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Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode
Luminescence Industry and Technology Frontier | 更新时间:2023-06-15
    • Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode

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    • Chinese Journal of Luminescence   Vol. 44, Issue 5, Pages: 898-903(2023)
    • DOI:10.37188/CJL.20220385    

      CLC: TN312.8
    • Published:05 May 2023

      Received:07 November 2022

      Revised:25 November 2022

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  • WANG Xue,LIU Naixin,WANG Bing,et al.Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode[J].Chinese Journal of Luminescence,2023,44(05):898-903. DOI: 10.37188/CJL.20220385.

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