, 刘洁. As元素分子态对InGaAs/AlGaAs量子阱红外探测器性能的影响 [J]. 半导体光电, 2018, 39(5): 607-611, 653.
FANG J, SUN L, LIU J. The effects of As molecular state on the properties of InGaAs/AlGaAs quantum well infrared photodetector [J]. Semicond. Optoelectron., 2018, 39(5): 607-611, 653. (in Chinese)
方俊. As分子态对InGaAs/AlGaAs量子阱红外探测器性能的影响 [D]. 北京: 中国科学院大学(中国科学院物理研究所), 2018. doi: 10.16818/j.issn1001-5868.2018.05.001http://dx.doi.org/10.16818/j.issn1001-5868.2018.05.001
FANG J. The Effect of Arsenic Molecular Beam Species on the Properties of InGaAs/AIGaAs Quantum Well Infrared Photodetector [D]. Beijing: University of Chinese Academy of Sciences (Institute of Physics,CAS), 2018. (in Chinese). doi: 10.16818/j.issn1001-5868.2018.05.001http://dx.doi.org/10.16818/j.issn1001-5868.2018.05.001
霍大云, 石震武, 张伟, 等. InGaAs/AlGaAs量子阱红外探测器中势垒生长温度的研究 [J]. 物理学报, 2017, 66(6): 068501. doi: 10.7498/aps.66.068501http://dx.doi.org/10.7498/aps.66.068501
HUO D Y, SHI Z W, ZHANG W, et al. Barrier growth temperature of InGaAs/AlGaAs-quantum well infrared photodetector [J]. Acta Phys. Sinica, 2017, 66(6): 068501. (in Chinese). doi: 10.7498/aps.66.068501http://dx.doi.org/10.7498/aps.66.068501
YU X H, CHAI C C, LIU Y, et al. Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor [J]. Chin. Phys. B, 2015, 24(4): 048502. doi: 10.1088/1674-1056/24/4/048502http://dx.doi.org/10.1088/1674-1056/24/4/048502
DAS D, GHADI H, TONGBRAM B, et al. The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructures [J]. J. Lumin., 2017, 192: 277-282. doi: 10.1016/j.jlumin.2017.06.054http://dx.doi.org/10.1016/j.jlumin.2017.06.054
CHEN L, LIN W, WANG H Q, et al. Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling [J]. Light: Sci. Appl., 2020, 9(1): 104. doi: 10.1038/s41377-020-00342-3http://dx.doi.org/10.1038/s41377-020-00342-3
ALLEN C N, FINNIE P, RAYMOND S, et al. Inhomogeneous broadening in quantum dots with ternary aluminum alloys [J]. Appl. Phys. Lett., 2001, 79(17): 2701-2703. doi: 10.1063/1.1410333http://dx.doi.org/10.1063/1.1410333
JIANG W, ZHENG T, WU B M, et al. A versatile photodetector assisted by photovoltaic and bolometric effects [J]. Light: Sci. Appl., 2020, 9(1): 160. doi: 10.1038/s41377-020-00396-3http://dx.doi.org/10.1038/s41377-020-00396-3
SHI Z Q, WANG L, ZHEN H, et al. Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection [J]. Nanoscale Res. Lett., 2013, 8(1): 310. doi: 10.1186/1556-276x-8-310http://dx.doi.org/10.1186/1556-276x-8-310
ZHANG D H, SUN L, SHI W, et al. Strained p-type InGaAs/AlGaAs multiple quantum well infrared photodetectors [C]. Proceedings of SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, Shanghai, China, 2002. doi: 10.1117/12.465825http://dx.doi.org/10.1117/12.465825
MEI T, KARUNASIRI G, LEE T P, et al. Investigation on two-color detection using asymmetric InGaAs/GaAs/AlGaAs multiquantum wells with superlattice barriers [C]. Proceedings of SPIE 4580, Optoelectronics, Materials, and Devices for Communications, Beijing, China, 2001: 232-242. doi: 10.1117/12.444968http://dx.doi.org/10.1117/12.444968
ZHANG B, WANG H Z, WANG X, et al. Effect of GaAs insertion layer on the properties improvement of InGaAs/AlGaAs multiple quantum wells grown by metal-organic chemical vapor deposition [J]. J. Alloys Compd., 2021, 872: 159470. doi: 10.1016/j.jallcom.2021.159470http://dx.doi.org/10.1016/j.jallcom.2021.159470
周勇, 孙迎波, 周勋, 等. 大应变InGaAs/GaAs/AlGaAs微带超晶格中波红外QWIP的MOCVD生长 [J]. 半导体光电, 2013, 34(2): 221-225.
ZHOU Y, SUN Y B, ZHOU X, et al. Growth of highly strained InGaAs/GaAs/AlGaAs mini-band supper-lattices for middle wavelength infrared QWIP detectors [J]. Semicond. Optoelectron., 2013, 34(2): 221-225. (in Chinese)
MA S F, LI L, KONG Q B, et al. Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells [J]. Chin. Phys. B, 2023, 32(3): 037801. doi: 10.1088/1674-1056/ac70b5http://dx.doi.org/10.1088/1674-1056/ac70b5
MARMALYUK A A, GOVORKOV O I, PETROVSKY A V, et al. Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD [J]. Nanotechnology, 2001, 12(4): 434-436. doi: 10.1088/0957-4484/12/4/309http://dx.doi.org/10.1088/0957-4484/12/4/309
LIU D F, WANG E X, GUO K X. Influence of thin AlAs layer insertion on intersubband optical transitions in GaAs/AlGaAs quantum- well structures [J]. Phys. E: Low⁃Dimens. Syst. Nanostruct., 2017, 86: 64-67. doi: 10.1016/j.physe.2016.10.008http://dx.doi.org/10.1016/j.physe.2016.10.008
HA M T H, HUYNH S H, DO H B, et al. Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition [J]. Appl. Phys. Express, 2018, 11(5): 051202. doi: 10.7567/apex.11.051202http://dx.doi.org/10.7567/apex.11.051202
DONG H L, SUN J, MA S F, et al. Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells [J]. Nanoscale, 2016, 8(11): 6043-6056. doi: 10.1039/c5nr07938ahttp://dx.doi.org/10.1039/c5nr07938a
HE X G, RAZEGHI M. Investigation of the heteroepitaxial interfaces in the GaInP/GaAs superlattices by high‐resolution X‐ray diffractions and dynamical simulations [J]. J. Appl. Phys., 1993, 73(7): 3284-3290. doi: 10.1063/1.354038http://dx.doi.org/10.1063/1.354038
王曲惠, 王海珠, 王骄, 等. 高应变InGaAs/GaAs多量子阱中的局域态问题 [J]. 发光学报, 2023, 44(4): 627-633. doi: 10.37188/cjl.20220375http://dx.doi.org/10.37188/cjl.20220375
WANG Q H, WANG H Z, WANG J, et al. Localized states of high-strain InGaAs/GaAs multiple quantum wells [J]. Chin. J. Lumin., 2023, 44(4): 627-633. (in Chinese). doi: 10.37188/cjl.20220375http://dx.doi.org/10.37188/cjl.20220375
WANG J, WANG H Z, WANG Q H, et al. Effect of localized states on the optical properties in InGaAs/GaAs multiple quantum wells grown by MOCVD [J]. Photonics Nanostruct.⁃Fundam. Appl., 2022, 51: 101047. doi: 10.1016/j.photonics.2022.101047http://dx.doi.org/10.1016/j.photonics.2022.101047
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