Temperature Dependence and Evolution Mechanism of Aluminum Nitride Morphologies

Hui-dan NIU; Su-su KONG; Shao-yan YANG; Xiang-lin LIU; Hong-yuan WEI; Wei-zhen YAO; Hui-jie LI; Qing-qing CHEN; Lian-shan WANG; Zhan-guo WANG

doi:10.37188/CJL.20210287

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Temperature Dependence and Evolution Mechanism of Aluminum Nitride Morphologies

Synthesis and Properties of Materials | 更新时间：2021-11-23

- Temperature Dependence and Evolution Mechanism of Aluminum Nitride Morphologies
  增强出版
- 发光学报 Vol. 42, Issue 11, Pages: 1739-1747(2021)
- 作者机构：
  
  1.中国科学院半导体研究所半导体材料科学重点实验室, 北京 100083
  2.中国科学院大学材料与光电研究中心, 北京 100049
- 作者简介：
  
  [ "牛慧丹(1994-)，女，河北邢台人，博士研究生，2019年于中国科学院大学国家纳米科学中心获得硕士学位，主要从事基于宽禁带半导体材料的设备与制备的研究。E-mail: niuhuidan@semi.ac.cn" ]
  [ "杨少延(1973-)，男，黑龙江桦南县人，博士，研究员，博士研究生导师，2006年于中国科学院半导体研究所获得博士学位，主要从事宽禁带和超宽禁带半导体材料、器件及物理的研究。E-mail: sh-yyang@semi.ac.cn" ]
  [ "刘祥林(1965-)，男，湖南岳阳人，博士，副研究员，1999年于中国科学院半导体研究所获得博士学位。主要从事氮化镓材料、器件及物理的研究。E-mail: xlliu@semi.ac.cn" ]
- 基金信息：
  
  国家重点研发计划(2017YFB0404201);国家自然科学基金(61774147;61874108)
- DOI：10.37188/CJL.20210287
  CLC： O482.31
- Published：01 November 2021，
  
  Received：30 August 2021，
  
  Revised：10 September 2021，
扫描看全文
Hui-dan NIU, Su-su KONG, Shao-yan YANG, et al. Temperature Dependence and Evolution Mechanism of Aluminum Nitride Morphologies. [J]. 发光学报 42(11):1739-1747(2021)
DOI：

Hui-dan NIU, Su-su KONG, Shao-yan YANG, et al. Temperature Dependence and Evolution Mechanism of Aluminum Nitride Morphologies. [J]. 发光学报 42(11):1739-1747(2021) DOI： 10.37188/CJL.20210287.

摘要

氮化铝(AlN)是一种重要的超宽禁带半导体材料. 本文研究了采用氢化物气相外延(HVPE)方法生长氮化铝的表面形貌演化和生长机理. AlN的制备过程是氮化处理后以700~1 100 ℃的不同温度生长，得到四组不同温度下的表面形貌. 结果表明，生长温度对AlN的生长形貌和生长模式具有重要的影响. AlN的生长形貌体现在纳米尺度和微米尺度的形貌差异，该结果归因于受生长温度主导的Al原子的表面迁移能力和位错演化. 另外，在900 ℃生长温度下得到具有倒金字塔结构的V坑形貌. V坑面为{10-11}半极性面，并遵循三维(3D)生长模式. 这种具有半极性面微观形貌的AlN可作为模板进行半极性紫外LED器件结构或其他Ⅲ族氮化物外延生长，在光电子器件和电子器件研制方面具有广阔的应用前景.

Abstract

Aluminum nitride(AlN) is a significant ultra-wide bandgap semiconductor material. This paper studies the surface morphology evolution and growth mechanism of AlN grown on sapphire substrates by hydride vapor phase epitaxy(HVPE). The morphologies of AlN are controlled by the nitridation pre-treatment and the growth temperature from 750 ℃ to 1 100 ℃. The results show that growth temperature played a critical role in the AlN growth of morphology and growth mode. The difference in nanoscale or microscale morphologies of AlN is attributed to the surface migration of Al adatoms dominated by the growth temperature and the evolution of the dislocation. Moreover

the surface morphology evolution leads to an inverted pyramid morphology or large V-shaped pits at the growth temperature of 900 ℃. The grown V-shaped pits have {10-11} semi-polar facets and follow the three-dimensional(3D) growth mode. The semi-polar facets AlN structure could be used for realizing facet-controlled epitaxial of semi-polar UV-LED or other Ⅲ-nitride growth

which has prospects in optoelectronic and electronic devices.

关键词

超宽禁带半导体材料氮化铝氢化物气相外延生长温度表面形貌

Keywords

ultra-wide bandgap semiconductoraluminum nitridehydride vapor phase epitaxygrowth temperaturesurface morphology

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