ZnO Luminescence Behavior Under Low Temperature by Ion-beam-induced Luminescence

Guo-qiang ZHAO; Jin-fu ZHANG; Guang-fu WANG; Meng-lin QIU; Ting-shun WANG; Qing-song HUA

doi:10.37188/CJL.20210339

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ZnO Luminescence Behavior Under Low Temperature by Ion-beam-induced Luminescence

Synthesis and Properties of Materials | 更新时间：2022-02-25

- ZnO Luminescence Behavior Under Low Temperature by Ion-beam-induced Luminescence
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 2, Pages: 226-237(2022)
- 作者机构：
  
  1.北京师范大学核科学与技术学院　射线束教育部重点实验室，北京　100875
  2.北京市辐射中心，北京　100875
- 作者简介：
- 基金信息：
  
  The Young Scientists Fund of The National Natural Science Foundation of China(11905010);The Fundamental Research Funds for the Central Universities(2018NTST04)
- DOI：10.37188/CJL.20210339
  CLC： O482.31
- Published：2022-02，
  
  Received：01 November 2021，
  
  Revised：19 November 2021，
- 稿件说明：
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GUO-QIANG ZHAO, JIN-FU ZHANG, GUANG-FU WANG, et al. ZnO Luminescence Behavior Under Low Temperature by Ion-beam-induced Luminescence. [J]. Chinese journal of luminescence, 2022, 43(2): 226-237.
DOI：

GUO-QIANG ZHAO, JIN-FU ZHANG, GUANG-FU WANG, et al. ZnO Luminescence Behavior Under Low Temperature by Ion-beam-induced Luminescence. [J]. Chinese journal of luminescence, 2022, 43(2): 226-237. DOI： 10.37188/CJL.20210339.

摘要

离子激发发光(Ions beam induced luminescence

IBIL)可以实时原位分析不同温度、不同离子辐照条件下材料内部点缺陷的演变行为。本文利用2 MeV H

研究了300

200

100 K温度下ZnO单晶内部点缺陷发光及其随注量的演变行为。实验中发现ZnO深能级发射和近带边发射，结合Voigt分峰与XPS实验结果，确定红光(1.75 eV)与V

Abstract

Ions beam induced luminescence(IBIL) can be used to analyze the evolution of defects under different temperatures and different ion irradiation conditions in real-time

in situ.

In this paper

the evolution of luminescence of point defects with fluence inside ZnO single crystals at 300

200

100 K was analyzed using 2 MeV H

. The deep-band emission and near-band emission of ZnO were observed in the experiments

and combined with the Voigt splitting results

it was determined that the origin of red emission(1.75 eV) was V

and the orange-red emission(1.95 eV) was associated with the transitions from the conduction band to O

. While for the green emission(2.10 eV) that redshifts with decreasing temperature

it was mainly related to V

. The reason of redshift was that more electrons from conduction band were released to Zn

. For the near-band emission

3.10 eV and 3.20 eV emission mainly associated with the transitions from Zn

to the valence band and recombination of excitons

and the redshifts were mainly due to the localization energy level of Zn

and the temperature-induced band-gap shrinkage. Using the single exponential formula to fit the decay of the luminescence intensity with fluence

the decay rate costant(

) was used to characterize the irradiation hardness of the defects. It was found that all three peaks of the deep-band emission were the maximum irradiation hardness at 200 K

while for the two peaks of the near-band emission

they had the maximum irradiation hardness at 300 K. This may be due to the fact that during the temperature increase

a large number of electron holes obtained enough thermal kinetic energy to be released from the originally bound by the point defect

coupled with the temperature-induced band-gap shrinkage

the dual effect made the radiation recombination inside the crystal enhanced

and thus the irradiation resistance was enhanced.

关键词

离子激发发光温度点缺陷ZnO

Keywords

ion-beam-induced luminescencetemperaturepoint defectsZnO

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