Three-step Epitaxial Growth of GaAs on Si by MOCVD echnology

Jia-bin WANG; Hai-zhu WANG; Wei-chao LIU; Qu-hui WANG; Jie FAN; Yong-gang ZOU; Xiao-hui MA

doi:10.37188/CJL.20210378

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Three-step Epitaxial Growth of GaAs on Si by MOCVD echnology

Cover Story | 更新时间：2022-02-25

- Three-step Epitaxial Growth of GaAs on Si by MOCVD echnology
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 2, Pages: 153-160(2022)
- 作者机构：
  
  1.长春理工大学　重庆研究院，重庆　401135
  2.长春理工大学　高功率半导体国家重点实验室，吉林　长春　130022
- 作者简介：
- 基金信息：
  
  Science and Technology Development Plan of Jilin Province(20210201089GX);Natural Science Foundation of Chongqing(cstc2021jcyj-msxmX1060)
- DOI：10.37188/CJL.20210378
  CLC： TN304.2
- Published：2022-02，
  
  Received：02 December 2021，
  
  Revised：20 December 2021，
- 稿件说明：
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JIA-BIN WANG, HAI-ZHU WANG, WEI-CHAO LIU, et al. Three-step Epitaxial Growth of GaAs on Si by MOCVD echnology. [J]. Chinese journal of luminescence, 2022, 43(2): 153-160.
DOI：

JIA-BIN WANG, HAI-ZHU WANG, WEI-CHAO LIU, et al. Three-step Epitaxial Growth of GaAs on Si by MOCVD echnology. [J]. Chinese journal of luminescence, 2022, 43(2): 153-160. DOI： 10.37188/CJL.20210378.

摘要

在硅(Si)上外延生长高质量的砷化镓(GaAs)薄膜是实现硅基光源单片集成的关键因素。但是，Si材料与GaAs材料之间较大的晶格失配、热失配等问题对获得高质量的GaAs薄膜造成了严重影响。本文利用金属有机化学气相沉积(MOCVD)技术开展Si基GaAs生长研究。通过采用三步生长法，运用低温成核层、高温GaAs层与循环热退火等结合的方式，进一步降低Si基GaAs材料的表面粗糙度和穿透位错密度。并利用X射线衍射(XRD)

-2

扫描追踪采用不同方法生长的样品中残余应力的变化。最终，在GaAs低温成核层生长时间62 min(生长厚度约25 nm)时，采用三步生长、循环热退火等结合的方式获得GaAs(004) XRD摇摆曲线峰值半高宽(FWHM)为401″、缺陷密度为6.8×10

-2

、5 μm×5 μm区域表面粗糙度为6.71 nm的GaAs外延材料，在材料中表现出张应力。

Abstract

Epitaxial growth of high-quality gallium arsenide(GaAs) films on silicon(Si) is the key factor to realize the monolithic integration of silicon-based light sources. However

the large lattice mismatch and thermal mismatch between Si and GaAs have a serious impact on the quality of GaAs films obtained by epitaxial growth. The growth of GaAs on Si was studied by metal-organic chemical vapor deposition(MOCVD). In this paper

the three-step growth method was used to further reduce the surface roughness and threading dislocation density of GaAs on Si by combining low temperature GaAs nucleation layer

high temperature GaAs layer and thermal cycle annealing. And the changes of residual stress in samples grown by different methods were tracked by X-ray diffraction(XRD)

-2

scan. Finally

when the growth time of GaAs low-temperature nucleation layer was 62 min (the growth thickness was about 25 nm)

the full width at half maximum(FWHM) of GaAs epitaxial material exhibiting tensile stress with GaAs(004) rocking curve measured by XRD was 401″

threading dislocation density was 6.8×10

-2

and surface roughness over 5 μm×5 μm scan areas of 6.71 nm was obtained by means of three-step growth and cyclic annealing.

关键词

金属有机化学气相沉积砷化镓硅异质外延

Keywords

metal-organic chemical vapor depositionGaAsSiheteroepitaxy

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Related Author

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Related Institution

State Key Laboratory of High Power Semiconductor Lasers， Changchun University of Science and Technology

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State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

吉林建筑大学电气与计算机学院吉林省建筑电气综合节能重点实验室

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