Tapered semiconductor lasers with high power and high brightness characteristics have been extensively used in many fields such as laser processing
free space communications
and medical
etc
. A simulation on 980 nm tapered semiconductor lasers has been done based on the wide-angle differential beam propagation method(WA-FD-BPM) in this work. The effects of structural parameters(such as ridge etching depth
taper angle
different ridge/taper length ratio
taper etching depth
front cavity reflectance) on the beam quality and
P-I-V
characteristics of the device are analyzed in detail. The analysis shows that the geometric loss of the tapered waveguide is the main factor leading to the decrease of the slope efficiency of the device
and the optical pumping effect is an important factor affecting the deterioration of the beam quality. The beam quality can be improved by reducing the reflectivity of the front cavity surface of the device. The results in this paper can provide a certain theoretical reference for the design and analysis of tapered lasers.
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