Preparation of n-type β-Ga<sub>2</sub>O<sub>3</sub> Film with High Thickness by MOCVD

Zheng-da LI; Teng JIAO; Xin DONG; Zhao-ti DIAO; Wei CHEN

doi:10.37188/CJL.20210398

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Preparation of n-type β-Ga₂O₃ Film with High Thickness by MOCVD

Synthesis and Properties of Materials | 更新时间：2022-04-20

- Preparation of n-type β-Ga₂O₃ Film with High Thickness by MOCVD
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 4, Pages: 545-551(2022)
- 作者机构：
  
  吉林大学　电子科学与工程学院，集成光电子学国家重点联合实验室，吉林　长春　130012
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61774072)
- DOI：10.37188/CJL.20210398
  CLC： O482.31
- Received：18 December 2021，
  
  Revised：09 January 2022，
  
  Published：01 April 2022
- 稿件说明：
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Zheng-da LI, Teng JIAO, Xin DONG, et al. Preparation of n-type β-Ga₂O₃ Film with High Thickness by MOCVD[J]. Chinese journal of luminescence, 2022, 43(4): 545-551.
DOI：

Zheng-da LI, Teng JIAO, Xin DONG, et al. Preparation of n-type β-Ga₂O₃ Film with High Thickness by MOCVD[J]. Chinese journal of luminescence, 2022, 43(4): 545-551. DOI： 10.37188/CJL.20210398.

摘要

高厚度的Ga

薄膜能够提高器件的击穿电压，这种高厚度Ga

薄膜往往是通过HVPE法制备的。然而HVPE法存在着成本高、设备少等缺点。本文通过金属有机化学气相沉积(MOCVD)工艺，以SiH

为n型掺杂源，在Ga

衬底上生长了高厚度的n型β-Ga

薄膜，并且研究了SiH

流量对β-Ga

性质的影响。实验中制备的β-Ga

薄膜厚度达到4.15 μm。薄膜的晶体质量高，表面致密光滑且呈现台阶流生长模式。随着SiH

流量增加，晶体质量逐渐降低，电子浓度显著增加，电子迁移率降低。目前，高厚度β-Ga

薄膜的电子浓度可以在3.6×10

~ 5.3×10

-3

范围内调控；当薄膜电子浓度为3.6×10

-3

时，其电子迁移率可达137 cm

·V

-1

·s

-1

。本文论证了MOCVD工艺进行高厚度n型β-Ga

薄膜生长的可行性，这也为β-Ga

基垂直结构功率器件的制备提供了一种新途径。

Abstract

High-thickness Ga

film could increase the breakdown voltage of the device and it was generally prepared by HVPE. However

this method has some disadvantages such as the high cost and shortage of machines. In this paper

n-type β-Ga

film with high thickness was prepared by metal-organic chemical vapor deposition(MOCVD) process on the Ga

substrate with SiH

as the n-type doping source and the influence of SiH

flow on the properties of β-Ga

was studied. The thickness of the β-Ga

film prepared in the experiment reaches 4.15 μm. The crystal quality is high

and the surface of the film is dense and smooth and presents a step flow growth mode. As the flow of SiH

increases

both the crystal quality and the electron mobility gradually decreases

while the electron concentration increases significantly. At present

the electron concentration of the high-thickness β-Ga

film can be adjusted within the range of 3.6×10

- 5.3×10

-3

; when the film electron concentration is 3.6×10

-3

the electron mobility can reach 137 cm

·V

-1

·s

-1

. This article demonstrates the feasibility of growing high-thickness n-type β-Ga

films by MOCVD process

which also provides a new way for the preparation of β-Ga

-based vertical structure power devices.

关键词

Keywords

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Zheng-da LI

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Related Institution

State Key Laboratory on Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University

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State Key Laboratory of Wide-bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute

吉林大学电子科学与工程学院集成光电子学国家重点联合实验室

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⁰

Preparation of n-type β-Ga2O3 Film with High Thickness by MOCVD

DOI：10.37188/CJL.20210398

摘要

Abstract

关键词

Keywords

references

Preparation of n-type β-Ga₂O₃ Film with High Thickness by MOCVD