Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes

Yi-dong CHANG; Zhen-fu WANG; Xiao-Ying ZHANG; Guo-wen YANG; Te LI; Yu-qi DU; Yu-liang ZHAO; Yu-xian LIU; Yu LAN

doi:10.37188/CJL.20210108

您当前的位置：

首页 >

文章列表页 >

Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes

Device Fabrication and Physics | 更新时间：2021-07-22

- Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes
  增强出版
- Chinese Journal of Luminescence Vol. 42, Issue 7, Pages: 1040-1048(2021)
- 作者机构：
  
  1.中国科学院大学，北京　 100049
  2.中国科学院西安光学精密机械研究所　瞬态光学与光子技术国家重点实验室，陕西　西安　 710119
  3.陕西省计量科学研究院，陕西　西安　 710100
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61504167);the Natural Science Foundation of Shaanxi Province,China(2019ZY-CXPT-03-05;2018JM6010;2015JQ6263);the Talent Project of Science and Technology Department of Shaanxi Province(2017KJXX-72)
- DOI：10.37188/CJL.20210108
  CLC： TN248.4
- Received：24 March 2021，
  
  Revised：08 April 2021，
  
  Published：01 July 2021
- 稿件说明：
移动端阅览
Yi-dong CHANG, Zhen-fu WANG, Xiao-Ying ZHANG, et al. Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes[J]. Chinese journal of luminescence, 2021, 42(7): 1040-1048.
DOI：

Yi-dong CHANG, Zhen-fu WANG, Xiao-Ying ZHANG, et al. Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes[J]. Chinese journal of luminescence, 2021, 42(7): 1040-1048. DOI： 10.37188/CJL.20210108.

摘要

对808 nm的InAlGaAs/AlGaAs半导体激光器芯片的波导厚度进行了优化，研究发现N波导与P波导厚度比值为1.8时芯片电光转换效率最高。基于上述高效率芯片研制出Chip-on-submount(COS)单管和光纤芯径62.5 μm、数值孔径0.22的光纤耦合模块，并研究了两种器件在-10~90 ℃范围内的效率特性。结果显示，温度由-10 ℃升高到90 ℃

COS单管的载流子泄漏占比由1.18%增加到16.67%，光纤耦合模块的载流子泄漏占比由1.99%增加到17.73%，表明温升引起的载流子泄漏加剧是导致电光转换效率降低的主要因素。此外，还研究了高温老炼、热真空、空间辐照对光纤耦合模块电光转换效率的影响，并揭示了导致器件电光转换效率降低的内在因素。

Abstract

The waveguide thickness of 808 nm InAlGaAs/AlGaAs laser diode chip was optimized in this paper. The study found that when the thickness ratio of the N-waveguide to the P-waveguide was 1.8

the chip had the highest power conversion efficiency. Chip-on-submount(COS) packaged single emitters and fiber-coupled modules@core diameter 62.5 μm

numerical aperture(NA) 0.22 were presented based on this conclusion

and the efficiency characteristic of the devices in the range of -10-90 ℃ was analyzed. The results showed that when the temperature increased from -10 to 90 ℃

the carrier leakage ratio of COS single emitter increased from 1.18% to 16.67%

and the carrier leakage ratio of fiber-coupled module increased from 1.99% to 17.73%

indicating that the increase of carrier leakage caused by temperature rise was the main factor leading to the decrease of power conversion efficiency. Moreover

the effects of high-temperature aging

thermal vacuum conditions and space radiation on the power conversion efficiency of fiber-coupled module were studied and the internal factors that lead to the reduction of the device's power conversion efficiency were revealed.

关键词

Keywords

references

马骁宇 , 王俊 , 刘素平 , 等 . 国内大功率半导体激光器研究及应用现状 [J]. 红外与激光工程 , 2008 , 37 ( 2 ): 189 - 794 .

MA X Y , WANG J , LIU S P , et al . Present situation of investigations and applications in high power semiconductor lasers [J]. Infrared Laser Eng. , 2008 , 37 ( 2 ): 189 - 794 . (in Chinese)

王立军 , 宁永强 , 秦莉 , 等 . 大功率半导体激光器研究进展 [J]. 发光学报 , 2015 , 36 ( 1 ): 1 - 19 .

WANG L J , NING Y Q , QIN L , et al . Development of high power diode laser [J]. Chin. J. Lumin. , 2015 , 36 ( 1 ): 1 - 19 . (in Chinese)

陈良惠 , 杨国文 , 刘育衔 , 等 . 半导体激光器研究进展 [J]. 中国激光 , 2020 , 47 ( 5 ): 0500001-1-19 .

CHEN L H , YANG G W , LIU Y X , et al . Development of semiconductor lasers [J]. Chin. J. Lasers , 2020 , 47 ( 5 ): 0500001-1-19 . (in Chinese)

GAO W , XU Z T , CHENG L S , et al . High-power highly reliable single emitter laser diodes at 808 nm [C]. Proceedings of SPIE 6456, High-power Diode Laser Technology and Applications Ⅴ , San Jose, California, United States , 2007 : 64560B-1-5 .

LI L , WAN C M , LI Z G , et al . High-efficiency AlGaAs/GaAs quantum well semiconductor laser [C]. Proceedings of SPIE 6824, Semiconductor Lasers and Applications Ⅲ , Beijing, China , 2007 : 68241G .

