Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er<sup>3+</sup> Doping

Wei LIU; Zhu-xin LI; Jun-jie WANG; Zeng-liang SHI

doi:10.37188/CJL.20210125

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Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping

Device Fabrication and Physics | 更新时间：2021-06-18

- Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping
  增强出版
- Chinese Journal of Luminescence Vol. 42, Issue 6, Pages: 863-870(2021)
- 作者机构：
  
  1.东南大学生物科学与医学工程学院生物电子学国家重点实验, 江苏南京　 210096
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(11734005;61821002;62075041);National Key R&D Program of China(2018YFA0209101;2017YFA0700500)
- DOI：10.37188/CJL.20210125
  CLC：
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Wei LIU, Zhu-xin LI, Jun-jie WANG, et al. Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping. [J]. Chinese Journal of Luminescence 42(6):863-870(2021)
DOI：

Wei LIU, Zhu-xin LI, Jun-jie WANG, et al. Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping. [J]. Chinese Journal of Luminescence 42(6):863-870(2021) DOI： 10.37188/CJL.20210125.

摘要

采用水热法制备了Er,3+,掺杂的ZnO纳米棒阵列，通过场发射扫描电镜、X单晶衍射谱仪、透射电镜、微区显微光谱仪等对其形貌结构和发光性能进行了表征。结果表明，掺杂前后ZnO纳米棒的形貌及晶型结构未发生改变，Er,3+,被均匀地掺杂至ZnO纳米棒中，并未发现形成Er,2,O,3,;掺杂Er,3+,后样品的光致发光光谱显示400 nm左右蓝光部分占比先提高后减少，其可见光占比减少归因于Er,3+,填补了一部分锌空位缺陷，同时抑制了一部分氧空位缺陷。结合荧光寿命光谱分析也可发现其辐射发光部分寿命延长，表明荧光辐射效率提高。最终选取掺杂浓度为30%的单根ZnO纳米棒制备ZnO/GaN异质结发光二极管，与未掺杂Er,3+,的样品相比，其电致发光强度提高了5倍。本研究可为ZnO基电致发光器件的性能改善提供一种简便可行的方法。

Abstract

Er,3+, doped ZnO nanorod arrays were prepared by hydrothermal method, the morphology and luminescence properties were characterized by field emission scanning electron microscopy, X-ray single crystal diffraction, transmission electron microscopy and micro spectrometer. The experimental results show that Er,3+, is successfully and uniformly doped into ZnO nanorods, and the formation of Er,2,O,3, is not found. After Er,3+, doped, the photoluminescence spectrum shows a broad band peaked at 400 nm. With the increasing of Er,3+, concentration, the proportion of the blue part decreases, which indicates that Er,3+, fills part of the Zn vacancy defects and suppresses part of the O vacancy defects. At the same time, combined with the fluorescence lifetime spectrum, it can also be found that the lifetime of the radiative part is prolonged, which indicates that the fluorescence radiation efficiency is improved. Finally, ZnO nanorod contented Er,3+, with a mass concentration of 30% was selected to fabricate ZnO/GaN light-emitting diodes. Compared with the samples without Er,3+, the electroluminescence intensity of ZnO/GaN light-emitting diodes increased by five times. This paper provides a simple and feasible method to improve the performance of ZnO based electroluminescent devices.

关键词

ZnO纳米棒阵列Er3+掺杂缺陷调控电致发光器件

Keywords

ZnO nanorod arrayEr3+ dopingdefect controlelectroluminescence device

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State Key Laboratory of Bioelectronics， School of biological science and medical engineering， Southeast University

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Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er3+ Doping

DOI：10.37188/CJL.20210125

摘要

Abstract

关键词

Keywords

references

Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping