In this paper, the failure analysis of the self-developed 940 nm high-power triple junction vertical cavity surface emitting laser(VCSEL) single-emitter device after high temperature and high current aging failure is carried out. First, through the thermal resistance test, the junction temperature of the accelerated aging experiment was determined, and the aging acceleration factor was calculated to be 104. Subsequently, failure analysis was performed on the failed devices produced during the aging process. Through the ,L-I-V, forward and reverse ,V-I, optical and infrared appearance of the device before and after aging, near-field spot and transmission electron microscope(TEM), the performance and light-emitting mode changes of the device before and after aging were studied, and the failure location of the failed device was determined and the cause of the failure was analyzed. The device was confirmed by TEM image. The failure is caused by the growth of dislocations in P-DBR. This article is the first report on the failure analysis of multi-junction VCSEL devices in the world. It has certain guiding significance for continuing to optimize the internal structure design of VCSEL and improving process control capabilities, and to improve the life and reliability of multi-junction VCSEL devices.
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