Synthesis and Conversion Efficiency Optimization of Quantum Dots Layer for Full-color Micro-LED Display

Zi-yuan LU; Wing-cheung CHONG; Xu ZHANG; Tao WANG; Yi TAN; Qian-jing WANG; Xiao-dong ZHANG; Yong CAI; Bao-shun ZHANG; Jing ZHANG

doi:10.37188/CJL.20210368

您当前的位置：

首页 >

文章列表页 >

Synthesis and Conversion Efficiency Optimization of Quantum Dots Layer for Full-color Micro-LED Display

Luminescence Industry and Technology Frontier | 更新时间：2022-04-07

- Synthesis and Conversion Efficiency Optimization of Quantum Dots Layer for Full-color Micro-LED Display
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 3, Pages: 421-429(2022)
- 作者机构：
  
  1.长春理工大学　光电工程学院，吉林　长春　130022
  2.中国科学院苏州纳米技术与纳米仿生研究所　纳米加工平台，江苏　苏州　215123
  3.中国科学技术大学　纳米技术与纳米仿生学院，安徽　合肥　230026
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(U1830112);Natural Science Foundation of Jiangsu Province(BK20191195)
- DOI：10.37188/CJL.20210368
  CLC： O482.31
- Received：25 November 2021，
  
  Revised：19 December 2021，
  
  Published：2022-03
- 稿件说明：
移动端阅览
Zi-yuan LU, Wing-cheung CHONG, Xu ZHANG, et al. Synthesis and Conversion Efficiency Optimization of Quantum Dots Layer for Full-color Micro-LED Display[J]. Chinese journal of luminescence, 2022, 43(3): 421-429.
DOI：

Zi-yuan LU, Wing-cheung CHONG, Xu ZHANG, et al. Synthesis and Conversion Efficiency Optimization of Quantum Dots Layer for Full-color Micro-LED Display[J]. Chinese journal of luminescence, 2022, 43(3): 421-429. DOI： 10.37188/CJL.20210368.

摘要

将表面配体改性的CdSe/ZnS量子点(Quantum dots)和光刻胶混合，进而采用光刻工艺在InGaN/GaN蓝光Micro-LED上实现了最小尺寸为3 μm的高分辨率、高光效的量子点颜色转换膜层。同时系统研究了不同厚度和混合比例的量子点膜层的吸收/发射光谱及光致发光量子产率(PLQY)。为优化光转换效率，量子点膜层中加入了TiO

散射粒子以提高蓝光的吸收效率。更进一步地，经过设计引入分布式布拉格反射镜(DBR)，使得未被吸收的蓝光光子回弹到量子点转换膜层，这不仅提升了蓝光吸收效率，也增强了转换色彩的饱和度。同时采用了热激发方式来提升量子点的光致发光量子产率。为得到更高的显示对比度和色彩饱和度，引入黑色光阻矩阵来削弱临近图形之间的颜色串扰。实验结果表明，该量子点膜层可以用光刻技术实现高分辨率、高光效的颜色转换图层，为单片全彩化Micro-LED显示的发展提供了新颖可靠的技术路线。

Abstract

In this paper

colloidal CdSe/ZnS quantum dots(QDs) with modified ligands are dispersed in photoresist and then patterned on blue InGaN/GaN Micro-LED by lithography process

demonstrating a high-resolution and highly efficient color conversion layer with critical dimension of 3 μm. The absorption/emission spectrum and photoluminescence quantum yield(PLQY) of the QDs color conversion layer(CCL) with different thickness and mixing ratio are systematically studied. To improve the conversion efficiency

TiO

scattering particles are diffused into the QDs CCL to enhance the blue light absorption. Moreover

a tailored distributed Bragg reflector(DBR) is introduced to make the unabsorbed blue photons bounce back to the QDs CCL

which not only amplifies the blue light absorption but also strengthens the saturation of the converted colors. The PLQY of the QDs CCL is even increased after appropriate hard baking. Black matrix material is applied to suppress the light crosstalk among neighboring pixels

thus higher contrast and color saturation are obtained. The promising experimental results prove that the QDs photoresist is feasible to construct a high-resolution and highly efficient color conversion layer by lithography process

paving a novel and reliable pathway to monolithic full-color Micro-LED displays.

关键词

Keywords

references

CHONG W C , CHO W K , LIU Z J , et al . 1700 pixels per inch (PPI) passive-matrix micro-LED display powered by ASIC [C]. 2014 IEEE Compound Semiconductor Integrated Circuit Symposium , La Jolla , 2014 : 1 - 4 .

HAN H V , LIN H Y , LIN C C , et al . Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology [J]. Opt. Express , 2015 , 23 ( 25 ): 32504 - 32515 .

WANG Z , SHAN X Y , CUI X G , et al . Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display [J]. J. Semicond. , 2020 , 41 ( 4 ): 041606-1-6 .

DAY J , LI J , LIE D Y C , et al . Ⅲ-nitride full-scale high-resolution microdisplays [J]. Appl. Phys. Lett. , 2011 , 99 ( 3 ): 031116-1-3 .

ZHANG X , QI L H , CHONG W C , et al . Active matrix monolithic micro-LED full-color micro-display [J]. J. Soc. Inf. Disp. , 2021 , 29 ( 1 ): 47 - 56 .

