Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs

Wei-dong WANG; Chun-shuang CHU; Dan-yang ZHANG; Wen-gang BI; Yong-hui ZHANG; Zi-hui ZHANG

doi:10.37188/CJL.20210102

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Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs

Cover Story | 更新时间：2021-07-22

- Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs
  增强出版
- 发光学报 Vol. 42, Issue 7, Pages: 897-903(2021)
- 作者机构：
  
  1.河北工业大学电子信息工程学院　天津市电子材料与器件重点实验室，天津　 300401
  2.河北工业大学　省部共建电工装备可靠性与智能化国家重点实验室，天津　 300401
- 作者简介：
  
  [ "王玮东(1995-)，男，山西朔州人，硕士研究生，2018年于沈阳工业大学获得学士学位，主要从事基于第三代半导体材料的发光二极管的设计与制备。E-mail: wangweidong2019@hotmail.com" ]
  [ "楚春双(1993-)，女，河北邢台人，博士，2021年于河北工业大学获得博士学位，主要从事第三代半导体器件的设计与制备(包括电力电子器件、光电探测器和深紫外发光器件)。E-mail:chuchunshuang@hotmail.com" ]
  [ "张勇辉(1983-)，男，江西抚州人，博士，副教授，博士研究生导师，2015年于中国科学院半导体研究所获得博士学位，主要从事基于纳米制造技术的氮化镓微纳结构LED的相关研究。E-mail:zhangyh@hebut.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(62074050;61975051);河北工业大学省部共建电工装备可靠性与智能化国家重点实验室研究项目(EERI_PI2020008);东旭集团与河北工业大学联合研究项目(HI1909)
- DOI：10.37188/CJL.20210102
  CLC： TN312.8
- Published：01 July 2021，
  
  Received：20 March 2021，
  
  Revised：01 April 2021，
扫描看全文
Wei-dong WANG, Chun-shuang CHU, Dan-yang ZHANG, et al. Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs. [J]. 发光学报 42(7):897-903(2021)
DOI：

Wei-dong WANG, Chun-shuang CHU, Dan-yang ZHANG, et al. Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs. [J]. 发光学报 42(7):897-903(2021) DOI： 10.37188/CJL.20210102.

摘要

研究了俄歇复合、电子泄漏和空穴注入对深紫外发光二极管(DUV LED)效率衰退的影响. 结果表明，当俄歇复合系数从10

-32

·s

-1

增大到10

-30

·s

-1

时，俄歇复合对效率衰退的影响很小. 当俄歇复合系数增大到10

-29

·s

-1

时，俄歇复合对效率衰退有显著的影响. 然而，对于AlGaN材料而言，俄歇复合系数很难达到10

-29

·s

-1

. 此外，本研究还发现，即使设置的俄歇复合系数等于10

-32

·s

-1

DUV LED的效率衰退依旧随着电子泄漏的增加而增大. 因此，这进一步证明了电子泄漏是导致DUV LED效率衰退的主要因素. 此外，本工作还证明了空穴注入效率的提高可以有效地抑制DUV LED的效率衰退问题，这主要是由于更多的电子与空穴在量子阱中复合产生了光子，降低了电子从有源区中泄漏的几率.

Abstract

We reveal the impact of the Auger recombination

electron leakage and hole injection on the efficiency droop for deep-ultraviolet light-emitting diodes(DUV LEDs). According to our results

the minor change of the efficiency droop is caused by the Auger recombination when the Auger recombination coefficients range from 10

-32

·s

-1

to 10

-30

·s

-1

. The Auger recombination induces notable role on the efficiency droop by defining the Auger recombination coefficient of 10

-29

·s

-1

. However

the large Auger recombination coefficient is not realistic for AlGaN materials. Besides

we find that the efficiency droop becomes significant with the increased electron leakage

even when the adopted Auger recombination coefficient is as small as 10

-32

·s

-1

. Thus

we can prove electron leakage is a major factor causing the severe efficiency droop for DUV LEDs. We then prove that increasing hole injection can suppress efficiency droop because more electrons can recombine with holes instead of escaping from multiple quantum wells(MQWs).

关键词

深紫外发光二极管俄歇复合电子泄漏空穴注入效率衰退

Keywords

DUV LEDAuger recombinationelectron leakagehole injectionefficiency droop

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Related Author

Weidong WANG

Chunshuang CHU

Danyang ZHANG

Wengang BI

Yonghui ZHANG

Zi-Hui ZHANG

Related Institution

Key Laboratory of Electronic Materials and Devices of Tianjin， School of Electronics and Information Engineering， Hebei University of Technology

State Key Laboratory of Reliability and Intelligence of Electrical Equipment， Hebei University of Technology

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