Green InP Quantum Dot Light‑emitting Diode with PVK Blend in Emitting Layer

LIU Sen-kun; LUO Yu; WANG Jun-jie; GUO Biao; XIAO Yi; WANG Pu; PENG Jun-biao

doi:10.37188/CJL.20220086

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Green InP Quantum Dot Light‑emitting Diode with PVK Blend in Emitting Layer

Device Fabrication and Physics | 更新时间：2022-10-19

- Green InP Quantum Dot Light‑emitting Diode with PVK Blend in Emitting Layer
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 6, Pages: 891-900(2022)
- 作者机构：
  
  华南理工大学发光材料与器件国家重点实验室，广东广州 510641
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(51521002;62074059);Science and Technology Project of Guangdong Province(2019B030302007;2019B010934001)
- DOI：10.37188/CJL.20220086
  CLC： TN312.8;O482.31
- Published：05 June 2022，
  
  Received：14 March 2022，
  
  Revised：29 March 2022，
- 稿件说明：
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刘森坤,罗宇,王俊杰等.掺杂聚乙烯咔唑绿光磷化铟量子点发光二极管[J].发光学报,2022,43(06):891-900.

LIU Sen-kun,LUO Yu,WANG Jun-jie,et al.Green InP Quantum Dot Light‑emitting Diode with PVK Blend in Emitting Layer[J].Chinese Journal of Luminescence,2022,43(06):891-900.
刘森坤,罗宇,王俊杰等.掺杂聚乙烯咔唑绿光磷化铟量子点发光二极管[J].发光学报,2022,43(06):891-900. DOI： 10.37188/CJL.20220086.

LIU Sen-kun,LUO Yu,WANG Jun-jie,et al.Green InP Quantum Dot Light‑emitting Diode with PVK Blend in Emitting Layer[J].Chinese Journal of Luminescence,2022,43(06):891-900. DOI： 10.37188/CJL.20220086.

摘要

设计了空穴传输材料聚乙烯基咔唑（PVK）与绿光无镉磷化铟（InP）量子点共混体系，改善了量子点团聚效应，减少了量子点之间相互作用产生的非辐射Förster能量转移（FRET），提高了共混无镉量子点薄膜的光致发光效率（PLQY），从24.2%提升至30.1%。同时，PVK的掺入提高了共混发光薄膜的空穴传输性能，改善了量子点电致发光器件的载流子平衡，使器件的最大外量子效率（EQE）达到5.94%，较未掺杂器件提高了32%。该聚合物掺杂方法可为研制高性能绿光InP量子点发光二极管提供参考。

Abstract

A hybrid system of polyvinylcarbazole（PVK） and green indium phosphide（InP） quantum dots was designed to produce efficient light-emitting diodes（LEDs）. PVK functions as not only disperse quantum dots well and reduce agglomeration， but also significantly reduce non-radiative Förster energy transfer（FRET） among quantum dots， and improve the film’s photoluminescence efficiency（PLQY） from 24.2% to 30.1%. Meanwhile， the incorporation of PVK can improve the hole transport performance of the QD film

via

the carrier balance of the devices， making the maximum external quantum efficiency（EQE） of the devices reach 5.94%， which is 32% higher than that of the devices without PVK. This method can provide a reference for the development of high performance green InP QD-LEDs.

关键词

磷化铟量子点聚合物掺杂能量转移载流子平衡

Keywords

InP quantum dotpolymer blendenergy transfercharge balance

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