MAHLER B , SPINICELLI P , BUIL S , et al . Towards non-blinking colloidal quantum dots [J]. Nat. Mater. , 2008 , 7 ( 8 ): 659 - 664 .

RESCH-GENGER U , GRABOLLE M , CAVALIERE-JARICOT S , et al . Quantum dots versus organic dyes as fluorescent labels [J]. Nat. Methods , 2008 , 5 ( 9 ): 763 - 775 .

SHIMIZU K T , BÖHMER M , ESTRADA D , et al . Toward commercial realization of quantum dot based white light-emitting diodes for general illumination [J]. Photonics Res. , 2017 , 5 ( 2 ): A1 - A6 .

BASKOUTAS S , TERZIS A F . Size-dependent band gap of colloidal quantum dots [J]. J. Appl. Phys. , 2006 , 99 ( 1 ): 013708-1-4 .

MURRAY C B , NORRIS D J , BAWENDI M G . Synthesis and characterization of nearly monodisperse Cd E ( E =sulfur,selenium,tellurium) semiconductor nanocrystallites [J]. J. Am. Chem. Soc. , 1993 , 115 ( 19 ): 8706 - 8715 .

BAI X , YANG H C , ZHAO B X , et al . 4-4:flexible quantum dot color converter film for micro-LED applications [J]. SID Symp. Digest Tech. Papers , 2019 , 50 ( 1 ): 30 - 33 .

LIANG K L , KUO W H , SHEN H T , et al . Advances in color-converted micro-LED arrays [J]. Jpn. J. Appl. Phys. , 2021 , 60 ( SA ): SA0802-1-9 .

XIE B , HU R , LUO X B . Quantum dots-converted light-emitting diodes packaging for lighting and display:status and perspectives [J]. J. Electron. Packag. , 2016 , 138 ( 2 ): 020803-1-13 .

KIM H M , RYU M , CHA J H J , et al . 10 μm pixel,quantum-dots color conversion layer for high resolution and full color active matrix micro-LED display [C]. SID Symposium , Seminar , and Exhibition 2019, Display Week 2019 , San Jose , 2019 : 26 - 29 .

CHEN S W H , HUANG Y M , SINGH K J , et al . Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist [J]. Photonics Res. , 2020 , 8 ( 5 ): 630 - 636 .

LIN Y H , FENG Y , ZHANGHU M Y , et al . P-10.2:printable quantum-dots photopolymers as color-conversion layers for micro-LED displays [J]. SID Symp. Digest Tech. Papers , 2021 , 52 ( S2 ): 955 - 958 .

REISS P , PROTIÈRE M , LI L . Core/shell semiconductor nanocrystals [J]. Small , 2009 , 5 ( 2 ): 154 - 168 .

GAEENI M R , TOHIDIAN M , MAJLES-ARA M . Green synthesis of CdSe colloidal nanocrystals with strong green emission by the sol-gel method [J]. Ind. Eng. Chem. Res. , 2014 , 53 ( 18 ): 7598 - 7603 .

YIN Y M , HU Z P , ALI M U , et al . Full-color micro-LED display with CsPbBr 3 perovskite and CdSe quantum dots as color conversion layers [J]. Adv. Mater. Technol. , 2020 , 5 ( 8 ): 2000251 .

LEATHERDALE C A , WOO W K , MIKULEC F V , et al . On the absorption cross section of CdSe nanocrystal quantum dots [J]. J. Phys. Chem. B , 2002 , 106 ( 31 ): 7619 - 7622 .

LIM S J , ZAHID M U , LE P , et al . Brightness-equalized quantum dots [J]. Nat. Commun. , 2015 , 6 ( 1 ): 8210-1-10 .

WEI F , LI S , BAI X , et al . P-123:hybrid full color micro-LED displays with quantum dots [J]. SID Symp. Digest Tech. Papers , 2019 , 50 ( 1 ): 1709 - 1711 .

王颖 , 刘东 . 非球形粒子光散射计算、测量及其应用 [J]. 量子电子学报 , 2020 , 37 ( 5 ): 601 - 614 .

WANG Y , LIU D . Light scattering calculation and measurement of non-spherical particles and its application [J]. Chin. J. Quant. Electron. , 2020 , 37 ( 5 ): 601 - 614 . (in Chinese)

Views

1234

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Influence of Chip Size and Array Offset on Spatial Distribution of Light Intensity in PSS Micro-LEDs

Historical Evolution and Current Status of Key Materials and Technologies in Inkjet-printed Quantum Dot Electroluminescent Displays

Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs

Color Conversion Characteristics of Micro-LED Based on Quantum Dot@Ordered Mesoporous Composite Materials

Related Author

Zi-yuan LU

Wing-cheung CHONG

XU Zhang

TAO Wang

Yi TAN

Qian-jing WANG

Xiao-dong ZHANG

Yong CAI

Related Institution

University of Changchun University of Science and Technology

Key Laboratory of Multifunctional Nanomaterials and Smart Systems， Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences

School of Nano-Tech and Nano-Bionics， University of Science and Technology of China

Internation Digital Economy College， Minjiang University

Future Display Institute

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