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Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er3+ Doping
Device Fabrication and Physics | 更新时间:2021-06-18
    • Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er3+ Doping

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    • Chinese Journal of Luminescence   Vol. 42, Issue 6, Pages: 863-870(2021)
    • DOI:10.37188/CJL.20210125    

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  • Wei LIU, Zhu-xin LI, Jun-jie WANG, et al. Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er3+ Doping. [J]. Chinese Journal of Luminescence 42(6):863-870(2021) DOI: 10.37188/CJL.20210125.

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