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Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9
增强出版- Chinese Journal of Luminescence Vol. 44, Issue 8, Pages: 1471-1478(2023)
- 作者机构：
哈尔滨工业大学 材料科学与工程学院， 黑龙江 哈尔滨 150001
- 作者简介：
- 基金信息：National Key R&D Program of China(2019YFA0705201)
DOI：10.37188/CJL.20230063
CLC： TN36Published：05 August 2023，
Received：13 March 2023，
Revised：02 April 2023，
扫 描 看 全 文
韩鹏,刘鹤,国凤云等.BiI3修饰Cs3Bi2I9自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478.
HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9[J].Chinese Journal of Luminescence,2023,44(08):1471-1478.
韩鹏,刘鹤,国凤云等.BiI3修饰Cs3Bi2I9自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478. DOI： 10.37188/CJL.20230063.
HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9[J].Chinese Journal of Luminescence,2023,44(08):1471-1478. DOI： 10.37188/CJL.20230063.
摘要
在溶液法合成Cs
3
Bi
2
I
9
前驱体溶液的基础上，采用添加BiI
3
修饰Cs
3
Bi
2
I
9
溶液的方法后得到Cs
3
Bi
2
I
9
/BiI
3
薄膜并制备出具有自供能特性的Cs
3
Bi
2
I
9
/BiI
3
薄膜光电化学型探测器。结果表明，添加的BiI
3
以第二相形式存在于Cs
3
Bi
2
I
9
薄膜中，形成两相混合结构。在紫外光（365 nm）单色光照射下，Cs
3
Bi
2
I
9
/BiI
3
探测器的开关比达到3 198，响应度和探测率分别为2.85×10
-3
A/W和3.77×10
10
Jones。在绿光（530 nm）单色光照射下，Cs
3
Bi
2
I
9
/BiI
3
探测器的开关比达到1 172，响应度和探测率分别为6.9×10
-4
A/W和1.76×10
10
Jones，同时展现出红光波段（625 nm）的良好响应。相较于Cs
3
Bi
2
I
9
探测器，Cs
3
Bi
2
I
9
/BiI
3
器件探测性能均有大幅度提高，归因于BiI
3
对非辐射缺陷的钝化作用。本工作首次尝试将Cs
3
Bi
2
I
9
应用在光电化学型结构探测器中，通过BiI
3
的修饰成功提高了器件性能，为低毒铋基钙钛矿的光电探测应用性能提升提供了新思路。
Abstract
Based on the synthesis of Cs
3
Bi
2
I
9
precursor solution by using solution method， Cs
3
Bi
2
I
9
/BiI
3
thin films were obtained by adding BiI
3
to modify Cs
3
Bi
2
I
9
solution， and the Cs
3
Bi
2
I
9
/BiI
3
photodetectors based on the device types of photoelectrochemical detectors with self-powered properties were also constructed. It is found that the added BiI
3
exists in the form of the second phase， forming a two-phase mixed structure. Under illumination of ultraviolet（365 nm） monochromatic light， Cs
3
Bi
2
I
9
/BiI
3
photodetectors show on-off ratio of 3 198， corresponding to a response of 2.85×10
-3
A/W and a detectivity of 3.77×10
10
Jones. While under illumination of green light（530 nm）， the device also exhibits on-off ratio of 1 172， a response of 6.9×10
-4
A/W and a detectivity of 1.76×10
10
Jones. Compared with simple Cs
3
Bi
2
I
9
photodetectors， the detection performance of Cs
3
Bi
2
I
9
/BiI
3
photodetectors has been greatly improved， which is attributed to the passivation of BiI
3
on non-radiation defects. It is the first time to apply Cs
3
Bi
2
I
9
in the photoelectrochemical structure detector. The modification of BiI
3
successfully improves the device performance， which provides a new idea for improving the performance of low-toxic bismuth-based perovskite photodetection application.
关键词
Cs3Bi2I9光电化学型探测器自供能探测BiI3第二相
Keywords
Cs3Bi2I9photoelectrochemical detectorsself-powered detectionBiI3second phase
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