Optimization and Research Progress of QLED Performance Based on Metal Oxide Functional Layer

SU Meiqi; ZHANG Dandan

doi:10.37188/CJL.20230016

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Optimization and Research Progress of QLED Performance Based on Metal Oxide Functional Layer

Device Fabrication and Physics | 更新时间：2023-09-06

- Optimization and Research Progress of QLED Performance Based on Metal Oxide Functional Layer
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 8, Pages: 1439-1450(2023)
- 作者机构：
  
  1.北京信息科技大学仪器科学与光电工程学院，北京　100192
- 作者简介：
- 基金信息：
  
  Beijing Municipal Natural Science Foundation(4222067)
- DOI：10.37188/CJL.20230016
  CLC：
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SU Meiqi, ZHANG Dandan. Optimization and Research Progress of QLED Performance Based on Metal Oxide Functional Layer. [J]. Chinese Journal of Luminescence 44(8):1439-1450(2023)
DOI：

SU Meiqi, ZHANG Dandan. Optimization and Research Progress of QLED Performance Based on Metal Oxide Functional Layer. [J]. Chinese Journal of Luminescence 44(8):1439-1450(2023) DOI： 10.37188/CJL.20230016.

摘要

由于金属氧化物具有较好的热稳定性以及对水/氧的敏感性较低，因此被作为最重要的电荷传输材料应用于量子点发光二极管（QLED）器件中。然而，不同金属氧化物的电荷传输能力不同，并且在不同的器件结构中界面能级匹配问题等因素会使得电荷失衡，甚至引发激子猝灭。因此在保证材料稳定性的同时，要得到良好的器件性能就要对其进行界面修饰和优化。本文以金属氧化物作为电荷传输层、电荷注入层以及电荷阻挡层分别进行阐述，通过混入其他材料以及构建合理的器件结构等方面综述了近些年金属氧化物在QLED应用中的发展历程。

Abstract

Because metal oxides have good thermal stability and low sensitivity to water/oxygen， they are used as the most important charge transfer materials in quantum dot light emitting diodes （QLED） devices. However， the charge transfer ability of different metal oxides is different， and the interface energy level matching problem in different device structures will cause the charge imbalance and even lead to exciton quenching. Therefore， in order to obtain good device performance， it is necessary to modify and optimize the interface while ensuring the stability of the material. In this paper， metal oxides as charge transport layer， charge injection layer and charge blocking layer are described respectively， and the development of metal oxides in QLED applications in recent years is summarized by mixing other materials and constructing reasonable device structures.

关键词

金属氧化物电荷传输层电荷注入层电荷阻挡层复合界面功能层

Keywords

metallic oxidecharge transfer layercharge injection layercharge barrier layercomposite interface function layer

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