浏览全部资源
扫码关注微信
1.华南理工大学 电子与信息学院, 广东 广州 510640
2.广东晶科电子股份有限公司, 广东 广州 511458
3.中山市华南理工大学现代产业技术研究院, 广东 中山 528437
Published:05 October 2023,
Received:29 June 2023,
Revised:17 July 2023,
扫 描 看 全 文
万垂铭,曾照明,肖国伟等.高气密性的深紫外LED半无机封装技术[J].发光学报,2023,44(10):1842-1848.
WAN Chuiming,ZENG Zhaoming,XIAO Guowei,et al.Semi-inorganic Packaging Technology of DUV-LEDs with High-vapor Tightness[J].Chinese Journal of Luminescence,2023,44(10):1842-1848.
万垂铭,曾照明,肖国伟等.高气密性的深紫外LED半无机封装技术[J].发光学报,2023,44(10):1842-1848. DOI: 10.37188/CJL.20230156.
WAN Chuiming,ZENG Zhaoming,XIAO Guowei,et al.Semi-inorganic Packaging Technology of DUV-LEDs with High-vapor Tightness[J].Chinese Journal of Luminescence,2023,44(10):1842-1848. DOI: 10.37188/CJL.20230156.
深紫外LED可通过物理方式破坏病毒和细菌的结构,从而获得高效消毒的效果。相比于工艺成熟的蓝光LED,如何提高深紫外LED的封装可靠性和出光率仍是关键问题。本文采用基底预热方式微固化封装胶,结合阵列点胶方式将石英玻璃固定在镀铜围坝,制备了半无机封装的深紫外LED。该器件的输出波长为275 nm,半峰宽约为11 nm。对比传统类透明材料封装的器件,石英封装的深紫外LED有更高的出光率。在真空红墨水和氦气漏率实验中,采用本文提出的半无机封装技术的深紫外LED器件表现出高密封性。此外,在加速老化测试中,该封装器件的光衰速率在20%以内。实验结果表明,对比有机封装的深紫外LED器件,在基底预热条件下,采用阵列点胶固定石英玻璃是现阶段提高深紫外LED可靠性的一种封装方法。
Deep ultraviolet light-emitting diodes (DUV-LEDs) can physically destroy the structure of viruses and bacteria, thus achieving efficient disinfection. Compared with the mature blue LED process, how to improve the packaging reliability and light output efficiency of DUV-LEDs is still a key problem. In this paper, a semi-inorganic packaging DUV-LED was prepared by using substrate preheating method of micro-cured encapsulation adhesive and combining with array dispensation method to bond quartz glass in plated dam copper. The output wavelength of the device is 275 nm and its half-peak width is approximately 11 nm. Quartz-packaged DUV-LEDs have higher light output than traditional devices packaged with transparent materials. DUV-LED devices using the packaging technique presented herein exhibit high air hermeticity in vacuum red ink and helium environments. Moreover, in the accelerated aging test, the light decay rate of this packaged device is less than 20%. Experimental results show that using array dispensing to bond quartz glass under substrate preheating is a packaging method to improve the reliability of DUV-LEDs compared with organic packaging.
