Wide-ridge Waveguide Distributed Feedback 1.06 μm Semiconductor Laser with Lateral Microstructure

Zhi-dong GUO; Jie FAN; Hai-zhu WANG; Yong-gang ZOU; Xiao-hui MA

doi:10.37188/CJL.20220009

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Wide-ridge Waveguide Distributed Feedback 1.06 μm Semiconductor Laser with Lateral Microstructure

Device Fabrication and Physics | 更新时间：2022-04-20

- Wide-ridge Waveguide Distributed Feedback 1.06 μm Semiconductor Laser with Lateral Microstructure
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 4, Pages: 583-590(2022)
- 作者机构：
  
  长春理工大学　高功率半导体激光国家重点实验室，吉林　长春　130022
- 作者简介：
- 基金信息：
  
  Jilin Science and Technology Development Plan(20210201030GX;20210201089GX)
- DOI：10.37188/CJL.20220009
  CLC： TN248.4
- Published：01 April 2022，
  
  Received：10 January 2022，
  
  Revised：25 January 2022，
扫描看全文
Zhi-dong GUO, Jie FAN, Hai-zhu WANG, et al. Wide-ridge Waveguide Distributed Feedback 1.06 μm Semiconductor Laser with Lateral Microstructure. [J]. Chinese Journal of Luminescence 43(4):583-590(2022)
DOI：

Zhi-dong GUO, Jie FAN, Hai-zhu WANG, et al. Wide-ridge Waveguide Distributed Feedback 1.06 μm Semiconductor Laser with Lateral Microstructure. [J]. Chinese Journal of Luminescence 43(4):583-590(2022) DOI： 10.37188/CJL.20220009.

摘要

为了改善宽脊波导半导体激光器侧模特性和光谱特性，提出了一种具有侧向微结构脊波导和高阶脊表面光栅的分布反馈半导体激光器。该激光器在宽脊波导的两侧刻蚀微结构区，基于各阶侧模光场分布不同的特性，增大了谐振腔内基侧模与高阶侧模的损耗差，消除了远场光斑“多瓣”现象并且输出功率有所提升；同时，借助高阶脊表面光栅，器件的线宽得到了进一步压窄。在脊波导宽度50 μm、腔长1 mm的情况下，与宽脊波导半导体激光器相比，制备的激光器件在0.6 A驱动电流下实现了对高阶侧模的抑制，输出功率、斜率效率、电光转换效率分别提升了16.4%、17.9%、15%，并且光谱特性得到了有效的改善，光谱线宽约为39 pm。

Abstract

In order to improve the lateral mode and spectral characteristics of wide ridge waveguide semiconductor laser

in this paper

a distributed feedback semiconductor laser with lateral microstructure ridge waveguide and high-order surface grating is proposed. In order to make the device have better lateral modes and narrow line width

two microstructure regions are introduced to both sides of the ridge waveguide. Due to the different optical field distribution of each order lateral modes

the introduction of microstructure regions increases the loss difference between the fundamental lateral mode and the higher-order lateral modes. Therefore

The "multilobe" phenomenon of far-field spot is eliminated

and the output power is improved. At the same time

with the help of high-order surface grating

the linewidth of the device is further narrowed. In the case of a ridge waveguide width of 50 μm and a cavity length of 1 mm

the high-order lateral modes are suppressed. The output power is increased by 16.4%

the slope efficiency is increased by 17.9%

the electro-optic conversion efficiency is increased by 15% and an output near the fundamental lateral mode at 0.6 A. Compared with the conventional semiconductor device

the spectral characteristics have been effectively improved

the spectral linewidth is about 39 pm.

关键词

半导体激光器侧向微结构高阶Bragg光栅侧向模式窄线宽远场光斑

Keywords

semiconductor laserhigh order Bragg gratinglateral microstructurelateral modenarrow line widthfar-field spot

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Related Institution

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State Key Laboratory of High Power Semiconductor Lasers， School of Physics， Changchun University of Science and Technology

State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences

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