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哈尔滨工业大学 材料科学与工程学院, 黑龙江 哈尔滨 150001
Received:13 March 2023,
Revised:02 April 2023,
Published:05 August 2023
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韩鹏,刘鹤,国凤云等.BiI3修饰Cs3Bi2I9自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478.
HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9[J].Chinese Journal of Luminescence,2023,44(08):1471-1478.
韩鹏,刘鹤,国凤云等.BiI3修饰Cs3Bi2I9自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478. DOI: 10.37188/CJL.20230063.
HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9[J].Chinese Journal of Luminescence,2023,44(08):1471-1478. DOI: 10.37188/CJL.20230063.
在溶液法合成Cs
3
Bi
2
I
9
前驱体溶液的基础上,采用添加BiI
3
修饰Cs
3
Bi
2
I
9
溶液的方法后得到Cs
3
Bi
2
I
9
/BiI
3
薄膜并制备出具有自供能特性的Cs
3
Bi
2
I
9
/BiI
3
薄膜光电化学型探测器。结果表明,添加的BiI
3
以第二相形式存在于Cs
3
Bi
2
I
9
薄膜中,形成两相混合结构。在紫外光(365 nm)单色光照射下,Cs
3
Bi
2
I
9
/BiI
3
探测器的开关比达到3 198,响应度和探测率分别为2.85×10
-3
A/W和3.77×10
10
Jones。在绿光(530 nm)单色光照射下,Cs
3
Bi
2
I
9
/BiI
3
探测器的开关比达到1 172,响应度和探测率分别为6.9×10
-4
A/W和1.76×10
10
Jones,同时展现出红光波段(625 nm)的良好响应。相较于Cs
3
Bi
2
I
9
探测器,Cs
3
Bi
2
I
9
/BiI
3
器件探测性能均有大幅度提高,归因于BiI
3
对非辐射缺陷的钝化作用。本工作首次尝试将Cs
3
Bi
2
I
9
应用在光电化学型结构探测器中,通过BiI
3
的修饰成功提高了器件性能,为低毒铋基钙钛矿的光电探测应用性能提升提供了新思路。
Based on the synthesis of Cs
3
Bi
2
I
9
precursor solution by using solution method, Cs
3
Bi
2
I
9
/BiI
3
thin films were obtained by adding BiI
3
to modify Cs
3
Bi
2
I
9
solution, and the Cs
3
Bi
2
I
9
/BiI
3
photodetectors based on the device types of photoelectrochemical detectors with self-powered properties were also constructed. It is found that the added BiI
3
exists in the form of the second phase, forming a two-phase mixed structure. Under illumination of ultraviolet(365 nm) monochromatic light, Cs
3
Bi
2
I
9
/BiI
3
photodetectors show on-off ratio of 3 198, corresponding to a response of 2.85×10
-3
A/W and a detectivity of 3.77×10
10
Jones. While under illumination of green light(530 nm), the device also exhibits on-off ratio of 1 172, a response of 6.9×10
-4
A/W and a detectivity of 1.76×10
10
Jones. Compared with simple Cs
3
Bi
2
I
9
photodetectors, the detection performance of Cs
3
Bi
2
I
9
/BiI
3
photodetectors has been greatly improved, which is attributed to the passivation of BiI
3
on non-radiation defects. It is the first time to apply Cs
3
Bi
2
I
9
in the photoelectrochemical structure detector. The modification of BiI
3
successfully improves the device performance, which provides a new idea for improving the performance of low-toxic bismuth-based perovskite photodetection application.
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