深紫外LED可靠性出光率基底预热阵列点胶
DUV-LEDsreliabilitylight output efficiencysubstrate preheatingarray dispensing
KNEISSL M, RASS J. Ⅲ-Nitride Ultraviolet Emitters: Technology and Applications [M]. Cham: Springer, 2016. doi: 10.1007/978-3-319-24100-5http://dx.doi.org/10.1007/978-3-319-24100-5
HIRAYAMA H, MAEDA N, FUJIKAWA S, et al. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes [J]. Jpn. J. Appl. Phys., 2014, 53(10): 100209-1-10. doi: 10.7567/jjap.53.100209http://dx.doi.org/10.7567/jjap.53.100209
PENG Y, LIANG R L, MOU Y, et al. Progress and perspective of near-ultraviolet and deep-ultraviolet light-emitting diode packaging technologies [J]. J. Electron. Packag., 2019, 141(4): 040804-1-11. doi: 10.1115/1.4044624http://dx.doi.org/10.1115/1.4044624
彭洋, 陈明祥, 罗小兵. 深紫外LED封装技术现状与展望 [J]. 发光学报, 2021, 42(4): 542-559. doi: 10.37188/CJL.20200394http://dx.doi.org/10.37188/CJL.20200394
PENG Y, CHEN M X, LUO X B. Status and perspectives of deep ultraviolet LED packaging technology [J]. Chin. J. Lumin., 2021, 42(4): 542-559. (in Chinese). doi: 10.37188/CJL.20200394http://dx.doi.org/10.37188/CJL.20200394
梁延杰, 刘景伟, 闫劭, 等. 蓝光LED激发深紫外上转换发光材料的光学定位与追踪应用 [J]. 发光学报, 2022, 43(9): 1436-1445. doi: 10.37188/CJL.20220177http://dx.doi.org/10.37188/CJL.20220177
LIANG Y J, LIU J W, YAN S, et al. Blue LED-excitable deep ultraviolet upconversion phosphor for optical locating and tracking application [J]. Chin. J. Lumin., 2022, 43(9): 1436-1445. (in Chinese). doi: 10.37188/CJL.20220177http://dx.doi.org/10.37188/CJL.20220177
林岳, 陈华山, 陈灿和, 等. 深紫外发光二极管研究进展及其在杀菌消毒中的应用 [J]. 厦门大学学报(自然科学版), 2020, 59(3): 360-372. doi: 10.6043/j.issn.0438-0479.202003048http://dx.doi.org/10.6043/j.issn.0438-0479.202003048
LIN Y, CHEN H S, CHEN C H, et al. Progress in the deep-ultraviolet light-emitting diode and its application on sterilization and disinfection [J]. J. Xiamen Univ. (Nat. Sci.), 2020, 59(3): 360-372. (in Chinese). doi: 10.6043/j.issn.0438-0479.202003048http://dx.doi.org/10.6043/j.issn.0438-0479.202003048
王佳乐. 深紫外LED的前景及市场应用价值探究 [J]. 现代信息科技, 2019, 3(8): 49-50. doi: 10.3969/j.issn.2096-4706.2019.08.019http://dx.doi.org/10.3969/j.issn.2096-4706.2019.08.019
WANG J L. Research on the prospect and market application value of deep ultraviolet LED [J]. Mod. Inf. Technol., 2019, 3(8): 49-50. (in Chinese). doi: 10.3969/j.issn.2096-4706.2019.08.019http://dx.doi.org/10.3969/j.issn.2096-4706.2019.08.019
YAMADA K, FURUSAWA Y, NAGAI S, et al. Development of underfilling and encapsulation for deep-ultraviolet LEDs [J]. Appl. Phys. Express, 2015, 8(1): 012101-1-3. doi: 10.7567/apex.8.012101http://dx.doi.org/10.7567/apex.8.012101
吴峰, 戴江南, 陈长清. AlGaN基深紫外发光二极管研究进展 [J]. 人工晶体学报, 2020, 49(11): 2079-2097. doi: 10.3969/j.issn.1000-985X.2020.11.010http://dx.doi.org/10.3969/j.issn.1000-985X.2020.11.010
WU F, DAI J N, CHEN C Q. Research progress of AlGaN based deep ultraviolet light emitting diodes [J]. J. Synth. Cryst., 2020, 49(11): 2079-2097. (in Chinese). doi: 10.3969/j.issn.1000-985X.2020.11.010http://dx.doi.org/10.3969/j.issn.1000-985X.2020.11.010
MURAMOTO Y, KIMURA M, NOUDA S. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp [J]. Semicond. Sci. Technol., 2014, 29(8): 084004-1-8. doi: 10.1088/0268-1242/29/8/084004http://dx.doi.org/10.1088/0268-1242/29/8/084004
KIM J, MA B, LEE K. Study on influence of silicone encapsulant for ceramic LED package after HTOL test [C]. The 5th Electronics System⁃integration Technology Conference (ESTC), Helsinki, Finland, 2014: 1-4. doi: 10.1109/estc.2014.6962856http://dx.doi.org/10.1109/estc.2014.6962856
BAE J Y, KIM Y, KIM H, et al. Ultraviolet light stable and transparent sol-gel methyl siloxane hybrid material for UV light-emitting diode (UV LED) encapsulant [J]. ACS Appl. Mater. Interfaces, 2015, 7(2): 1035-1039. doi: 10.1021/am507132ahttp://dx.doi.org/10.1021/am507132a
王君从, 杨婷, 胡美玲. 电子封装用陶瓷材料研究现状 [J]. 工程建设, 2021, 4(10): 121-128.
