Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9

HAN Peng; LIU He; GUO Fengyun; GAO Shiyong; WANG Jinzhong; ZHANG Yong

doi:10.37188/CJL.20230063

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Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI₃ Modified Cs₃Bi₂I₉

Device Fabrication and Physics | 更新时间：2023-09-06

- Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI₃ Modified Cs₃Bi₂I₉
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 8, Pages: 1471-1478(2023)
- 作者机构：
  
  哈尔滨工业大学材料科学与工程学院，黑龙江哈尔滨　150001
- 作者简介：
- 基金信息：
  
  National Key R&D Program of China(2019YFA0705201)
- DOI：10.37188/CJL.20230063
  CLC： TN36
- Published：05 August 2023，
  
  Received：13 March 2023，
  
  Revised：02 April 2023，
- 稿件说明：
移动端阅览
韩鹏,刘鹤,国凤云等.BiI₃修饰Cs₃Bi₂I₉自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478.

HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI₃ Modified Cs₃Bi₂I₉[J].Chinese Journal of Luminescence,2023,44(08):1471-1478.
韩鹏,刘鹤,国凤云等.BiI₃修饰Cs₃Bi₂I₉自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478. DOI： 10.37188/CJL.20230063.

HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI₃ Modified Cs₃Bi₂I₉[J].Chinese Journal of Luminescence,2023,44(08):1471-1478. DOI： 10.37188/CJL.20230063.

摘要

在溶液法合成Cs

前驱体溶液的基础上，采用添加BiI

修饰Cs

溶液的方法后得到Cs

/BiI

薄膜并制备出具有自供能特性的Cs

/BiI

薄膜光电化学型探测器。结果表明，添加的BiI

以第二相形式存在于Cs

薄膜中，形成两相混合结构。在紫外光（365 nm）单色光照射下，Cs

/BiI

探测器的开关比达到3 198，响应度和探测率分别为2.85×10

-3

A/W和3.77×10

Jones。在绿光（530 nm）单色光照射下，Cs

/BiI

探测器的开关比达到1 172，响应度和探测率分别为6.9×10

-4

A/W和1.76×10

Jones，同时展现出红光波段（625 nm）的良好响应。相较于Cs

探测器，Cs

/BiI

器件探测性能均有大幅度提高，归因于BiI

对非辐射缺陷的钝化作用。本工作首次尝试将Cs

应用在光电化学型结构探测器中，通过BiI

的修饰成功提高了器件性能，为低毒铋基钙钛矿的光电探测应用性能提升提供了新思路。

Abstract

Based on the synthesis of Cs

precursor solution by using solution method， Cs

/BiI

thin films were obtained by adding BiI

to modify Cs

solution， and the Cs

/BiI

photodetectors based on the device types of photoelectrochemical detectors with self-powered properties were also constructed. It is found that the added BiI

exists in the form of the second phase， forming a two-phase mixed structure. Under illumination of ultraviolet（365 nm） monochromatic light， Cs

/BiI

photodetectors show on-off ratio of 3 198， corresponding to a response of 2.85×10

-3

A/W and a detectivity of 3.77×10

Jones. While under illumination of green light（530 nm）， the device also exhibits on-off ratio of 1 172， a response of 6.9×10

-4

A/W and a detectivity of 1.76×10

Jones. Compared with simple Cs

photodetectors， the detection performance of Cs

/BiI

photodetectors has been greatly improved， which is attributed to the passivation of BiI

on non-radiation defects. It is the first time to apply Cs

in the photoelectrochemical structure detector. The modification of BiI

successfully improves the device performance， which provides a new idea for improving the performance of low-toxic bismuth-based perovskite photodetection application.

关键词

Cs3Bi2I9光电化学型探测器自供能探测BiI3第二相

Keywords

Cs3Bi2I9photoelectrochemical detectorsself-powered detectionBiI3second phase

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