浏览全部资源
扫码关注微信
- About Journal
- Articles Online
- Authors
- Reviewers
Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9
增强出版- Chinese Journal of Luminescence Vol. 44, Issue 8, Pages: 1471-1478(2023)
- 作者机构：
哈尔滨工业大学 材料科学与工程学院， 黑龙江 哈尔滨 150001
- 作者简介：
- 基金信息：National Key R&D Program of China(2019YFA0705201)
DOI：10.37188/CJL.20230063
CLC： TN36Published：05 August 2023，
Received：13 March 2023，
Revised：02 April 2023，
扫 描 看 全 文
韩鹏,刘鹤,国凤云等.BiI3修饰Cs3Bi2I9自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478.
HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9[J].Chinese Journal of Luminescence,2023,44(08):1471-1478.
韩鹏,刘鹤,国凤云等.BiI3修饰Cs3Bi2I9自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478. DOI： 10.37188/CJL.20230063.
HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9[J].Chinese Journal of Luminescence,2023,44(08):1471-1478. DOI： 10.37188/CJL.20230063.
摘要
在溶液法合成Cs
3
Bi
2
I
9
前驱体溶液的基础上，采用添加BiI
3
修饰Cs
3
Bi
2
I
9
溶液的方法后得到Cs
3
Bi
2
I
9
/BiI
3
薄膜并制备出具有自供能特性的Cs
3
Bi
2
I
9
/BiI
3
薄膜光电化学型探测器。结果表明，添加的BiI
3
以第二相形式存在于Cs
3
Bi
2
I
9
薄膜中，形成两相混合结构。在紫外光（365 nm）单色光照射下，Cs
3
Bi
2
I
9
/BiI
3
探测器的开关比达到3 198，响应度和探测率分别为2.85×10
-3
A/W和3.77×10
10
Jones。在绿光（530 nm）单色光照射下，Cs
3
Bi
2
I
9
/BiI
3
探测器的开关比达到1 172，响应度和探测率分别为6.9×10
-4
A/W和1.76×10
10
Jones，同时展现出红光波段（625 nm）的良好响应。相较于Cs
3
Bi
2
I
9
探测器，Cs
3
Bi
2
I
9
/BiI
3
器件探测性能均有大幅度提高，归因于BiI
3
对非辐射缺陷的钝化作用。本工作首次尝试将Cs
3
Bi
2
I
9
应用在光电化学型结构探测器中，通过BiI
3
的修饰成功提高了器件性能，为低毒铋基钙钛矿的光电探测应用性能提升提供了新思路。
Abstract
Based on the synthesis of Cs
3
Bi
2
I
9
precursor solution by using solution method， Cs
3
Bi
2
I
9
/BiI
3
thin films were obtained by adding BiI
3
to modify Cs
3
Bi
2
I
9
solution， and the Cs
3
Bi
2
I
9
/BiI
3
photodetectors based on the device types of photoelectrochemical detectors with self-powered properties were also constructed. It is found that the added BiI
3
exists in the form of the second phase， forming a two-phase mixed structure. Under illumination of ultraviolet（365 nm） monochromatic light， Cs
3
Bi
2
I
9
/BiI
3
photodetectors show on-off ratio of 3 198， corresponding to a response of 2.85×10
-3
A/W and a detectivity of 3.77×10
10
Jones. While under illumination of green light（530 nm）， the device also exhibits on-off ratio of 1 172， a response of 6.9×10
-4
A/W and a detectivity of 1.76×10
10
Jones. Compared with simple Cs
3
Bi
2
I
9
photodetectors， the detection performance of Cs
3
Bi
2
I
9
/BiI
3
photodetectors has been greatly improved， which is attributed to the passivation of BiI
3
on non-radiation defects. It is the first time to apply Cs
3
Bi
2
I
9
in the photoelectrochemical structure detector. The modification of BiI
3
successfully improves the device performance， which provides a new idea for improving the performance of low-toxic bismuth-based perovskite photodetection application.
