马骁宇, 王俊, 刘素平, 等. 国内大功率半导体激光器研究及应用现状 [J].红外与激光工程, 2008, 37(2): 189-794.

MA X Y, WANG J, LIU S P, et al. Present situation of investigations and applications in high power semiconductor lasers [J].Infrared Laser Eng., 2008, 37(2): 189-794. (in Chinese)

王立军, 宁永强, 秦莉, 等. 大功率半导体激光器研究进展 [J].发光学报, 2015, 36(1): 1-19.

WANG L J, NING Y Q, QIN L, et al. Development of high power diode laser [J].Chin. J. Lumin., 2015, 36(1): 1-19. (in Chinese)

陈良惠, 杨国文, 刘育衔, 等. 半导体激光器研究进展 [J].中国激光, 2020, 47(5): 0500001-1-19.

CHEN L H, YANG G W, LIU Y X, et al. Development of semiconductor lasers [J].Chin. J. Lasers, 2020, 47(5): 0500001-1-19. (in Chinese)

GAO W, XU Z T, CHENG L S, et al. High-power highly reliable single emitter laser diodes at 808 nm [C].Proceedings of SPIE 6456, High-power Diode Laser Technology and Applications Ⅴ, San Jose, California, United States, 2007:64560B-1-5.

LI L, WAN C M, LI Z G, et al. High-efficiency AlGaAs/GaAs quantum well semiconductor laser [C].Proceedings of SPIE 6824, Semiconductor Lasers and Applications Ⅲ, Beijing, China, 2007:68241G.

BAO L, DEVITO M, GRIMSHAW M, et al. High performance diode lasers emitting at 780-820 nm [C].Proceedings of SPIE 8241, High-power Diode Laser Technology and Applications Ⅹ, San Francisco, California, United States, 2012:842109-1-13.

PIETRZAK A, HÜLSEWEDE R, ZORN M, et al. High-power single emitters and low fill factor bars emitting at 808 nm [C].Proceedings of SPIE 9733, High-power Diode Laser Technology and Applications ⅩⅣ, San Francisco, California, United States, 2016:97330R.

MORALES J, LEHKONEN S, LIU G, et al. Advances in 808 nm high power diode laser bars and single emitters [C].Proceedings of SPIE 9733, High-power Diode Laser Technology and Applications ⅩⅣ, San Francisco, California, United States, 2016:97330T.

李沛旭, 殷方军, 张成山, 等. 808 nm连续输出13.6 W单芯片大功率激光器 [J].中国激光, 2018, 45(1): 0101013-1-4.

LI P X, YIN F J, ZHANG C S, et al. 808 nm single emitter high power laser with 13.6 W [J].Chin. J. Lasers, 2018, 45(1): 0101013-1-4. (in Chinese)

朱洪波, 郝明明, 刘云, 等. 808 nm高亮度半导体激光器光纤耦合器件 [J].光学 精密工程, 2012, 20(8): 1684-1690.

ZHU H B, HAO M M, LIU Y, et al. 808 nm high brightness module of fiber coupled diode laser [J].Opt. Precision Eng., 2012, 20(8): 1684-1690. (in Chinese)

GAPONTSEV V, MOSHEGOV N, BEREZIN I, et al. Highly-efficient high-power pumps for fiber lasers [C].Proceedings of SPIE10086, High-power Diode Laser Technology ⅩⅤ, San Francisco, California, United States, 2017:1008604-1-10.

朱洪波, 刘云, 郝明明, 等. 高效率半导体激光器光纤耦合模块 [J].发光学报, 2011, 32(11): 1147-1151.

ZHU H B, LIU Y, HAO M M, et al. High efficiency module of fiber coupled diode laser [J].Chin. J. Lumin., 2011, 32(11): 1147-1151. (in Chinese)

宋云菲, 王贞福, 李特, 等. 808 nm半导体激光芯片电光转换效率的温度特性机理研究 [J].物理学报, 2017, 66(10): 104202-1-6.

SONG Y F, WANG Z F, LI T, et al. Efficiency analysis of 808 nm laser diode array under different operating temperatures [J].Acta Phys. Sinica, 2017, 66(10): 104202-1-6. (in Chinese)

CRUMP P, WENZEL H, ERBERT G, et al. Progress in increasing the maximum achievable output power of broad area diode lasers [C].Proceedings of SPIE 8241, High-power Diode Laser Technology and Applications Ⅹ, San Francisco, California, United States, 2012:82410U.

HASLER K H, WENZEL H, CRUMP P, et al. Comparative theoretical and experimental studies of two designs of high-power diode lasers [J].Semicond. Sci. Technol., 2014, 39(4): 045010-1-6.

仲莉, 王俊, 冯小明, 等. 808 nm大功率无铝有源区非对称波导结构激光器 [J].中国激光, 2007, 34(8): 1037-1042.

ZHONG L, WANG J, FENG X M, et al. 808 nm high-power lasers with Al-free active region with asymmetric waveguide structure [J].Chin. J. Lasers, 2007, 34(8): 1037-1042. (in Chinese)

CRUMP P, ERBERT G, WENZEL H, et al. Efficient high-power laser diodes [J].IEEE J. Sel. Top. Quant. Electron., 2013, 19(4): 1501211-1-11.

FREVERT C, CRUMP P, BUGGE F, et al. The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300 K [J].Semicond. Sci. Technol., 2016, 31(2): 025003-1-12.

PIKHTIN N A, SLIPCHENKO S O, SOKOLOVA Z N, et al. Internal optical loss in semiconductor lasers [J].Semiconductors, 2004, 38(3): 360-367.

KANSKAR M, EARLES T, GOODNOUGH T, et al. High-power conversion efficiency Al-free diode lasers for pumping high-power solid-state laser systems [C].Proceedings of SPIE 5738, Novel In-plane Semiconductor Lasers Ⅳ, 2005:573847-1-10.

LISCHKA H, CLEMENS P, HENSCHEL H, et al. Radiation effects in optoelectronic devices [C].Proceedings of SPIE 2425, Optical Fibre Sensing and Systems in Nuclear Environments, Mol, Belgium, 1994:43-52.