Wide-ridge Waveguide Distributed Feedback 1.06 μm Semiconductor Laser with Lateral Microstructure

Zhi-dong GUO; Jie FAN; Hai-zhu WANG; Yong-gang ZOU; Xiao-hui MA

doi:10.37188/CJL.20220009

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Wide-ridge Waveguide Distributed Feedback 1.06 μm Semiconductor Laser with Lateral Microstructure

Device Fabrication and Physics | 更新时间：2022-04-20

- Wide-ridge Waveguide Distributed Feedback 1.06 μm Semiconductor Laser with Lateral Microstructure
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 4, Pages: 583-590(2022)
- 作者机构：
  
  长春理工大学　高功率半导体激光国家重点实验室，吉林　长春　130022
- 作者简介：
- 基金信息：
  
  Jilin Science and Technology Development Plan(20210201030GX;20210201089GX)
- DOI：10.37188/CJL.20220009
  CLC： TN248.4
- Published：01 April 2022，
  
  Received：10 January 2022，
  
  Revised：25 January 2022，
- 稿件说明：
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ZHI-DONG GUO, JIE FAN, HAI-ZHU WANG, et al. Wide-ridge Waveguide Distributed Feedback 1.06 μm Semiconductor Laser with Lateral Microstructure. [J]. Chinese journal of luminescence, 2022, 43(4): 583-590.
DOI：

ZHI-DONG GUO, JIE FAN, HAI-ZHU WANG, et al. Wide-ridge Waveguide Distributed Feedback 1.06 μm Semiconductor Laser with Lateral Microstructure. [J]. Chinese journal of luminescence, 2022, 43(4): 583-590. DOI： 10.37188/CJL.20220009.

摘要

为了改善宽脊波导半导体激光器侧模特性和光谱特性，提出了一种具有侧向微结构脊波导和高阶脊表面光栅的分布反馈半导体激光器。该激光器在宽脊波导的两侧刻蚀微结构区，基于各阶侧模光场分布不同的特性，增大了谐振腔内基侧模与高阶侧模的损耗差，消除了远场光斑“多瓣”现象并且输出功率有所提升；同时，借助高阶脊表面光栅，器件的线宽得到了进一步压窄。在脊波导宽度50 μm、腔长1 mm的情况下，与宽脊波导半导体激光器相比，制备的激光器件在0.6 A驱动电流下实现了对高阶侧模的抑制，输出功率、斜率效率、电光转换效率分别提升了16.4%、17.9%、15%，并且光谱特性得到了有效的改善，光谱线宽约为39 pm。

Abstract

In order to improve the lateral mode and spectral characteristics of wide ridge waveguide semiconductor laser

in this paper

a distributed feedback semiconductor laser with lateral microstructure ridge waveguide and high-order surface grating is proposed. In order to make the device have better lateral modes and narrow line width

two microstructure regions are introduced to both sides of the ridge waveguide. Due to the different optical field distribution of each order lateral modes

the introduction of microstructure regions increases the loss difference between the fundamental lateral mode and the higher-order lateral modes. Therefore

The "multilobe" phenomenon of far-field spot is eliminated

and the output power is improved. At the same time

with the help of high-order surface grating

the linewidth of the device is further narrowed. In the case of a ridge waveguide width of 50 μm and a cavity length of 1 mm

the high-order lateral modes are suppressed. The output power is increased by 16.4%

the slope efficiency is increased by 17.9%

the electro-optic conversion efficiency is increased by 15% and an output near the fundamental lateral mode at 0.6 A. Compared with the conventional semiconductor device

the spectral characteristics have been effectively improved

the spectral linewidth is about 39 pm.

关键词

半导体激光器侧向微结构高阶Bragg光栅侧向模式窄线宽远场光斑

Keywords

semiconductor laserhigh order Bragg gratinglateral microstructurelateral modenarrow line widthfar-field spot

references

王立军, 宁永强, 秦莉, 等. 大功率半导体激光器研究进展 [J]. 发光学报, 2015, 36(1):1-19.

WANG L J, NING Y Q, QIN L, et al. Development of high power diode laser [J]. Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)

王皓, 张瑞康, 陆丹, 等. 1.55-μm大功率高速直调半导体激光器阵列 [J]. 光学学报, 2019, 39(9):0914001-1-5.

WANG H, ZHANG R K, LU D, et al. 1.55-μm high-power high-speed directly modulated semiconductor laser array [J]. Acta Opt. Sinica, 2019, 39(9):0914001-1-5. (in Chinese)

杜维川, 康俊杰, 李弋, 等. 450 nm GaN基半导体激光器腔面反射率的优化 [J]. 光学学报, 2019, 39(6):0614002-1-4.