关键词
Cs3Bi2I9光电化学型探测器自供能探测BiI3第二相
Keywords
Cs3Bi2I9photoelectrochemical detectorsself-powered detectionBiI3second phase
references
GUAN H Y， MAO G J， ZHONG T Y， et al. A self-powered UV photodetector based on the hydrovoltaic and photoelectric coupling properties of ZnO nanowire arrays ［J］. J. Alloys Compd.， 2021， 867： 159073-1-8. doi: 10.1016/j.jallcom.2021.159073http://dx.doi.org/10.1016/j.jallcom.2021.159073
YANG L， TSAI W L， LI C S， et al. High-quality conformal homogeneous all-vacuum deposited CsPbCl3 thin films and their UV photodiode applications ［J］. ACS Appl. Mater. Interfaces， 2019， 11（50）： 47054-47062. doi: 10.1021/acsami.9b16264http://dx.doi.org/10.1021/acsami.9b16264
LI W J， LIU Y J， GAO Y X， et al. Tunneling-assisted highly sensitive and stable lead-free Cs3Bi2I9 perovskite photodetectors for diffuse reflection imaging ［J］. J. Mater. Chem. C， 2021， 9（3）： 1008-1013. doi: 10.1039/d0tc04485ghttp://dx.doi.org/10.1039/d0tc04485g
ISMAIL R A， ALWAN A M， AHMED A S. Preparation and characteristics study of nano-porous silicon UV photodetector ［J］. Appl. Nanosc.， 2017， 7（1-2）： 9-15. doi: 10.1007/s13204-016-0544-9http://dx.doi.org/10.1007/s13204-016-0544-9
HU W， CONG H， HUANG W， et al. Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band ［J］. Light Sci. Appl.， 2019， 8： 106-1-10. doi: 10.1038/s41377-019-0218-yhttp://dx.doi.org/10.1038/s41377-019-0218-y
方向明， 容萍， 任帅， 等. g-C3N4/Bi2S3复合材料宽光谱光电探测器制备及其性能研究 ［J］. 光子学报， 2022， 51（2）： 0251216-1-7.
FANG X M， RONG P， REN S， et al. Preparation and performance of g-C3N4/Bi2S3 composite broad-band photodetector ［J］. Acta Photon. Sinica， 2022， 51（2）： 0251216-1-7. （in Chinese）
LEE Y H， SONG I， KIM S H， et al. Perovskite granular wire photodetectors with ultrahigh photodetectivity ［J］. Adv. Mater.， 2020， 32（32）： 2002357-1-10. doi: 10.1002/adma.202002357http://dx.doi.org/10.1002/adma.202002357
KHAZAEE M， SARDASHTI K， SUN J P， et al. A versatile thin-film deposition method for multidimensional semiconducting bismuth halides ［J］. Chem. Mater.， 2018， 30（10）： 3538-3544. doi: 10.1021/acs.chemmater.8b01341http://dx.doi.org/10.1021/acs.chemmater.8b01341
ZHANG Y J， PATHAK R， ZHENG D P， et al. Synthesis of cesium bismuth iodide perovskite using toluene as anti-solvent with higher photocurrent response ［J］. Mater. Lett.， 2022， 310： 131514-1-4. doi: 10.1016/j.matlet.2021.131514http://dx.doi.org/10.1016/j.matlet.2021.131514
PARK B W， PHILIPPE B， ZHANG X L， et al. Bismuth based hybrid perovskites A3Bi2I9 （a： methylammonium or cesium） for solar cell application ［J］. Adv. Mater.， 2015， 27（43）： 6806-6813. doi: 10.1002/adma.201501978http://dx.doi.org/10.1002/adma.201501978
BAI F， HU Y H， HU Y Q， et al. Lead-free， air-stable ultrathin Cs3Bi2I9 perovskite nanosheets for solar cells ［J］. Solar Energy Mater. Solar Cells， 2018， 184： 15-21. doi: 10.1016/j.solmat.2018.04.032http://dx.doi.org/10.1016/j.solmat.2018.04.032
