Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er<sup>3+</sup> Doping

Wei LIU; Zhu-xin LI; Jun-jie WANG; Zeng-liang SHI

doi:10.37188/CJL.20210125

您当前的位置：

首页 >

文章列表页 >

Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping

Device Fabrication and Physics | 更新时间：2021-06-18

- Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping
  增强出版
- Chinese Journal of Luminescence Vol. 42, Issue 6, Pages: 863-870(2021)
- 作者机构：
  
  东南大学生物科学与医学工程学院生物电子学国家重点实验, 江苏南京　 210096
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(11734005;61821002;62075041);National Key R&D Program of China(2018YFA0209101;2017YFA0700500)
- DOI：10.37188/CJL.20210125
  CLC： O482.31
- Published：01 June 2021，
  
  Received：18 April 2021，
  
  Revised：26 April 2021，
- 稿件说明：
移动端阅览
WEI LIU, ZHU-XIN LI, JUN-JIE WANG, et al. Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping. [J]. Chinese journal of luminescence, 2021, 42(6): 863-870.
DOI：

WEI LIU, ZHU-XIN LI, JUN-JIE WANG, et al. Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping. [J]. Chinese journal of luminescence, 2021, 42(6): 863-870. DOI： 10.37188/CJL.20210125.

摘要

采用水热法制备了Er

掺杂的ZnO纳米棒阵列，通过场发射扫描电镜、X单晶衍射谱仪、透射电镜、微区显微光谱仪等对其形貌结构和发光性能进行了表征。结果表明，掺杂前后ZnO纳米棒的形貌及晶型结构未发生改变，Er

被均匀地掺杂至ZnO纳米棒中，并未发现形成Er

;掺杂Er

后样品的光致发光光谱显示400 nm左右蓝光部分占比先提高后减少，其可见光占比减少归因于Er

填补了一部分锌空位缺陷，同时抑制了一部分氧空位缺陷。结合荧光寿命光谱分析也可发现其辐射发光部分寿命延长，表明荧光辐射效率提高。最终选取掺杂浓度为30%的单根ZnO纳米棒制备ZnO/GaN异质结发光二极管，与未掺杂Er

的样品相比，其电致发光强度提高了5倍。本研究可为ZnO基电致发光器件的性能改善提供一种简便可行的方法。

Abstract

doped ZnO nanorod arrays were prepared by hydrothermal method

the morphology and luminescence properties were characterized by field emission scanning electron microscopy

X-ray single crystal diffraction

transmission electron microscopy and micro spectrometer. The experimental results show that Er

is successfully and uniformly doped into ZnO nanorods

and the formation of Er

is not found. After Er

doped

the photoluminescence spectrum shows a broad band peaked at 400 nm. With the increasing of Er

concentration

the proportion of the blue part decreases

which indicates that Er

fills part of the Zn vacancy defects and suppresses part of the O vacancy defects. At the same time

combined with the fluorescence lifetime spectrum

it can also be found that the lifetime of the radiative part is prolonged

which indicates that the fluorescence radiation efficiency is improved. Finally

ZnO nanorod contented Er

with a mass concentration of 30% was selected to fabricate ZnO/GaN light-emitting diodes. Compared with the samples without Er

the electroluminescence intensity of ZnO/GaN light-emitting diodes increased by five times. This paper provides a simple and feasible method to improve the performance of ZnO based electroluminescent devices.

关键词

ZnO纳米棒阵列Er3+掺杂缺陷调控电致发光器件

Keywords

ZnO nanorod arrayEr3+ dopingdefect controlelectroluminescence device

references

JACOBS I E, MOULÉ A J. Controlling molecular doping in organic semiconductors [J].Adv. Mater., 2017, 29(42):1703063.

CHEN W, QI D C, GAO X Y, et al. Surface transfer doping of semiconductors [J].Prog. Surf. Sci., 2009, 84(9-10):279-321.

NORRIS D J, EFROS A L, ERWIN S C. Doped nanocrystals [J].Science, 2008, 319(5871):1776-1779.

WANG H, HO H P, XU J B. Photoelectron spectroscopic investigation of nitrogen chemical states in ZnO∶(N, Ga) thin films [J].J. Appl. Phys., 2008, 103(10):103704-1-6.

ALGARNI H, EL-GOMATI M M, AL-ASSIRI M S. Effect of gallium concentrations on the morphologies, structural and optical properties of Ga-doped ZnO nanostructures [J].J. Nanosci. Nanotechnol., 2014, 14(7):5317-5323.

SITTHICHAI S, PHURUANGRAT A, THONGTEM T, et al. Influence of Mg dopant on photocatalytic properties of Mg-doped ZnO nanoparticles prepared by sol-gel method [J].J. Ceram. Soc. Jpn., 2017, 125(3):122-124.

SA-NGUANPRANG S, PHURUANGRAT A, THONGTEM T, et al. Synthesis, analysis, and photocatalysis of Mg-doped ZnO nanoparticles [J].Russ. J. Inorg. Chem., 2019, 64(14):1841-1848.

YOU Q H, CAI H, HU Z G, et al. Blue shift in absorption edge and widening of band gap of ZnO by Al doping and Al-N co-doping [J].J. Alloys Compd., 2015, 644:528-533.

HUR T B, HWANG Y H, KIM H K. Impurity band characteristics near the band edge of Al-doped ZnO [J].J. Appl. Phys., 2004, 96(3):1507-1510.

ISHIKAWA Y, OKAMOTO M, TANAKA S, et al. Influence of annealing on the 1.5 μm light emission of Er-doped ZnO thin films and its crystal quality [J].J. Mater. Res., 2005, 20(9):2578-2582.

