80 Gb/s High Speed PAM4 Modulated 850 nm Vertical-cavity Surface-emitting Laser

WANG Yanjing; TONG Cunzhu; LUAN Xiaoqian; JIANG Ning; TONG Haixia; WANG Lijie; TIAN Sicong; MENG Bo

doi:10.37188/CJL.20230170

您当前的位置：

首页 >

文章列表页 >

80 Gb/s High Speed PAM4 Modulated 850 nm Vertical-cavity Surface-emitting Laser

Device Fabrication and Physics | 更新时间：2023-11-01

- 80 Gb/s High Speed PAM4 Modulated 850 nm Vertical-cavity Surface-emitting Laser
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 10, Pages: 1811-1815(2023)
- 作者机构：
  
  1.中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室，吉林长春　130033
  2.吉光半导体科技有限公司，吉林长春　130031
- 作者简介：
- 基金信息：
  
  The K.C. Wong Education Foundation(GJTD⁃2020⁃10);The Open Fund of State Key Laboratory of High Power Semiconductor Lasers(2022⁃CCLG⁃ZDSYS⁃005)
- DOI：10.37188/CJL.20230170
  CLC： TN248.4
- Published：05 October 2023，
  
  Received：24 July 2023，
  
  Revised：08 August 2023，
- 稿件说明：
移动端阅览
王延靖,佟存柱,栾晓倩等.80 Gb/s高速PAM4调制850 nm垂直腔面发射激光器[J].发光学报,2023,44(10):1811-1815.

WANG Yanjing,TONG Cunzhu,LUAN Xiaoqian,et al.80 Gb/s High Speed PAM4 Modulated 850 nm Vertical-cavity Surface-emitting Laser[J].Chinese Journal of Luminescence,2023,44(10):1811-1815.
王延靖,佟存柱,栾晓倩等.80 Gb/s高速PAM4调制850 nm垂直腔面发射激光器[J].发光学报,2023,44(10):1811-1815. DOI： 10.37188/CJL.20230170.

WANG Yanjing,TONG Cunzhu,LUAN Xiaoqian,et al.80 Gb/s High Speed PAM4 Modulated 850 nm Vertical-cavity Surface-emitting Laser[J].Chinese Journal of Luminescence,2023,44(10):1811-1815. DOI： 10.37188/CJL.20230170.

摘要

展示了高速直接调制850 nm氧化物限制垂直腔面发射激光器（VCSEL）的结果。优化设计应变InGaAs/AlGaAs量子阱以实现高微分增益，通过表面刻蚀来调节光子寿命实现响应平坦化。研制的氧化物孔径约7 µm的VCSEL具有平坦的频率响应，3 dB调制带宽为24 GHz，相对噪声强度值-155 dB/Hz，未采用任何预加重和均衡技术情况下PAM4调制数据传输速率达80 Gb/s。

Abstract

We present the results of a high-speed direct modulation 850 nm oxide confined vertical cavity surface emitting laser（VCSEL），optimize the design of strain InGaAs/AlGaAs quantum wells to achieve high differential gain， and adjust the photon lifetime through surface etching to achieve response flattening. The developed VCSEL with an oxide aperture of about 7 µm has a flat frequency response， a 3 dB modulation bandwidth of 24 GHz， and a relative noise intensity value of -155 dB/Hz. Without any pre-emphasis and equalization technology， the PAM4 modulation data transmission rate can reach 80 Gb/s.

关键词

垂直腔面发射激光器高速PAM4调制

Keywords

vertical-cavity surface-emitting laserhigh-speedPAM4 modulation

references

KUCHTA D M. High capacity VCSEL-based links ［C］. Proceedings of 2017 Optical Fiber Communications Conference and Exhibition， Los Angeles， 2017. doi: 10.1364/ofc.2017.tu3c.4http://dx.doi.org/10.1364/ofc.2017.tu3c.4

FENG M， WU C H， HOLONYAK N. Oxide-confined VCSELs for high-speed optical interconnects ［J］. IEEE J. Quant. Electron.， 2018， 54（3）： 2400115. doi: 10.1109/jqe.2018.2817068http://dx.doi.org/10.1109/jqe.2018.2817068

TATUM J A， LANDRY G D， GAZULA D， et al. VCSEL-based optical transceivers for future data center applications ［C］. Proceedings of 2018 Optical Fiber Communications Conference and Exposition， San Diego， 2018. doi: 10.1364/ofc.2018.m3f.6http://dx.doi.org/10.1364/ofc.2018.m3f.6

ADAMS D. Mega data center optics report ［R］. Lorton：LightCounting， 2021.

WANG J Y， MURTY M V R， FENG Z W， et al. 100 Gb/s PAM4 oxide VCSEL development progress at Broadcom ［C］. Proceedings of SPIE 11300， Vertical⁃Cavity Surface⁃Emitting Lasers ⅩⅩⅣ， San Francisco， 2020. doi: 10.1117/12.2543802http://dx.doi.org/10.1117/12.2543802

GIOVANE L M， WANG J Y， MURTY M V R， et al. Volume manufacturable high speed 850 nm VCSEL for 100 G ethernet and beyond ［C］. Proceedings of 2016 Optical Fiber Communications Conference and Exhibition， Anaheim， 2016. doi: 10.1364/ofc.2016.tu3d.5http://dx.doi.org/10.1364/ofc.2016.tu3d.5

