Effect of Defects on Performance of All Inorganic Perovskite Solar Cells

YAO Guangping; WEN Chao; LIU Jiapeng; SU Zisheng

doi:10.37188/CJL.20230196

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Effect of Defects on Performance of All Inorganic Perovskite Solar Cells

Device Fabrication and Physics | 更新时间：2023-11-27

- Effect of Defects on Performance of All Inorganic Perovskite Solar Cells
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 11, Pages: 2033-2040(2023)
- 作者机构：
  
  1.泉州师范学院物理与信息工程学院福建省先进微纳光子技术与器件重点实验室，福建泉州　362000
  2.福州大学先进制造学院，福建泉州　362200
  3.福建师范大学光电与信息工程学院，福建福州　350117
- 作者简介：
- 基金信息：
  
  Youth Research Project of Fujian Provincial Department of Education(JAT200567);Natural Science Foundation of Fujian Province(2023J01890);Quanzhou City Science and Technology Program of China(2020C025R)
- DOI：10.37188/CJL.20230196
  CLC： O475.31;O482.7;TM914.4
- Published：05 November 2023，
  
  Received：30 August 2023，
  
  Revised：14 September 2023，
- 稿件说明：
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姚广平,文超,刘佳澎等.缺陷对全无机钙钛矿太阳能电池性能的影响[J].发光学报,2023,44(11):2033-2040.

YAO Guangping,WEN Chao,LIU Jiapeng,et al.Effect of Defects on Performance of All Inorganic Perovskite Solar Cells[J].Chinese Journal of Luminescence,2023,44(11):2033-2040.
姚广平,文超,刘佳澎等.缺陷对全无机钙钛矿太阳能电池性能的影响[J].发光学报,2023,44(11):2033-2040. DOI： 10.37188/CJL.20230196.

YAO Guangping,WEN Chao,LIU Jiapeng,et al.Effect of Defects on Performance of All Inorganic Perovskite Solar Cells[J].Chinese Journal of Luminescence,2023,44(11):2033-2040. DOI： 10.37188/CJL.20230196.

摘要

利用一维太阳能电池仿真软件SCAPS对全无机钙钛矿太阳能电池中缺陷对器件性能的影响进行了研究。研究表明，在ITO/SnO

/CsPbI

/CuI/Au电池中，CuI/CsPbI

界面和CsPbI

光活性层缺陷密度对器件的性能具有较大影响。随着缺陷密度增大，器件的开路电压、短路电流、填充因子和光电转化效率均减小，尤其是当缺陷密度大于10

-3

后，器件性能显著下降。相反地，CsPbI

/SnO

界面缺陷对器件性能无显著影响。通过优化器件的缺陷密度、光活性层的厚度和受主掺杂浓度，全无机钙钛矿太阳能电池的光电转化效率可以达到20%以上。

Abstract

The effects of defects on the performance of all inorganic perovskite solar cells was studied using a one-dimensional solar cell simulation software SCAPS. It is found that in the device ITO/SnO

/CsPbI

/CuI/Au， the density of the defects at the CuI/CsPbI

interface and in the CsPbI

photoactive layer has dramatically influence on the performance of the device. With the increase of the defect density， the open-circuit voltage， short-circuit current， filling factor， and power conversion efficiency of the device all decrease， especially when the defect density exceeds 10

-3

. On the contrary， the defects at the CsPbI

/SnO

interface have almost no effect on device performance. By optimizing the defect density of the device， the thickness and doping concentration of the photoactive layer， a power conversion efficiency higher than 20% can be obtained in the all inorganic perovskite solar cells.

关键词

钙钛矿太阳能电池全无机缺陷仿真

Keywords

perovskite solar cellall inorganicdefectsimulation

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