Preparation and Electroluminescence Properties of CsPbI<sub>3</sub>/ZnO/GaN Nano-composite Structure

Xiao-yu ZHOU; Jing ZHANG; Feng-zhou ZHAO; Xin-bo CHU; Shun-li HE; Fu-wang ZHOU; Ru-yang YAN; Xiao-e XUE; Zhi-chao REN; Qi-ying ZHENG; Li-chun ZHANG

doi:10.37188/CJL.20210225

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Preparation and Electroluminescence Properties of CsPbI₃/ZnO/GaN Nano-composite Structure

Synthesis and Properties of Materials | 更新时间：2021-11-23

- Preparation and Electroluminescence Properties of CsPbI₃/ZnO/GaN Nano-composite Structure
  增强出版
- Chinese Journal of Luminescence Vol. 42, Issue 11, Pages: 1748-1755(2021)
- 作者机构：
  
  1.鲁东大学　物理与光电工程学院，山东　烟台　264025
  2.中国科学院　长春光学精密机械与物理研究所，吉林　长春　130033
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(62075092);Natural Science Foundation of Shangdong Province(ZR2019MA066);Yantai City-University Integration Development Project(2021XKZY03;2020XDRHXMP11)
- DOI：10.37188/CJL.20210225
  CLC：
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Xiao-yu ZHOU, Jing ZHANG, Feng-zhou ZHAO, et al. Preparation and Electroluminescence Properties of CsPbI₃/ZnO/GaN Nano-composite Structure. [J]. Chinese Journal of Luminescence 42(11):1748-1755(2021)
DOI：

Xiao-yu ZHOU, Jing ZHANG, Feng-zhou ZHAO, et al. Preparation and Electroluminescence Properties of CsPbI₃/ZnO/GaN Nano-composite Structure. [J]. Chinese Journal of Luminescence 42(11):1748-1755(2021) DOI： 10.37188/CJL.20210225.

摘要

采用高压脉冲激光沉积技术和溶液旋涂法在p-GaN衬底上先后制备了ZnO纳米线和CsPbI,3,纳米结构，通过X射线衍射、扫描电子显微镜和光致发光研究了样品的结构、形貌和光学性能。利用该结构制备的发光二极管在正向电压下表现出较强的宽波段可见光发射，电致发光光谱由440 nm的蓝光、500~650 nm的黄绿光和705 nm的红光组成。实验发现，随着注入电流的增大，器件的电致发光颜色从接近白光逐渐变蓝，并且随着CsPbI,3,旋涂转速的降低，器件的发光颜色也从蓝光逐渐变为黄光。最后，利用能带模型详细讨论了复合结构的电致发光机理，解释了器件发光光谱随注入电流和旋涂转速变化的原因。这种CsPbI,3,/ZnO纳米复合结构可以实现光谱色坐标从蓝光到白光的调节，为单芯片白光发射器件的制备提供了方案。

Abstract

Herein, ZnO nanowires and CsPbI,3, nanostructures were prepared on p-GaN substrates by high pressure pulsed laser deposition and solution spin coating, sequentially. The structure, morphology and optical properties were investigated by X-ray diffraction, scanning electron microscopy and photoluminescence. The light-emitting diode(LED) fabricated with the nano-composite structure exhibited strong visible wide band light emission under forward bias, the electroluminescence(EL) spectrum consists of a blue peak at 440 nm, the yellow-green emission band at 500-650 nm and a red peak at 705 nm. With the increase of the injection current, the EL color of the device changes from nearly white to blue gradually, and with the decrease of the spinning speed of CsPbI,3, the EL color of the device changes from blue light to yellow light gradually. At last, the EL mechanisms of heterojunction LEDs were discussed using the band diagram, and the reason why the emission spectrum of the device changes with the injection current and spin coating speed was explained. The CsPbI,3,/ZnO nano-composite can adjust the spectral color coordinates from blue to white, which provides a new way for single chip white LED.

关键词

ZnO纳米线CsPbI3电致发光白光LED

Keywords

ZnO nanowiresCsPbI3electroluminescencewhite light-emitting diode

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College of Physics and Optoelectronic Engineering，Ludong University

Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences

School of Physical Science and Engineering， Beijing Jiaotong University

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State Key Laboratory of Luminescent Materials and Devices， School of Materials Science and Engineering， South China University of Technology

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Preparation and Electroluminescence Properties of CsPbI3/ZnO/GaN Nano-composite Structure

DOI：10.37188/CJL.20210225

摘要

Abstract

关键词

Keywords

references

Preparation and Electroluminescence Properties of CsPbI₃/ZnO/GaN Nano-composite Structure