ZHANG Y X， LIU Y C， XU Z， et al. Nucleation-controlled growth of superior lead-free perovskite Cs3Bi2I9 single-crystals for high-performance X-ray detection ［J］. Nat. Commun.， 2020， 11（1）： 2304-1-11. doi: 10.1038/s41467-020-16034-whttp://dx.doi.org/10.1038/s41467-020-16034-w
WANG J H， LI Y， MA L， et al. Air-stabilized lead-free hexagonal Cs3Bi2I9 nanocrystals for ultrahigh-performance optical detection ［J］. Adv. Funct. Mater.， 2022， 32（30）： 2203072. doi: 10.1002/adfm.202203072http://dx.doi.org/10.1002/adfm.202203072
LI L J， YE G， LUO T Y， et al. Centimeter-sized stable zero-dimensional Cs3Bi2I9 single crystal for mid-infrared lead-free perovskite photodetector ［J］. J. Phys. Chem. C， 2022， 126（7）： 3646-3652. doi: 10.1021/acs.jpcc.1c08815http://dx.doi.org/10.1021/acs.jpcc.1c08815
GHOSH B， WU B， MULMUDI H K， et al. Limitations of Cs3Bi2I9 as lead-free photovoltaic absorber materials ［J］. ACS Appl. Mater. Interfaces， 2018， 10（41）： 35000-35007. doi: 10.1021/acsami.7b14735http://dx.doi.org/10.1021/acsami.7b14735
WU T， WANG D Z， LU Y， et al. Multifunctional perylenediimide-based cathode interfacial materials for high-performance inverted perovskite solar cells ［J］. ACS Appl. Energy Mater.， 2021， 4（12）： 13657-13665. doi: 10.1021/acsaem.1c02339http://dx.doi.org/10.1021/acsaem.1c02339
WU T， WANG D Z， JIANG X J， et al. Molecular regulation of perylenediimide and fluorene-based cathode interfacial materials for efficient inverted perovskite solar cells ［J］. Adv. Mater. Interfaces， 2022， 9（28）： 2200923-1-9. doi: 10.1002/admi.202200923http://dx.doi.org/10.1002/admi.202200923
BOOPATHI K M， RAMAN S， MOHANRAMAN R， et al. Solution-processable bismuth iodide nanosheets as hole transport layers for organic solar cells ［J］. Solar Energy Mater. Solar Cells， 2014， 121： 35-41. doi: 10.1016/j.solmat.2013.10.031http://dx.doi.org/10.1016/j.solmat.2013.10.031
JOHANSSON M B， ZHU H M， JOHANSSON E M J. Extended photo-conversion spectrum in low-toxic bismuth halide perovskite solar cells ［J］. J. Phys. Chem. Lett.， 2016， 7（17）： 3467-3471. doi: 10.1021/acs.jpclett.6b01452http://dx.doi.org/10.1021/acs.jpclett.6b01452
ZHANG H J， XU Y D， SUN Q H， et al. Lead free halide perovskite Cs3Bi2I9 bulk crystals grown by a low temperature solution method ［J］. CrystEngComm， 2018， 20（34）： 4935-4941. doi: 10.1039/c8ce00925bhttp://dx.doi.org/10.1039/c8ce00925b
0
Views
74
下载量
0
CSCD
- L-PDFDownload
- WORDDownload
- Meta-XMLDownload
- BibTeXDownload
- EndnoteDownload
- RefMan Download
- NoteExpressDownload
- NoteFirstDownload
Publicity Resources
Related Articles
Related Author
Related Institution
- Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
- Tel：0431-86176862 Email：fgxbt@126.com
- Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17
京公网安备11010802024621 - It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
- Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
