Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9

HAN Peng

doi:10.37188/CJL.20230063

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Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI₃ Modified Cs₃Bi₂I₉

Device Fabrication and Physics | 更新时间：2023-09-06

- Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI₃ Modified Cs₃Bi₂I₉
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 8, Pages: 1471-1478(2023)
- 作者机构：
  
  1.哈尔滨工业大学材料科学与工程学院，黑龙江哈尔滨　150001
- 作者简介：
- 基金信息：
  
  National Key R&D Program of China(2019YFA0705201)
- DOI：10.37188/CJL.20230063
  CLC：
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Cite this article
韩鹏,刘鹤,国凤云等.BiI₃修饰Cs₃Bi₂I₉自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478.

HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI₃ Modified Cs₃Bi₂I₉[J].Chinese Journal of Luminescence,2023,44(08):1471-1478.
韩鹏,刘鹤,国凤云等.BiI₃修饰Cs₃Bi₂I₉自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478. DOI： 10.37188/CJL.20230063.

HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI₃ Modified Cs₃Bi₂I₉[J].Chinese Journal of Luminescence,2023,44(08):1471-1478. DOI： 10.37188/CJL.20230063.

摘要

在溶液法合成Cs,3,Bi,2,I,9,前驱体溶液的基础上，采用添加BiI,3,修饰Cs,3,Bi,2,I,9,溶液的方法后得到Cs,3,Bi,2,I,9,/BiI,3,薄膜并制备出具有自供能特性的Cs,3,Bi,2,I,9,/BiI,3,薄膜光电化学型探测器。结果表明，添加的BiI,3,以第二相形式存在于Cs,3,Bi,2,I,9,薄膜中，形成两相混合结构。在紫外光（365 nm）单色光照射下，Cs,3,Bi,2,I,9,/BiI,3,探测器的开关比达到3 198，响应度和探测率分别为2.85×10,-3, A/W和3.77×10,10, Jones。在绿光（530 nm）单色光照射下，Cs,3,Bi,2,I,9,/BiI,3,探测器的开关比达到1 172，响应度和探测率分别为6.9×10,-4, A/W和1.76×10,10, Jones，同时展现出红光波段（625 nm）的良好响应。相较于Cs,3,Bi,2,I,9,探测器，Cs,3,Bi,2,I,9,/BiI,3,器件探测性能均有大幅度提高，归因于BiI,3,对非辐射缺陷的钝化作用。本工作首次尝试将Cs,3,Bi,2,I,9,应用在光电化学型结构探测器中，通过BiI,3,的修饰成功提高了器件性能，为低毒铋基钙钛矿的光电探测应用性能提升提供了新思路。

Abstract

Based on the synthesis of Cs,3,Bi,2,I,9, precursor solution by using solution method， Cs,3,Bi,2,I,9,/BiI,3, thin films were obtained by adding BiI,3, to modify Cs,3,Bi,2,I,9, solution， and the Cs,3,Bi,2,I,9,/BiI,3, photodetectors based on the device types of photoelectrochemical detectors with self-powered properties were also constructed. It is found that the added BiI,3, exists in the form of the second phase， forming a two-phase mixed structure. Under illumination of ultraviolet（365 nm） monochromatic light， Cs,3,Bi,2,I,9,/BiI,3, photodetectors show on-off ratio of 3 198， corresponding to a response of 2.85×10,-3, A/W and a detectivity of 3.77×10,10, Jones. While under illumination of green light（530 nm）， the device also exhibits on-off ratio of 1 172， a response of 6.9×10,-4, A/W and a detectivity of 1.76×10,10, Jones. Compared with simple Cs,3,Bi,2,I,9, photodetectors， the detection performance of Cs,3,Bi,2,I,9,/BiI,3, photodetectors has been greatly improved， which is attributed to the passivation of BiI,3, on non-radiation defects. It is the first time to apply Cs,3,Bi,2,I,9, in the photoelectrochemical structure detector. The modification of BiI,3, successfully improves the device performance， which provides a new idea for improving the performance of low-toxic bismuth-based perovskite photodetection application.

关键词

Cs3Bi2I9光电化学型探测器自供能探测BiI3第二相

Keywords

Cs3Bi2I9photoelectrochemical detectorsself-powered detectionBiI3second phase

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