Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser

Chang LIU; Yao XIAO; Heng LIU; Guo-liang DENG; Pei MIAO; Jun WANG

doi:10.37188/CJL.20210396

您当前的位置：

首页 >

文章列表页 >

Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser

Device Fabrication and Physics | 更新时间：2022-04-07

- Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 3, Pages: 388-395(2022)
- 作者机构：
  
  1.四川大学　电子信息学院，四川　成都　610041
  2.苏州长光华芯光电技术股份有限公司，江苏　苏州　215163
- 作者简介：
- 基金信息：
- DOI：10.37188/CJL.20210396
  CLC： TN248.4
- Published：2022-03，
  
  Received：16 December 2021，
  
  Revised：12 January 2022，
扫描看全文
Chang LIU, Yao XIAO, Heng LIU, et al. Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser. [J]. Chinese Journal of Luminescence 43(3):388-395(2022)
DOI：

Chang LIU, Yao XIAO, Heng LIU, et al. Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser. [J]. Chinese Journal of Luminescence 43(3):388-395(2022) DOI： 10.37188/CJL.20210396.

摘要

对自主研发的940 nm大功率三结垂直腔面发射激光器(VCSEL)单点器件的高温高电流老化失效后的器件进行了失效分析研究。首先，通过热阻测试确定了加速老化实验的结温，并计算了老化加速因子为104。随后，对老化过程中产生的失效器件进行失效分析。通过老化前后器件

L-I-V

、正反向

V-I

、光学及红外外观、近场光斑及透射电子显微镜(TEM)研究了器件老化前后性能及发光模式变化，确定了器件的失效位置，分析了失效原因，并通过TEM图像确认了器件失效是由P-DBR中的位错生长导致。本文为国际首次对多结VCSEL器件失效分析的研究报道，对继续优化VCSEL内部结构设计及提升工艺控制能力、提高多结VCSEL器件寿命及可靠性具有一定指导意义。

Abstract

In this paper

the failure analysis of the self-developed 940 nm high-power triple junction vertical cavity surface emitting laser(VCSEL) single-emitter device after high temperature and high current aging failure is carried out. First

through the thermal resistance test

the junction temperature of the accelerated aging experiment was determined

and the aging acceleration factor was calculated to be 104. Subsequently

failure analysis was performed on the failed devices produced during the aging process. Through the

L-I-V

forward and reverse

V-I

optical and infrared appearance of the device before and after aging

near-field spot and transmission electron microscope(TEM)

the performance and light-emitting mode changes of the device before and after aging were studied

and the failure location of the failed device was determined and the cause of the failure was analyzed. The device was confirmed by TEM image. The failure is caused by the growth of dislocations in P-DBR. This article is the first report on the failure analysis of multi-junction VCSEL devices in the world. It has certain guiding significance for continuing to optimize the internal structure design of VCSEL and improving process control capabilities

and to improve the life and reliability of multi-junction VCSEL devices.

关键词

垂直腔面发射激光器多结失效分析可靠性

Keywords

vertical cavity surface emitting lasermulti-junctionfailure analysisreliability

references

LIU A J, WOLF P, LOTT J A, et al. Vertical-cavity surface-emitting lasers for data communication and sensing [J]. Photonics Res., 2019, 7(2):121-136.

BUENO J, ROBERTSON J, HEJDA M, et al. Experimental implementation of a photonic neural network with a 1 550 nm-VCSEL subject to optical injection and delayed optical feedback [C]. Proceedings of 2020 IEEE Photonics Conference (IPC),Vancouver, BC, Canada, 2020:1-2.

OKUR S, SCHELLER M, SEURIN J F, et al. High-power VCSEL arrays with customized beam divergence for 3D-sensing applications [C]. Proceedings of SPIE 10938,Vertical-cavity Surface-emitting Lasers ⅩⅩⅢ,San Francisco, 2019:109380F-1-7.

YUDIN V I, TAICHENACHEV A V, BASALAEV M Y, et al. Generalized autobalanced ramsey spectroscopy of clock transitions [J]. Phys. Rev. Appl., 2017, 9(5):054034.

张继业, 李雪, 张建伟, 等. 垂直腔面发射激光器研究进展 [J]. 发光学报, 2020, 41(12):1443-1459.

