您当前的位置:
首页 >
文章列表页 >
Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode
Luminescence Industry and Technology Frontier | 更新时间:2023-06-15
    • Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode

      增强出版
    • Chinese Journal of Luminescence   Vol. 44, Issue 5, Pages: 898-903(2023)
    • DOI:10.37188/CJL.20220385    

      CLC:

    扫 描 看 全 文

  • WANG Xue,LIU Naixin,WANG Bing,et al.Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode[J].Chinese Journal of Luminescence,2023,44(05):898-903. DOI: 10.37188/CJL.20220385.

  •  

0

Views

48

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Performance Enhancement of AlGaN-based Deep-ultraviolet Light Emitting Diodes by Employing Irregular H-shaped Quantum Barriers
Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate
270/290/330 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes with Different Al Content in Quantum Wells and Barriers
Emission Mechanism of High Al-content AlGaN Multiple Quantum Wells

Related Author

No data

Related Institution

Advanced Ultraviolet Optoelectronics Co., Ltd
School of Foreign Studies, Anhui Polytechnic University
Research Center for Wide Gap Semiconductor, School of Physics, Peking University
School of Electrical Engineering, Anhui Polytechnic University
Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment, Ministry of Education, Anhui Polytechnic University
0