无数据
1.Research Institute of Chongqing, Changchun University of Science and Technology, Chongqing 401135, China
2.State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
Published:2022-02,
Received:02 December 2021,
Revised:20 December 2021,
Scan for full text
Cite this article
Jia-bin WANG, Hai-zhu WANG, Wei-chao LIU, et al. Three-step Epitaxial Growth of GaAs on Si by MOCVD echnology. [J]. Chinese Journal of Luminescence 43(2):153-160(2022)
Jia-bin WANG, Hai-zhu WANG, Wei-chao LIU, et al. Three-step Epitaxial Growth of GaAs on Si by MOCVD echnology. [J]. Chinese Journal of Luminescence 43(2):153-160(2022) DOI: 10.37188/CJL.20210378.
0
Views
183
Downloads
0
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution