Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes

Yi-dong CHANG; Zhen-fu WANG; Xiao-Ying ZHANG; Guo-wen YANG; Te LI; Yu-qi DU; Yu-liang ZHAO; Yu-xian LIU; Yu LAN

doi:10.37188/CJL.20210108

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Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes

Device Fabrication and Physics | 更新时间：2021-07-22

- Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes
  增强出版
- Chinese Journal of Luminescence Vol. 42, Issue 7, Pages: 1040-1048(2021)
- 作者机构：
  
  1.中国科学院大学，北京　 100049
  2.中国科学院西安光学精密机械研究所　瞬态光学与光子技术国家重点实验室，陕西　西安　 710119
  3.陕西省计量科学研究院，陕西　西安　 710100
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61504167);the Natural Science Foundation of Shaanxi Province,China(2019ZY-CXPT-03-05;2018JM6010;2015JQ6263);the Talent Project of Science and Technology Department of Shaanxi Province(2017KJXX-72)
- DOI：10.37188/CJL.20210108
  CLC： TN248.4
- Received：24 March 2021，
  
  Revised：2021-04-08，
  
  Published：01 July 2021
- 稿件说明：
移动端阅览
Yi-dong CHANG, Zhen-fu WANG, Xiao-Ying ZHANG, et al. Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes[J]. Chinese Journal of Luminescence, 2021, 42(7): 1040-1048.
DOI：

Yi-dong CHANG, Zhen-fu WANG, Xiao-Ying ZHANG, et al. Waveguide Optimization and Efficiency Characteristic Analysis of 808 nm Laser Diodes[J]. Chinese Journal of Luminescence, 2021, 42(7): 1040-1048. DOI： 10.37188/CJL.20210108.

摘要

对808 nm的InAlGaAs/AlGaAs半导体激光器芯片的波导厚度进行了优化，研究发现N波导与P波导厚度比值为1.8时芯片电光转换效率最高。基于上述高效率芯片研制出Chip-on-submount(COS)单管和光纤芯径62.5 μm、数值孔径0.22的光纤耦合模块，并研究了两种器件在-10~90 ℃范围内的效率特性。结果显示，温度由-10 ℃升高到90 ℃

COS单管的载流子泄漏占比由1.18%增加到16.67%，光纤耦合模块的载流子泄漏占比由1.99%增加到17.73%，表明温升引起的载流子泄漏加剧是导致电光转换效率降低的主要因素。此外，还研究了高温老炼、热真空、空间辐照对光纤耦合模块电光转换效率的影响，并揭示了导致器件电光转换效率降低的内在因素。

Abstract

The waveguide thickness of 808 nm InAlGaAs/AlGaAs laser diode chip was optimized in this paper. The study found that when the thickness ratio of the N-waveguide to the P-waveguide was 1.8

the chip had the highest power conversion efficiency. Chip-on-submount(COS) packaged single emitters and fiber-coupled modules@core diameter 62.5 μm

numerical aperture(NA) 0.22 were presented based on this conclusion

and the efficiency characteristic of the devices in the range of -10-90 ℃ was analyzed. The results showed that when the temperature increased from -10 to 90 ℃

the carrier leakage ratio of COS single emitter increased from 1.18% to 16.67%

and the carrier leakage ratio of fiber-coupled module increased from 1.99% to 17.73%

indicating that the increase of carrier leakage caused by temperature rise was the main factor leading to the decrease of power conversion efficiency. Moreover

the effects of high-temperature aging

thermal vacuum conditions and space radiation on the power conversion efficiency of fiber-coupled module were studied and the internal factors that lead to the reduction of the device's power conversion efficiency were revealed.

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references

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Zhen-Fu WANG

Guo-Wen YANG

Te LI

Yu-qi DU

Yu-Liang ZHAO

Yu-Xian LIU

Yu LAN

Yi-dong CHANG

Related Institution

State Key Laboratory of Transient Optics and Photonics， Xi’an Institute of Optics and Precision Mechanics， Chinese Academy of Sciences

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