DU W C, KANG J J, LI Y, et al. Optimization of facet reflectivity of 450-nm GaN-based semiconductor lasers [J]. Acta Opt. Sinica, 2019, 39(6):0614002-1-4. (in Chinese)

周强, 刘金璐, 谷远辉, 等. 量子保密通信用增益开关半导体脉冲激光器 [J]. 中国激光, 2016, 43(5):0502005-1-6.

ZHOU Q, LIU J L, GU Y H, et al. Gain-switched semiconductor pulsed laser for quantum secure communication [J]. Chin. J. Laser, 2016, 43(5):0502005-1-6. (in Chinese)

SODNIK Z, FURCH B, LUTZ H. Optical intersatellitecommunication [J]. IEEE J. Sel. Top. Quantum Electron., 2010, 16(5):1051-1057.

ZHENG J S, SHI Y C, ZHANG Y S, et al. Monolithically integrated four-channel DFB semiconductor laser array with an equivalent-distributed coupling coefficient [J]. IEEE Photonics J., 2015, 7(3):2200509-1-9.

滕云杰, 宋延嵩, 佟首峰, 等. 基于飞艇平台激光通信系统的捕获性能研究 [J]. 光学学报, 2018, 38(6):0606005-1-14.

TENG Y J, SONG Y S, TONG S F, et al. Acquisition performance of laser communication system based on airship platform [J]. Acta Opt. Sinica, 2018, 38(6):0606005-1-14. (in Chinese)

FUNABASHI M, NASU H, MUKAIHARA T, et al. Recent advances in DFB lasers for ultradense WDM applications [J]. IEEE J. Sel. Top. Quantum Electron., 2004, 10(2):312-320.

HOFMANN R, WAGNER V, NEUNER M, et al. Optically pumped GaInN/GaN-DFB lasers:overgrown lasers and vertical modes [J]. Mater. Sci. Eng. B, 1999, 59(1-3):386-389.

DECKER J, CRUMP P, FRICKE J, et al. Narrow stripe broad area lasers with high order distributed feedback surface gratings [J]. IEEE Photonics Technol. Lett., 2014, 26(8):829-832.

WENZEL H, FRICKE J, DECKER J, et al. High-power distributed feedback lasers with surface gratings:theory and experiment [J]. IEEE J. Sel. Top. Quantum Electron., 2015, 21(6):352-358.

GAO F, QIN L, CHEN Y Y, et al. Study of gain-coupled distributed feedback laser based on highorder surface gain-coupled gratings [J]. Opt. Commun., 2018, 410:936-940.

MATTHEY R, GRUET F, AFFOLDERBACH C, et al. Development and spectral characterisation of ridge DFB laser diodes for Cs optical pumping at 894 nm [C]. 2016 European Frequency and Time Forum(EFTF), York, UK, 2016:1-4.

ZHU H L, XIA Y M, HE J J. Pattern dependence in high-speed Q-modulated distributed feedback laser [J]. Opt. Express, 2015, 23(9):11887-11897.

VIRTANEN H, HEIKKI T, UUSITALO M, et al. Narrow-linewidth 780-nm DFB lasers fabricated using nanoimprint lithography [J]. IEEE Photonics Technol. Lett., 2018, 30(1):51-54.

KANG J H, MARTENS M, WENZEL H, et al. Optically pumped DFB lasers based on GaN using 10th-order laterally coupled surface gratings [J]. IEEE Photonics Technol. Lett., 2017, 29(1):138-141.

HOLGUÍN-LERMA J A, NG T K, OOI B S. Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating [J]. Appl. Phys. Express, 2019, 12(4):042007-1-4.

CRUMP P, LEISHER P, MATSON T, et al. Control of optical mode distribution through etched microstructures for improved broad area laser performance [J]. Appl. Phys. Lett., 2008, 92(13):131113-1-3.

Rong J M, Xing E B, Zhang Y, et al. Low lateral divergence 2 μm InGaSb/AlGaAsSb broad-area quantum well lasers [J]. Opt. Express, 2016, 24(7):7246-7252.

MIAH M J, STROHMAIER S, URBAN G, et al. Beam quality improvement of high-power semiconductor lasers using laterally inhomogeneous waveguides [J]. Appl. Phys. Lett., 2018, 113(22):221107-1-5.

FAN J A, BELKIN M A, CAPASSOF , et al. Wide-ridge metal-metal terahertz quantum cascade lasers with high-order lateral mode suppression [J]. Appl. Phys. Lett., 2008, 92(3):031106-1-3.

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