Quantum-dot Light-emitting Diodes Based on Inorganic Charge-generation Layer

ZHAN Sheng; LIU Jia-tian; ZHANG Han-zhuang; JI Wen-yu

doi:10.37188/CJL.20220240

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Quantum-dot Light-emitting Diodes Based on Inorganic Charge-generation Layer

Cover Story | 更新时间：2023-10-27

- Quantum-dot Light-emitting Diodes Based on Inorganic Charge-generation Layer
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 10, Pages: 1469-1477(2022)
- 作者机构：
  
  吉林大学物理学院，吉林长春　130012
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(11974141)
- DOI：10.37188/CJL.20220240
  CLC： TN383⁺.1
- Published：05 October 2022，
  
  Received：16 June 2022，
  
  Revised：05 July 2022，
- 稿件说明：
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战胜,刘佳田,张汉壮等.基于无机电荷产生层的量子点电致发光器件[J].发光学报,2022,43(10):1469-147710.37188/CJL.20220240.

ZHAN Sheng,LIU Jia-tian,ZHANG Han-zhuang,et al.Quantum-dot Light-emitting Diodes Based on Inorganic Charge-generation Layer[J].Chinese Journal of Luminescence,2022,43(10):1469-147710.37188/CJL.20220240.
战胜,刘佳田,张汉壮等.基于无机电荷产生层的量子点电致发光器件[J].发光学报,2022,43(10):1469-147710.37188/CJL.20220240. DOI：

ZHAN Sheng,LIU Jia-tian,ZHANG Han-zhuang,et al.Quantum-dot Light-emitting Diodes Based on Inorganic Charge-generation Layer[J].Chinese Journal of Luminescence,2022,43(10):1469-147710.37188/CJL.20220240. DOI：

摘要

利用WO

/ZnO作为电荷产生层（CGL）制备了具有倒置结构的量子点电致发光器件（QLED），相比于传统的基于单层ZnO作为电子传输层的QLED，利用CGL‐QLED的电流效率提高了近30%。这主要归因于CGL的电子注入具有电场依赖特性，从而使得器件中的电荷注入更加平衡，提高了激子的形成效率，抑制了载流子导致的猝灭过程。此外，我们通过瞬态电致发光光谱技术及电容特性测试，分析了基于CGL的QLED的器件工作机制，发现CGL中可以存储大量的载流子，从而使得器件在脉冲电压驱动时出现发光过冲现象。其环境稳定性也与常规的基于ZnO的器件一致。而由于CGL独特的电荷产生机制，使得其不依赖于电极功函数特性。我们相信，这种器件结构在改善器件稳定性及良率方面有着巨大潜力。

Abstract

Quantum-dot light-emitting diodes（QLEDs）are fabricated by employing an inorganic charge-generation layer（CGL） consisting of WO

/ZnO instead of commonly used ZnO electron-transport layer. The performance of CGL based QLED is increased by around 30% compared with the device with ZnO as the electron-transport layer， which is attributed to the electrical field-dependent charge injection of CGL， resulting in more balanced charge injection and efficient exciton formation. Moreover， the emission quenching processes induced by charges are also reduced. The working mechanism of CGL based QLEDs is unraveled by transient electroluminescence spectrum and capacitance measurements. We find that the CGL can act as a charge reservoir， which is the origin of electroluminescence overshoot at the rising edge of transient electroluminescence response. Additionally， the shelf lifetime of CGL-QLEDs is identical with or even better than the normal ZnO based devices. Considering the charge injection of CGL is independent on the work function of electrodes， we believe the device structure proposed in this work has great potential to improve device stability and yield.

关键词

量子点发光器件电荷产生层过冲电荷存储

Keywords

quantum-dot light-emitting diodescharge-generation layerovershootcharge storage

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