BAO L , DEVITO M , GRIMSHAW M , et al . High performance diode lasers emitting at 780-820 nm [C]. Proceedings of SPIE 8241, High-power Diode Laser Technology and Applications Ⅹ , San Francisco, California, United States , 2012 : 842109-1-13 .

PIETRZAK A , HÜLSEWEDE R , ZORN M , et al . High-power single emitters and low fill factor bars emitting at 808 nm [C]. Proceedings of SPIE 9733, High-power Diode Laser Technology and Applications ⅩⅣ , San Francisco, California, United States , 2016 : 97330R .

MORALES J , LEHKONEN S , LIU G , et al . Advances in 808 nm high power diode laser bars and single emitters [C]. Proceedings of SPIE 9733, High-power Diode Laser Technology and Applications ⅩⅣ , San Francisco, California, United States , 2016 : 97330T .

李沛旭 , 殷方军 , 张成山 , 等 . 808 nm连续输出13.6 W单芯片大功率激光器 [J]. 中国激光 , 2018 , 45 ( 1 ): 0101013-1-4 .

LI P X , YIN F J , ZHANG C S , et al . 808 nm single emitter high power laser with 13.6 W [J]. Chin. J. Lasers , 2018 , 45 ( 1 ): 0101013-1-4 . (in Chinese)

朱洪波 , 郝明明 , 刘云 , 等 . 808 nm高亮度半导体激光器光纤耦合器件 [J]. 光学精密工程 , 2012 , 20 ( 8 ): 1684 - 1690 .

ZHU H B , HAO M M , LIU Y , et al . 808 nm high brightness module of fiber coupled diode laser [J]. Opt. Precision Eng. , 2012 , 20 ( 8 ): 1684 - 1690 . (in Chinese)

GAPONTSEV V , MOSHEGOV N , BEREZIN I , et al . Highly-efficient high-power pumps for fiber lasers [C]. Proceedings of SPIE10086, High-power Diode Laser Technology ⅩⅤ , San Francisco, California, United States , 2017 : 1008604-1-10 .

朱洪波 , 刘云 , 郝明明 , 等 . 高效率半导体激光器光纤耦合模块 [J]. 发光学报 , 2011 , 32 ( 11 ): 1147 - 1151 .

ZHU H B , LIU Y , HAO M M , et al . High efficiency module of fiber coupled diode laser [J]. Chin. J. Lumin. , 2011 , 32 ( 11 ): 1147 - 1151 . (in Chinese)

宋云菲 , 王贞福 , 李特 , 等 . 808 nm半导体激光芯片电光转换效率的温度特性机理研究 [J]. 物理学报 , 2017 , 66 ( 10 ): 104202-1-6 .

SONG Y F , WANG Z F , LI T , et al . Efficiency analysis of 808 nm laser diode array under different operating temperatures [J]. Acta Phys. Sinica , 2017 , 66 ( 10 ): 104202-1-6 . (in Chinese)

CRUMP P , WENZEL H , ERBERT G , et al . Progress in increasing the maximum achievable output power of broad area diode lasers [C]. Proceedings of SPIE 8241, High-power Diode Laser Technology and Applications Ⅹ , San Francisco, California, United States , 2012 : 82410U .

HASLER K H , WENZEL H , CRUMP P , et al . Comparative theoretical and experimental studies of two designs of high-power diode lasers [J]. Semicond. Sci. Technol. , 2014 , 39 ( 4 ): 045010-1-6 .

仲莉 , 王俊 , 冯小明 , 等 . 808 nm大功率无铝有源区非对称波导结构激光器 [J]. 中国激光 , 2007 , 34 ( 8 ): 1037 - 1042 .

ZHONG L , WANG J , FENG X M , et al . 808 nm high-power lasers with Al-free active region with asymmetric waveguide structure [J]. Chin. J. Lasers , 2007 , 34 ( 8 ): 1037 - 1042 . (in Chinese)

CRUMP P , ERBERT G , WENZEL H , et al . Efficient high-power laser diodes [J]. IEEE J. Sel. Top. Quant. Electron. , 2013 , 19 ( 4 ): 1501211-1-11 .

FREVERT C , CRUMP P , BUGGE F , et al . The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300 K [J]. Semicond. Sci. Technol. , 2016 , 31 ( 2 ): 025003-1-12 .

PIKHTIN N A , SLIPCHENKO S O , SOKOLOVA Z N , et al . Internal optical loss in semiconductor lasers [J]. Semiconductors , 2004 , 38 ( 3 ): 360 - 367 .

KANSKAR M , EARLES T , GOODNOUGH T , et al . High-power conversion efficiency Al-free diode lasers for pumping high-power solid-state laser systems [C]. Proceedings of SPIE 5738, Novel In-plane Semiconductor Lasers Ⅳ , 2005 : 573847-1-10 .

LISCHKA H , CLEMENS P , HENSCHEL H , et al . Radiation effects in optoelectronic devices [C]. Proceedings of SPIE 2425, Optical Fibre Sensing and Systems in Nuclear Environments , Mol, Belgium , 1994 : 43 - 52 .

Views

247

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

Zhen-Fu WANG

Guo-Wen YANG

Te LI

Yu-qi DU

Yu-Liang ZHAO

Yu-Xian LIU

Yu LAN

Yi-dong CHANG

Related Institution

State Key Laboratory of Transient Optics and Photonics， Xi’an Institute of Optics and Precision Mechanics， Chinese Academy of Sciences

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