ZHANG J Y, LI X, ZHANG J W, et al. Research progress of vertical-cavity surface-emitting laser [J]. Chin. J. Lumin., 2020, 41(12):1443-1459. (in Chinese)

YU H C, ZHENG Z W, MEI Y, et al. Progress and prospects of GaN-based VCSEL from near UV to green emission [J]. Prog. Quant. Electron., 2018, 57:1-19.

霍玉晶, 陈千颂, 潘志文. 脉冲激光雷达的时间间隔测量综述 [J]. 激光与红外, 2001, 31(3):136-139.

HUO Y J, CHEN Q S, PAN Z W. Review on time-of-flight measurement of pulsed laser radar [J]. Laser Infrared, 2001, 31(3):136-139. (in Chinese)

VAN DER ZIEL J P, TSANG W T. Integrated multilayer GaAs lasers separated by tunnel junctions [J]. Appl. Phys. Lett., 1982, 41(6):499-501.

XIAO Y, TAN S Y, WANG J, et al. High efficiency and high power density VCSEL chip for 3D sensing [C]. Proceedings of SPIE 11704,Vertical-cavity Surface-emitting Lasers ⅩⅩⅤ,San Francisco, California, USA, 2021:1170407.

HERRICK R W. Reliability and degradation of vertical-cavity surface-emitting lasers [M]. UEDA O, PEARTON S J. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices. New York,NY: Springer, 2013: 147-205.

XIE S N, DE BRABANDER G, WIDJAJA W, et al. Reliability of oxide VCSELs in non-hermetic environments [C]. Proceedings of the 15th Annual Meeting of the IEEE Lasers and Electro-optics Society,Glasgow, UK, 2002:544-545.

SIN Y, LINGLEY Z, BRODIE M, et al. Failure mode analysis of degraded InGaAs-AlGaAs strained quantum well multi-mode vertical-cavity surface-emitting lasers [C]. Proceedings of SPIE 9766,Vertical-cavity Surface-emitting Lasers XX, San Francisco, 2016:97660F-1-12.

刘婧, 吕长志, 李志国, 等. 电子元器件加速寿命试验方法的比较 [J]. 半导体技术, 2006, 31(9):680-683.

LIU J, LV C Z, LI Z G, et al. Comparison of accelerated life tests of electronic component [J]. Semicond. Technol., 2006, 31(9):680-683. (in Chinese)

王德宏, 李雅静, 安振峰. 大功率半导体激光器步进加速老化研究 [J]. 微纳电子技术, 2008, 45(9):508-511.

WANG D H, LI Y J, AN Z F. Reliability of high power semiconductor laser diodes [J] Micronanoelectron. Technol., 2008, 45(9):508-511. (in Chinese)

PUSTERHOFER M, FABBRO R, COPPETA R A, et al. Electrical-stress driven oxidation in 940 nm oxide-confined VCSEL [J]. Semicond. Sci. Technol., 2021, 37(1):015010-1-9.

DAFINCA A, WEIDBERG A R, MCMAHON S J, et al. Reliability and degradation of oxide VCSELs due to reaction to atmospheric water vapor [J]. Proceedings of SPIE 8639, Vertical-cavity Surface-emitting Lasers ⅩⅦ, San Francisco, 2013:86390L-1-10.

HERRICK R W. Reliability of vertical-cavity surface-emitting lasers [J]. Jpn. J. Appl. Phys., 2012, 51(11S):11PC01-1-6.

SUN X, RICKARD W D A, IRONSIDE C N, et al. Targeted defect analysis in VCSEL oxide windows using 3D slice and view [J]. Semicond. Sci. Technol., 2021, 36(6):065015-1-6.

Views

262

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effect of Current-temperature Stress on The Reliability of GaN LED

Semi-inorganic Packaging Technology of DUV-LEDs with High-vapor Tightness

Status and Perspectives of Deep Ultraviolet LED Packaging Technology

Failure Mechanism Analysis of Reverse Leakage in GaN-based White LED

Related Author

Chang Liu

Yao Xiao

Heng Liu

Guo Liang Deng

Pei Miao

Jun Wang

ZOU Shui-ping

WU Bo-xi

Related Institution

Suzhou Everbright Photonics Co.， Ltd.

College of electronic information， Sichuan University

School of Mechanical and Automotive Engineering, South China University of Technology

Zhongshan Institute of Modern Industrial Technology, South China University of Technology

APt Electronics Co. Ltd.

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