An Ultra-thin Vertical Deep Ultraviolet LED Realized by Epilayer Transfer

YAN Jiabin; SUN Zhihang; FANG Li; WANG Linning; WANG Yongjin

doi:10.37188/CJL.20220305

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An Ultra-thin Vertical Deep Ultraviolet LED Realized by Epilayer Transfer

Device Fabrication and Physics | 更新时间：2023-03-13

- An Ultra-thin Vertical Deep Ultraviolet LED Realized by Epilayer Transfer
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 2, Pages: 321-327(2023)
- 作者机构：
  
  1.南京邮电大学彼得·格林贝格尔研究中心，江苏南京　210003
- 作者简介：
- 基金信息：
  
  the National Natural Science Foundation of China(62004103);the Natural Science Foundation of Jiangsu Province(20KJB510019);the Foundation of Jiangsu Provincial Double-Innovation Doctor Program(CZ002SC20021)
- DOI：10.37188/CJL.20220305
  CLC：
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YAN Jiabin, SUN Zhihang, FANG Li, et al. An Ultra-thin Vertical Deep Ultraviolet LED Realized by Epilayer Transfer. [J]. Chinese Journal of Luminescence 44(2):321-327(2023)
DOI：

YAN Jiabin, SUN Zhihang, FANG Li, et al. An Ultra-thin Vertical Deep Ultraviolet LED Realized by Epilayer Transfer. [J]. Chinese Journal of Luminescence 44(2):321-327(2023) DOI： 10.37188/CJL.20220305.

摘要

AlGaN 基深紫外（Deep ultraviolet，DUV）发光二极管（Light⁃emitting diode，LED）可用于杀菌、水体净化、光疗、固化、传感和非视距通信等场合，在生物、环境、工业、医疗和军事等领域具有广阔的应用前景。针对现阶段 DUV LED 外量子效率较低的问题，本文提出了一种超薄垂直结构的 DUV LED 方案。该方案基于蓝宝石‐硅晶圆键合和物理减薄工艺实现了高质量 DUV LED 外延层从蓝宝石衬底到高导热硅基板的转移，并采用转移后亚微米厚度的超薄外延层制备出垂直结构的 AlGaN DUV LED。器件的出光面在减薄工艺后无需特殊的化学处理便可实现纳米级的粗化，配合超薄外延层结构具备显著的失谐微腔效应，有助于破坏高阶波导模式，从而增加 TM 波的出光并提升器件的出光效率。测试表明，转移后的外延层厚度约为 710 nm，制备出的 DUV LED 发光光谱峰值波长约为 271 nm。该垂直结构 DUV LED 制备方案为实现高效 DUV 光源提供了可行路径。

Abstract

AlGaN-based deep ultraviolet（DUV） light-emitting diodes（LEDs） are deemed as the alternative of traditional mercury lamp used for sterilization， water purification， phototherapy， polymer curing， sensing， and non-line-of-sight communication， which own broad application prospects in biological， environmental， industrial， medical， and military fields. To improve the low external quantum efficiency of DUV LEDs， this work proposes a DUV LED scheme with ultra-thin vertical structure. Based on the sapphire-silicon wafer bonding and physical thinning processes， high-quality DUV LED epitaxial layers are transferred from sapphire substrate to high thermal conductivity silicon substrate. Subsequently the fabrication of DUV LED is successfully realized using the ultra-thin epitaxial layers. The light-emitting surface of the device can be roughened at the nanometer level without special chemical treatment after the thinning process. The combination of rough surface and ultra-thin epitaxial layers have serious detuned micro-cavity effect， which helps to destroy the high-order waveguide mode， thereby increasing the light extraction efficiency. The measured thickness of the epitaxial layers after transfer is about 710 nm. The peak wavelength of the fabricated DUV LED electroluminescent spectrum is about 271 nm. The vertical DUV LED fabrication scheme provides a feasible path for realizing a high-efficiency DUV light source.

关键词

深紫外发光二极管外延层转移晶圆键合减薄工艺

Keywords

DUV LEDepilayer transferwafer bondingthinning process

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