WANG J C, YANG T, HU M L. Research status of ceramic materials for electronic packaging [J]. Eng. Constr., 2021, 4(10): 121-128. (in Chinese)
杨宇铭, 李燕, 郑怀文, 等. 用于AlGaN基DUV LED封装的高反射镀铝DPC陶瓷基板 [J]. 液晶与显示, 2020, 35(10): 991-999. doi: 10.37188/YJYXS20203510.0991http://dx.doi.org/10.37188/YJYXS20203510.0991
YANG Y M, LI Y, ZHENG H W, et al. High-reflection Al-plated DPC ceramic substrate for AlGaN-based DUV LED packaging [J]. Chin. J. Liq. Cryst. Disp., 2020, 35(10): 991-999. (in Chinese). doi: 10.37188/YJYXS20203510.0991http://dx.doi.org/10.37188/YJYXS20203510.0991
LU C C, WANG C P, LIU C Y, et al. The efficiency and reliability improvement by utilizing quartz airtight packaging of UVC LEDs [J]. IEEE Trans. Electron Devices, 2016, 63(8): 3143-3146. doi: 10.1109/ted.2016.2580707http://dx.doi.org/10.1109/ted.2016.2580707
QIU J Y, PENG Y, MIN X H, et al. Enhanced light extraction of DUV LEDs by using a quartz lens with three-dimensional structure [J]. IEEE Photonics Technol. Lett., 2021, 33(24): 1403-1406. doi: 10.1109/lpt.2021.3123574http://dx.doi.org/10.1109/lpt.2021.3123574
LIU J L, LIU J X, LI S, et al. Deep-ultraviolet LEDs with all-inorganic and hermetic packaging by 3D ceramic substrate [J]. IEEE Photonics Technol. Lett., 2021, 33(4): 205-208. doi: 10.1109/lpt.2020.3049000http://dx.doi.org/10.1109/lpt.2020.3049000
LIN H W, HUANG H M, WAN C M, et al. Enhancement of radiation efficiency for DUV-LEDs by AlN-doped silicone layer filled chip-side [J]. IEEE Photonics Technol. Lett., 2023, 35(17): 939-942. doi: 10.1109/lpt.2023.3289174http://dx.doi.org/10.1109/lpt.2023.3289174
PENG Y, GUO X, LIANG R L, et al. Enhanced light extraction from DUV-LEDs by AlN-doped fluoropolymer encapsulation [J]. IEEE Photonics Technol. Lett., 2017, 29(14): 1151-1154. doi: 10.1109/lpt.2017.2705722http://dx.doi.org/10.1109/lpt.2017.2705722
王玮东, 楚春双, 张丹扬, 等. 俄歇复合、电子泄漏和空穴注入对深紫外发光二极管效率衰退的影响 [J]. 发光学报, 2021, 42(7): 897-903. doi: 10.37188/CJL.20210102http://dx.doi.org/10.37188/CJL.20210102
WANG W D, CHU C S, ZHANG D Y, et al. Impact of auger recombination, electron leakage and hole injection on efficiency droop for DUV LEDs [J]. Chin. J. Lumin., 2021, 42(7): 897-903. (in Chinese). doi: 10.37188/CJL.20210102http://dx.doi.org/10.37188/CJL.20210102
苏锡安, 高瑛, 姜锦秀. GaP∶N LED中深能级对退化特性的影响 [J]. 发光学报, 1988, 9(2): 159-165.
SU X A, GAO Y, JIANG J X. Effect of deep level on degradation characteristic in GaP∶N LED [J]. Chin. J. Lumin., 1988, 9(2): 159-165. (in Chinese)
0
Views
133
下载量
0
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution