Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode

Xiao-juan DU; Jing LIU; Hai-liang DONG; Zhi-gang JIA; Ai-qin ZHANG; Jian LIANG; Bing-she XU

doi:10.37188/CJL.20220016

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Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode

Device Fabrication and Physics | 更新时间：2022-05-23

- Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 5, Pages: 773-785(2022)
- 作者机构：
  
  1.太原理工大学　材料科学与工程学院，山西　太原　030024
  2.航天科工防御技术研究试验中心，北京　100854
  3.太原理工大学　新材料界面科学与工程教育部重点实验室，山西　太原　030024
  4.太原理工大学　轻纺工程学院，山西　太原　030024
  5.陕西科技大学　材料原子·分子科学研究所，陕西　西安　710021
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61904120;21972103);National Key Research and Development Program of China(2016YFB0401803);The Basic Research Program of Shanxi Province(201901D111111)
- DOI：10.37188/CJL.20220016
  CLC： TN248.4
- Published：2022-05，
  
  Received：13 January 2022，
  
  Revised：11 February 2022，
- 稿件说明：
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XIAO-JUAN DU, JING LIU, HAI-LIANG DONG, et al. Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode. [J]. Chinese journal of luminescence, 2022, 43(5): 773-785.
DOI：

XIAO-JUAN DU, JING LIU, HAI-LIANG DONG, et al. Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode. [J]. Chinese journal of luminescence, 2022, 43(5): 773-785. DOI： 10.37188/CJL.20220016.

摘要

采用SiLENSe（Simulator of light emitters based on nitride semiconductors）软件仿真研究了Al

x-y

N电子阻挡层（EBL）Al组分渐变方式对GaN基激光二极管（LD）光电性能的影响，实现了提高输出功率和电光转换效率的目的。文中提出的四种Al组分渐变方式分别是传统均匀组分、右阶梯渐变组分（0~0.07~0.16）、三角形渐变组分（0~0.16~0）、左阶梯渐变组分（0.16~0.07~0）。结果表明，与传统均匀组分EBL结构相比，Al组分阶梯渐变Al

x-y

N EBL LD导带底的电子势垒显著提高，价带顶的空穴势垒降低。这主要是由于该结构能有效抑制电子泄漏和提高空穴注入效率，从而提高有源区载流子浓度，进而提高有源区辐射复合效率。当注入电流为0.48 A时，采用Al组分阶梯渐变Al

x-y

N EBL结构能将器件开启电压从5.1 V降至4.9 V，光学损耗从3.4 cm

-1

降至3.29 cm

-1

，从而使光输出功率从335 mW提高至352 mW，电光转换效率从12.5%提高至13.4%。此外，讨论了Al组分阶梯渐变EBL结构对GaN基蓝光LD光电性能的影响机制。该结构设计将为外延生长高功率GaN基LD提供实验数据和理论支撑。

Abstract

The influence of Al composition-graded of Al

x-y

N electron blocking layer(EBL) on the photoelectric performance of GaN-based laser diode was numerically investigated using SiLENSe(Simulator of light emitters based on nitride semiconductors) software to achieve high output power and high conversion efficiency. The four Al composition graded modes in this paper are traditional uniform composition

right step-graded composition(0-0.07-0.16)

triangle-graded composition(0-0.16-0)

and left-step graded composition(0.16-0.07-0) respectively. Comparing with the traditional homogeneous composition EBL

it was found that Al composition step-graded EBL not only could significantly enhance band offset of conduction band result in reducing the electron leakage

but also could decrease band offset of valence band in order to improve holes injection efficiency and enhance radiative recombination efficiency. This is mainly due to the fact that Al step-graded composition structure could effectively restrain the electron leakage to the p-side and improve holes injection efficiency

so as to increase the carrier concentration and radiation recombination in the active zone. The Al step-graded composition EBL could effectively reduce opening voltage from 5.1 V to 4.9 V and decrease optical loss from 3.4 cm

-1

to 3.29 cm

-1

thus the output power was increased from 335 mW to 352 mW and the conversion efficiency was increased from 12.5% to 13.4% respectively at the current density of 6 kA/cm

. In addition

the influence mechanism of Al step-graded composition EBL on the photoelectric performances of GaN-based laser diode was discussed. This structure will provide experimental data and theoretical support for the epitaxial growth of high-power GaN-based laser diode.

关键词

GaN基蓝光激光二极管电子阻挡层Al组分光电性能

Keywords

GaN-based blue laser diodeselectron blocking layerAl compositionphotoelectric performance

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