Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode

WANG Xue; LIU Naixin; WANG Bing; GUO Yanan; ZHANG Xiaona; GUO Kai; LI Yongqiang; ZHANG Tong; YAN Jianchang; LI Jinmin

doi:10.37188/CJL.20220385

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Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode

Luminescence Industry and Technology Frontier | 更新时间：2023-06-15

- Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 5, Pages: 898-903(2023)
- 作者机构：
  
  1.山西中科潞安紫外光电科技有限公司，山西长治　046000
  2.中国科学院半导体研究所半导体照明技术研究开发中心，北京　100083
- 作者简介：
- 基金信息：
- DOI：10.37188/CJL.20220385
  CLC： TN312.8
- Received：07 November 2022，
  
  Revised：25 November 2022，
  
  Published：05 May 2023
- 稿件说明：
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王雪,刘乃鑫,王兵等.AlGaN基深紫外LED的NiAu透明电极及其接触特性[J].发光学报,2023,44(05):898-903.

WANG Xue,LIU Naixin,WANG Bing,et al.Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode[J].Chinese Journal of Luminescence,2023,44(05):898-903.
王雪,刘乃鑫,王兵等.AlGaN基深紫外LED的NiAu透明电极及其接触特性[J].发光学报,2023,44(05):898-903. DOI： 10.37188/CJL.20220385.

WANG Xue,LIU Naixin,WANG Bing,et al.Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode[J].Chinese Journal of Luminescence,2023,44(05):898-903. DOI： 10.37188/CJL.20220385.

摘要

在p⁃AlGaN表面沉积Ni/Au/Ni/Au透明电极体系，通过传输线模型测试，研究了退火温度对Ni/Au/Ni/Au与p⁃AlGaN材料接触特性的影响。结果表明，AlGaN基深紫外LED采用Ni/Au/Ni/Au金属体系，在600 ℃空气氛围下退火3 min形成p型半导体材料NiO。进一步优化Ni/Au/Ni/Au体系金属厚度，当Ni/Au/Ni/Au各层厚度由20/20/20/20 nm减薄至2/2/5/5 nm，并在600 ℃空气氛围退火3 min，其与p⁃AlGaN材料的接触电阻率从3.23×10

-1

Ω·cm

降到2.58×10

-4

Ω·cm

。采用上述优化的Ni/Au/Ni/Au体系制备的深紫外LED器件，器件光电特性得到了改善。在150 mA驱动下工作电压低至5.8 V；通过提升电极透过率，光输出功率提升18.9%。

Abstract

A Ni/Au/Ni/Au transparent electrode system was deposited on the surface of p-AlGaN， and the effects of annealing temperature on the contact characteristics of Ni/Au/Ni/Au with p-AlGaN were studied by transmission line model. When the AlGaN-based deep ultraviolet LED adopted Ni/Au/Ni/Au metal system， meanwhile annealed at 600 ℃ for 3 min， the results show that p-type semiconductor material NiO can be formed in the contact interface. The metal thickness of Ni/Au/Ni/Au system was further optimized. When the Ni/Au/Ni/Au layers were thinned from 20/20/20/20 nm to 2/2/5/5 nm，with the annealing condition at 600 ℃ for 3 min， the specific contact resistivity decreased from 3.23×10

-1

Ω·cm

to 2.58×10

-4

Ω·cm

. Using the above optimized Ni/Au/Ni/Au system into LED chip process， the photoelectric characteristics of the LED device can be improved drastically. The operating voltage was reduced to 5.8 V at 150 mA， as the increase of the electrode transmittance， the optical output power was increased by 18.9% at the same current.

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references

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