Influence of Different O2 or N2 Plasma Powers to TiN<italic style="font-style: italic">x</italic> Anode Surface on OLEDs-on Silicon Performance

LI Xiang; LIU Hai; WEI Bin; ZHANG Jian-hua

doi:10.37188/CJL.20220046

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Influence of Different O₂ or N₂Plasma Powers to TiN_x Anode Surface on OLEDs-on Silicon Performance

Luminescence Industry and Technology Frontier | 更新时间：2022-10-19

- Influence of Different O₂ or N₂Plasma Powers to TiN_x Anode Surface on OLEDs-on Silicon Performance
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 6, Pages: 934-943(2022)
- 作者机构：
  
  1.上海大学材料科学与工程学院，上海　200444
  2.上海大学新型显示技术及应用集成教育部重点实验室，上海　200072
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(51725505);Shanghai Science and Technology Commission(18JC1410402;15JC1402000);The Open Fund of Key Laboratory of Advanced Display and System Applications of Ministry of Education
- DOI：10.37188/CJL.20220046
  CLC： TN383⁺.1
- Published：05 June 2022，
  
  Received：14 February 2022，
  
  Revised：06 March 2022，
- 稿件说明：
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李祥,刘海,魏斌等.不同功率O₂或N₂等离子处理TiN_x阳极表面对硅基OLED发光性能的影响[J].发光学报,2022,43(06):934-943.

LI Xiang,LIU Hai,WEI Bin,et al.Influence of Different O₂ or N₂Plasma Powers to TiN_x Anode Surface on OLEDs-on Silicon Performance[J].Chinese Journal of Luminescence,2022,43(06):934-943.
李祥,刘海,魏斌等.不同功率O₂或N₂等离子处理TiN_x阳极表面对硅基OLED发光性能的影响[J].发光学报,2022,43(06):934-943. DOI： 10.37188/CJL.20220046.

LI Xiang,LIU Hai,WEI Bin,et al.Influence of Different O₂ or N₂Plasma Powers to TiN_x Anode Surface on OLEDs-on Silicon Performance[J].Chinese Journal of Luminescence,2022,43(06):934-943. DOI： 10.37188/CJL.20220046.

摘要

硅基有机发光二极管是微显示领域的一个重要研究方向。本文以硅基微显示器件中阳极与有机层关键界面材料氮化钛为研究对象，通过研究不同条件的等离子处理引起的表面微结构形貌、功函数、载流子浓度、载流子迁移率、反射率以及X射线光电子能谱变化，探究有机发光性能的表面处理方法。结果显示，合适功率的等离子处理（O

：60 W或N

：80 W）能够显著提升硅基显示器件的发光亮度（O

：70%，N

：128%）；同时，电流效率和功率效率分别提高了35%和58%。通过比较各个参数，等离子处理改变的Ti和 N元素的价态被认为可提高界面载流子浓度和迁移率从而优化发光性能。该研究细化了一种新颖的硅基显示器件性能提升方法，为相关研究提供了方向。

Abstract

Organic light emitting diode on silicon is an important research topic in the microdisplay field. In the paper， we present a systematic study about the influence of plasma treatment to the titanium nitride， which is the key interface between the anode and organic layers. The changes of characteristic parameters， including the morphology of surface microstructure， work function， carrier concentration， carrier mobility， reflectance， and the X-ray photoelectron spectroscopy after plasma treatments， are summarized to optimize the performance of integrated organic light emitting diodes. The results show that the plasma treatment with appropriate power（60 W for O

or 80 W for N

） can significantly improve the luminance（70% for O

and 128% for N

） of display device on silicon. Meanwhile， the current and power efficiency are increased by 35% and 58%， respectively. It was revealed that the valence states of Ti and N are changed during the plasma treatment， which are considered to improve the interfacial carrier concentration and mobility for an enhanced luminescence performance. This study elaborates an approach to improve the performance of a typical microdisplay device on silicon and provides a guide for related researches.

关键词

等离子处理硅基OLED氮化钛载流子浓度及迁移率

Keywords

plasma treatmentorganic light emitting diode（OLED）-on silicontitanium nitridecarrier concentration and mobility

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⁰

Influence of Different O2 or N2 Plasma Powers to TiNx Anode Surface on OLEDs-on Silicon Performance

DOI：10.37188/CJL.20220046

摘要

Abstract

关键词

Keywords

references

Influence of Different O₂ or N₂Plasma Powers to TiN_x Anode Surface on OLEDs-on Silicon Performance