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Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er3+ Doping
Device Fabrication and Physics | 更新时间:2021-06-18
    • Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er3+ Doping

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    • Chinese Journal of Luminescence   Vol. 42, Issue 6, Pages: 863-870(2021)
    • DOI:10.37188/CJL.20210125    

      CLC: O482.31
    • Published:01 June 2021

      Received:18 April 2021

      Revised:26 April 2021

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  • Wei LIU, Zhu-xin LI, Jun-jie WANG, et al. Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er3+ Doping. [J]. Chinese Journal of Luminescence 42(6):863-870(2021) DOI: 10.37188/CJL.20210125.

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Related Author

Wei LIU
Zhuxin LI
Junjie WANG
Zengliang SHI
CHEN Yan-ling
LIN Jian-hua
FU Jie
CHEN Shu-yang

Related Institution

State Key Laboratory of Bioelectronics, School of biological science and medical engineering, Southeast University
Institute of Optoelectronic Materials and Devices, China Jiliang University
College of Physics and Electronic Information Engineering, Minjiang University
College of Materials and Chemical Engineering, Minjiang University
College of Physics and Energy, Fujiang Normal University
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