WANG J Y， RAMANA MURTY M V， WANG C， et al. 50 Gb/s PAM-4 oxide VCSEL development progress at broadcom ［C］. Proceedings of SPIE 10122， Vertical⁃Cavity Surface⁃Emitting Lasers ⅩⅪ， San Francisco， 2017. doi: 10.1117/12.2250211http://dx.doi.org/10.1117/12.2250211

RAMANA MURTY M V， WANG J Y， CHENG A N， et al. VCSEL noise characterization for data rates beyond 25 Gb/s ［C］. Proceedings of SPIE 10552， Vertical⁃Cavity Surface⁃Emitting Lasers ⅩⅩⅡ， San Francisco， 2018： 1055205. doi: 10.1117/12.2290955http://dx.doi.org/10.1117/12.2290955

GIOVANE L M， WANG J Y， RAMANA MURTY M V， et al. Development of next generation data communication VCSELs ［C］. Proceedings of the 2020 Optical Fiber Communications Conference and Exhibition， San Diego， 2020. doi: 10.1364/ofc.2020.m3d.5http://dx.doi.org/10.1364/ofc.2020.m3d.5

RAMANA MURTY M V， WANG J Y， HARREN A L， et al. Development and characterization of 100 Gb/s data communication VCSELs ［J］. IEEE Photonics Technol. Lett.， 2021， 33（16）： 812-815. doi: 10.1109/lpt.2021.3069146http://dx.doi.org/10.1109/lpt.2021.3069146

WANG J Y， RAMANA MURTY M V， FENG Z W， et al. High speed 850 nm oxide VCSEL development for 100 Gb/s ethernet at Broadcom ［C］. Proceedings of SPIE 12020， Vertical-Cavity Surface-Emitting Lasers ⅩⅩⅥ， San Francisco， 2022. doi: 10.1117/12.2607305http://dx.doi.org/10.1117/12.2607305

HOSER M， KAISER W， QUANDT D， et al. Highly reliable 106 Gb/s PAM-4 850 nm multi-mode VCSEL for 800 G ethernet applications ［C］. Proceedings of 2022 Optical Fiber Communications Conference and Exhibition， San Diego， 2022. doi: 10.1364/ofc.2022.tu2d.5http://dx.doi.org/10.1364/ofc.2022.tu2d.5

AOKI T， HIIRO H， TANAKA R， et al. Performance of PAM-4 VCSEL for short-reach 100 Gb/s per lane applications up to 85 ℃ ［C］. Proceedings of SPIE 12020， Vertical-cavity Surface-emitting Lasers ⅩⅩⅥ， San Francisco， 2022. doi: 10.1117/12.2607702http://dx.doi.org/10.1117/12.2607702

田思聪，佟存柱，王立军，等. 长春光机所高速垂直腔面发射激光器研究进展［J］. 中国光学（中英文）， 2022， 15（5）： 946-953. doi: 10.37188/co.2022-0136http://dx.doi.org/10.37188/co.2022-0136

TIAN S C， TONG C Z， WANG L J， et al. Research progress of high-speed vertical-cavity surface-emitting laser in CIOMP ［J］. Chin. Opt.， 2022， 15（5）： 946-953. （in Chinese）. doi: 10.37188/co.2022-0136http://dx.doi.org/10.37188/co.2022-0136

徐汉阳，田思聪，韩赛一，等. 53 Gbit/s高速单模940 nm垂直腔面发射激光器［J］. 发光学报， 2022， 43（7）： 1114-1120. doi: 10.37188/CJL.20220106http://dx.doi.org/10.37188/CJL.20220106

XU H Y， TIAN S C， HAN S Y， et al. 53 Gbit/s high speed single mode 940 nm vertical-cavity surface-emitting laser ［J］. Chin. J. Lumin.， 2022， 43（7）： 1114-1120. （in Chinese）. doi: 10.37188/CJL.20220106http://dx.doi.org/10.37188/CJL.20220106

WANG Y J， TONG H X， TONG C Z， et al. High-speed 1 030 nm anti-waveguide VCSELs with 25 GHz modulation bandwidth ［J］. IEEE Photonics J.， 2023， 15（2）： 1501005. doi: 10.1109/jphot.2023.3260924http://dx.doi.org/10.1109/jphot.2023.3260924

HAGLUND E， HAGLUND Å， GUSTAVSSON J S， et al. Reducing the spectral width of high speed oxide confined VCSELs using an integrated mode filter ［C］. Proceedings of SPIE 8276， Vertical-Cavity Surface-Emitting Lasers ⅩⅥ， San Francisco， 2012： 82760L. doi: 10.1117/12.908424http://dx.doi.org/10.1117/12.908424

Views

502

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Research Progress on High-speed Photonic Crystal Surface-emitting Lasers

Thermal Analysis and Structure Optimization of High-speed Optical Communication-VCSEL

Study of Oxide-grating Vertical-cavity Surface-emitting Lasers

Stable Polarization Control of 980 nm High-power Vertical-cavity Surface-emitting Lasers Using Sub-wavelength Rectangular-metal-gratings

Related Author

WANG Yanjing

TONG Cunzhu

LUAN Xiaoqian

JIANG Ning

TONG Haixia

WANG Lijie

TIAN Sicong

MENG Bo

Related Institution

State Key laboratory of Luminescence and Application， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences

Institute of Solid State Physics， Center for Nano-Optics， Technical University of Berlin

State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences

University of Chinese Academy of Sciences

Bimberg Sino-German Green Photonics Research Center， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