Chang LIU, Yao XIAO, Heng LIU, et al. Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser. [J]. Chinese Journal of Luminescence 43(3):388-395(2022)
DOI:
Chang LIU, Yao XIAO, Heng LIU, et al. Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser. [J]. Chinese Journal of Luminescence 43(3):388-395(2022) DOI: 10.37188/CJL.20210396.
Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser增强出版
the failure analysis of the self-developed 940 nm high-power triple junction vertical cavity surface emitting laser(VCSEL) single-emitter device after high temperature and high current aging failure is carried out. First
through the thermal resistance test
the junction temperature of the accelerated aging experiment was determined
and the aging acceleration factor was calculated to be 104. Subsequently
failure analysis was performed on the failed devices produced during the aging process. Through the
L-I-V
forward and reverse
V-I
optical and infrared appearance of the device before and after aging
near-field spot and transmission electron microscope(TEM)
the performance and light-emitting mode changes of the device before and after aging were studied
and the failure location of the failed device was determined and the cause of the failure was analyzed. The device was confirmed by TEM image. The failure is caused by the growth of dislocations in P-DBR. This article is the first report on the failure analysis of multi-junction VCSEL devices in the world. It has certain guiding significance for continuing to optimize the internal structure design of VCSEL and improving process control capabilities
and to improve the life and reliability of multi-junction VCSEL devices.
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