LO J W, LIEN W C, LIN C A, et al. Er-doped ZnO nanorod arrays with enhanced 1 540 nm emission by employing Ag island films and high-temperature annealing [J].ACS Appl. Mater. Interfaces, 2011, 3(4):1009-1014.

PAL U, MELÉNDREZ R, CHERNOV V, et al. Thermoluminescence properties of ZnO and ZnO∶Yb nanophosphors [J].Appl. Phys. Lett., 2006, 89(18):183118-1-3.

HENG C L, ZHAO C N, ZHANG L, et al. Effects of Yb doping on the structure and near band-edge emission of ZnO thin films on Si after high temperature annealing [J].J. Lumin., 2020, 222:117153.

PHURUANGRAT A, YAYAPAO O, THONGTEM T, et al. Preparation, characterization and photocatalytic properties of Ho doped ZnO nanostructures synthesized by sonochemical method [J].Superlattice. Microst., 2014, 67:118-126.

KABONGO G L, MBULE P S, MHLONGO G H, et al. Photoluminescence quenching and enhanced optical conductivity of P3HT-derived Ho3+-doped ZnO nanostructures [J].Nanoscale Res. Lett., 2016, 11(1):418-1-11.

CHADI D J. Doping in znse, znte, mgse, and mgte wide-band-gap semiconductors [J].Phys. Rev. Lett., 1994, 72(4):534-537.

ZHANG L C, ZHAO F Z, WANG F F, et al. Improvement in electroluminescence performance of n-ZnO/Ga2O3/p-GaN heterojunction light-emitting diodes [J].Chin. Phys. B, 2013, 22(12):128502-1-5.

ZHANG L C, LI Q S, SHANG L, et al. Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer [J].Opt. Express, 2013, 21(14):16578-16583.

XU C X, QIN F F, ZHU Q X, et al. Plasmon-enhanced ZnO whispering-gallery mode lasing [J].Nano Res., 2018, 11(6):3050-3064.

ABIYASA A P, YU S F, LAU S P, et al. Enhancement of ultraviolet lasing from Ag-coated highly disordered ZnO films by surface-plasmon resonance [J].Appl. Phys. Lett., 2007, 90(23):231106-1-3.

CHENG C W, SIE E J, LIU B, et al. Surface plasmon enhanced band edge luminescence of ZnO nanorods by capping Au nanoparticles [J].Appl. Phys. Lett., 2010, 96(7):071107-1-3.

PARK D, TAK Y, KIM J, et al. Low-temperature synthesized ZnO nanoneedles:XPS and PL analysis [J].Sur. Rev. Lett., 2007, 14(6):1061-1065.

ZSOLDOS Z, SARKANY A, GUCZI L. XPS evidence of alloying in Pd/ZnO catalysts [J].J. Catal., 1994, 145(1):235-238.

MO X M, LI Z X, LIU C F, et al. Improving and manipulating green-light electroluminescence in solution-processed ZnO nanocrystals via erbium doping [J].J. Lumin., 2019, 213:127-132.

YOU D T, XU C X, ZHAO J, et al. Single-crystal ZnO/AlN core/shell nanowires for ultraviolet emission and dual-color ultraviolet photodetection [J].Adv. Opt. Mater., 2019, 7(6):1801522-1-8.

YOU D T, XU C X, WANG X X, et al. A core@dual-shell nanorod array with a cascading band configuration for enhanced photocatalytic properties and anti-photocorrosion [J].J. Mater. Chem. A, 2020, 8(7):3726-3734.

YOU D T, XU C X, ZHANG W, et al. Photovoltaic-pyroelectric effect coupled broadband photodetector in self-powered ZnO/ZnTe core/shell nanorod arrays [J].Nano Energy, 2019, 62:310-318.

ZENG H B, DUAN G T, LI Y, et al. Blue luminescence of ZnO nanoparticles based on non-equilibrium processes:defect origins and emission controls [J].Adv. Funct. Mater., 2010, 20(4):561-572.

CHEN C, DUTTA M, STROSCIO M A. Confined and interface phonon modes in GaN/ZnO heterostructures [J].J. Appl. Phys., 2004, 95(5):2540-2546.

LIU S J, YU Q X, WANG J, et al. Photoluminescence of a ZnO/GaN heterostructure interface [J].Chin. Phys. Lett., 2009, 26(7):077805-1-4.

Views

113

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Spectroscopic Analysis and Mid-infrared Emission Enhancement in Er³⁺/Yb³⁺/Pr³⁺∶SrLaGaO₄ Crystal

Up-conversion Luminescence and Temperature Sensing Properties of La₂ATiO₆（A=Mg, Zn） Phosphor

Multi-photon Near-infrared Quantum Cutting Enhancement By Surface Plasmon of Ag Nanoparticles Under Multi-excitation

Synthesis Conditions and Luminescence Properties of Poly(phenylenevinylene)Derivatives

Related Author

Wei LIU

Zhuxin LI

Junjie WANG

Zengliang SHI

TU Chaoyang

LI Jianfu

ZHU Zhaojie

WANG Yan

Related Institution

State Key Laboratory of Bioelectronics， School of biological science and medical engineering， Southeast University

Key Laboratory of Optoelectronic Materials Chemistry and Physics， Fujian Institute of Research on the Structure of Matter， Chinese Academy of Sciences

University of Chinese Academy of Sciences

Institute of Optoelectronic Materials and Devices， China Jiliang University

College of Physics and Electronic Information Engineering， Minjiang University

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰

Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er3+ Doping

DOI：10.37188/CJL.20210125

摘要

Abstract

关键词

Keywords

references

Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping