Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes

Liang GUO; Ya-nan GUO; Jian-kun YANG; Jian-chang YAN; Jun-xi WANG; Tong-bo WEI

doi:10.37188/CJL.20210331

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Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes

Cover Story | 更新时间：2022-01-14

- Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 1, Pages: 1-7(2022)
- 作者机构：
  
  1.中国科学院半导体研究所　半导体照明研发中心，北京　100083
  2.中国科学院大学　材料与光电研究中心，北京　100049
- 作者简介：
- 基金信息：
  
  National Key R&D Program of China(2017YFB0404104);National Natural Science Foundation of China(61974139);Beijing Natural Science Foundation(4182063)
- DOI：10.37188/CJL.20210331
  CLC： TN383⁺.1;TN929.12
- Published：2022-01，
  
  Received：25 October 2021，
  
  Revised：11 November 2021，
- 稿件说明：
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LIANG GUO, YA-NAN GUO, JIAN-KUN YANG, et al. Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes. [J]. Chinese journal of luminescence, 2022, 43(1): 1-7.
DOI：

LIANG GUO, YA-NAN GUO, JIAN-KUN YANG, et al. Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes. [J]. Chinese journal of luminescence, 2022, 43(1): 1-7. DOI： 10.37188/CJL.20210331.

摘要

AlGaN基深紫外LED由于具有高调制带宽和小芯片尺寸，在紫外光通信领域受到越来越多的关注。本研究通过改变生长AlGaN量子垒层的Al源流量，生长了三种具有不同量子垒高度的深紫外LED，研究了量子垒高度对深紫外LED光电特性和调制特性的影响。研究发现，随着量子垒高度的增加，深紫外LED的光功率出现先增加后减小的趋势，量子垒中Al组分为55%的深紫外LED的光功率相比50%和60%的深紫外LED提升了近一倍。载流子寿命则出现先减小后增大的趋势，且发光峰峰值波长逐渐蓝移。APSYS模拟表明，随着量子垒高度增加，量子垒对载流子的束缚能力增强，电子空穴波函数空间重叠增加，载流子浓度和辐射复合速率增加；但进一步增加量子垒高度又会由于电子泄露，空穴浓度降低，从而辐射复合速率降低。量子垒中Al组分为55%的深紫外LED的-3 dB带宽达到94.4 MHz，高于量子垒Al组分为50%和60%的深紫外LED。

Abstract

AlGaN-based deep ultraviolet LED has attracted more and more attention in ultraviolet communication due to its high modulation bandwidth and small chip size. In this study

AlGaN-based deep ultraviolet LEDs with varied Al composition of 50%

55%

60% in quantum barriers are fabricated. The effect of barrier height on the photoelectric and modulation characteristics of deep ultraviolet LEDs is studied. It is found that the optical power and external quantum efficiency (EQE) of the deep ultraviolet LED increase first and then decreased

and carrier lifetime decreases first and then increases as the quantum barrier height increases. The peak wavelength of the spectra shows a blue-shift. APSYS simulation revealed that the spacial overlap between the wave function of electron and hole is enhanced as Al composition increases. But further increase on barrier height will lead to current leakage which reduces the radiation recombination rate and carrier density in multi-quantum well layer. The -3 dB bandwidth of deep ultraviolet LED with 55% Al composition in quantum barrier is measured to be 94.4 MHz

higher than those with 50% and 60% Al composition in quantum barrier.

关键词

紫外光通信深紫外发光二极管多量子阱层调制带宽发光功率

Keywords

ultraviolet communicationdeep ultraviolet light-emitting diodesmultiple-quantum-well layermodulation bandwidthoptical power

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Related Institution

Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences

Research and Development Center for Semiconductor Lighting Technology， Institute of Semiconductors， Chinese Academy of Sciences

State Key Laboratory of Integrated Optoelectronics， Jilin University Region， College of Electronic Science and Engineering， Jilin University

Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology

Technology Development Centre, Shenzhen Research Institute of Guangdong Ocean University

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